RF MOSFETs Transistors – Cybertant Technology

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945MHz (2)

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Id - Continuous Drain Current
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JESD-30 Code
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VRF2933 (1)
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165u00b0C (1)

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+ 150 C (5)
Mfr
onsemi (1)

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65V (2)

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Min Operating Temperature
-65u00b0C (10)

-55u00b0C (3)
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- 65 C (5)
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3 (168 Hours) (4)

1 (Unlimited) (9)
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1 (11)
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ENHANCEMENT MODE (8)
Operating Temperature Range
- 65 C to + 150 C (4)
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200 u00b0C (1)
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150 W (2)

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TO-243AA (3)

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TO-236-3, SC-59, SOT-23-3 (3)

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Package Description
0.630 INCH, ROHS COMPLIANT, M177, SOE, 4 PIN (1)
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yes (3)
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300 W (2)

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Peak Reflow Temperature (Cel)
250 (1)

260 (2)

NOT SPECIFIED (4)
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3 (6)
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Product Category
RF MOSFET Transistors (1)
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Active (7)
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RF MOSFET Transistors (1)
Published
2006 (2)

2009 (1)
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Not Qualified (5)
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No (6)
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not_compliant (2)

compliant (1)
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No SVHC (3)
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NOT SPECIFIED (1)
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Details (5)
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ROHS3 Compliant (13)
Series
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* (1)
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MOSFETs (1)
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Si (1)
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DUAL (3)

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Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED (4)

30 (2)
Transistor Application
AMPLIFIER (6)
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SILICON (1)
Transistor Polarity
N-Channel (5)
Transistor Type
LDMOS (5)

N-Channel (5)

N-Channel JFET (3)
Type
RF Power MOSFET (5)
Unit Weight
0.726026 oz (1)

0.566059 oz (1)

1.101341 oz (1)

2.365692 oz (1)

1.699193 oz (1)
Vds - Drain-Source Breakdown Voltage
180 V (5)
Vgs - Gate-Source Voltage
40 V (4)
Vgs th - Gate-Source Threshold Voltage
3.6 V (4)
Voltage - Rated DC
65V (2)

125V (1)
Voltage - Test
28V (2)

7.5V (2)

13.6V (1)

50V (5)

10V (2)

50 V (5)
Voltage Rated
125V (1)

130V (1)

170 V (5)
Weight
130.492855mg (3)
Width
2.6mm (1)

6.48mm (1)

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RF MOSFETs Transistors

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100 Results

Product	Inventory	Pricing(USD)	Datasheet	RoHS	Additional Feature	Base Part Number	Base Product Number	Brand	Case Connection	Channel Type	Configuration	Contact Plating	Continuous Drain Current (ID)	Continuous Drain Current Id	Current - Test	Current Rating	Current Rating (Amps)	Drain Current-Max (Abs) (ID)	Drain Current-Max (ID)	Drain to Source Breakdown Voltage	Drain to Source Voltage (Vdss)	DS Breakdown Voltage-Min	ECCN Code	Element Configuration	Factory Lead Time	Factory Pack QuantityFactory Pack Quantity	FET Technology	Forward Transconductance - Min	Frequency	Gain	Gate to Source Voltage (Vgs)	Halogen Free	Height	Highest Frequency Band	Id - Continuous Drain Current	Ihs Manufacturer	Input Capacitance	JESD-30 Code	JESD-609 Code	Lead Free	Length	Lifecycle Status	Manufacturer	Manufacturer Part Number	Max Operating Temperature	Max Output Power	Max Power Dissipation	Maximum Operating Temperature	Mfr	Min Breakdown Voltage	Min Operating Temperature	Minimum Operating Temperature	Moisture Sensitivity Level (MSL)	Mount	Mounting Styles	Number of Elements	Number of Pins	Number of Terminals	Number of Terminations	Operating Frequency	Operating Mode	Operating Temperature Range	Operating Temperature-Max	Output Power	Package	Package / Case	Package Body Material	Package Description	Package Shape	Package Style	Packaging	Part Life Cycle Code	Part Status	Pbfree Code	Pd - Power Dissipation	Peak Reflow Temperature (Cel)	Pin Count	Polarity/Channel Type	Power - Output	Power Dissipation	Power Dissipation-Max (Abs)	Power Gain	Product Category	Product Status	Product Type	Published	Qualification Status	Radiation Hardening	Reach Compliance Code	REACH SVHC	Reflow Temperature-Max (s)	Risk Rank	RoHS	Rohs Code	RoHS Status	Series	Subcategory	Supplier Device Package	Surface Mount	Technology	Terminal Finish	Terminal Form	Terminal Position	Time@Peak Reflow Temperature-Max (s)	Transistor Application	Transistor Element Material	Transistor Polarity	Transistor Type	Type	Unit Weight	Vds - Drain-Source Breakdown Voltage	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Voltage - Rated DC	Voltage - Test	Voltage Rated	Weight	Width
PD57060-E STMicroelectronics	1197	-	-		HIGH RELIABILITY	PD57060	-	-	SOURCE	-	-	-	7A	-	100mA	7A	-	7A	-	65V	65V	-	EAR99	Single	25 Weeks	-	METAL-OXIDE SEMICONDUCTOR	-	945MHz	14.3dB	20V	-	-	-	-	-	-	R-PDSO-G2	e3	Lead Free	-	-	-	-	165u00b0C	60W	79W	-	-	65V	-65u00b0C	-	3 (168 Hours)	Surface Mount	-	1	3	-	2	-	ENHANCEMENT MODE	-	-	-	-	PowerSO-10 Exposed Bottom Pad	-	-	-	-	Tube	-	Active	-	-	250	10	N-CHANNEL	-	79W	-	-	-	-	-	-	Not Qualified	-	not_compliant	-	-	-	-	-	ROHS3 Compliant	-	-	-	-	-	Matte Tin (Sn) - annealed	GULL WING	DUAL	NOT SPECIFIED	AMPLIFIER	-	-	LDMOS	-	-	-	-	-	65V	28V	-	-	-
PD84001 STMicroelectronics	-	-	-		-	PD84001	-	-	SOURCE	-	-	-	1.5A	-	50mA	1.5A	-	-	-	-	18V	-	EAR99	Single	11 Weeks	-	METAL-OXIDE SEMICONDUCTOR	-	870MHz	-	15V	-	-	-	-	-	-	R-PDSO-F4	e3	Lead Free	-	ACTIVE (Last Updated: 8 months ago)	-	-	150u00b0C	1W	6W	-	-	18V	-65u00b0C	-	3 (168 Hours)	Surface Mount	-	1	3	-	4	-	ENHANCEMENT MODE	-	-	-	-	TO-243AA	-	-	-	-	Cut Tape (CT)	-	Active	-	-	260	4	N-CHANNEL	30dBm	6W	-	15dB	-	-	-	-	-	No	-	No SVHC	-	-	-	-	ROHS3 Compliant	-	-	-	-	-	Matte Tin (Sn)	FLAT	DUAL	30	AMPLIFIER	-	-	LDMOS	-	-	-	-	-	-	7.5V	-	130.492855mg	-
PD84002 STMicroelectronics	20	-	-		-	PD84002	-	-	SOURCE	-	-	-	2A	-	100mA	2A	-	2A	-	-	25V	-	EAR99	Single	11 Weeks	-	METAL-OXIDE SEMICONDUCTOR	-	870MHz	15dB	15V	-	-	-	-	-	-	-	e3	Lead Free	-	ACTIVE (Last Updated: 7 months ago)	-	-	150u00b0C	2W	6W	-	-	-	-65u00b0C	-	3 (168 Hours)	Surface Mount	-	1	3	-	3	-	ENHANCEMENT MODE	-	-	-	-	TO-243AA	-	-	-	-	Cut Tape (CT)	-	Active	-	-	260	3	N-CHANNEL	-	-	-	-	-	-	-	-	Not Qualified	-	not_compliant	No SVHC	-	-	-	-	ROHS3 Compliant	-	-	-	-	-	Matte Tin (Sn)	FLAT	-	30	AMPLIFIER	-	-	LDMOS	-	-	-	-	-	-	7.5V	-	130.492855mg	-
PD85004 STMicroelectronics	-	-	-		-	PD85004	-	-	SOURCE	-	-	-	2A	-	50mA	2A	-	2A	-	-	40V	-	EAR99	Single	11 Weeks	-	METAL-OXIDE SEMICONDUCTOR	-	870MHz	-	15V	-	1.6mm	-	-	-	16pF	R-PSSO-F3	-	-	4.6mm	ACTIVE (Last Updated: 8 months ago)	-	-	150u00b0C	5W	6W	-	-	-	-65u00b0C	-	3 (168 Hours)	Surface Mount	-	1	8	-	3	-	ENHANCEMENT MODE	-	-	-	-	TO-243AA	-	-	-	-	Cut Tape (CT)	-	Active	-	-	-	3	N-CHANNEL	4W	6W	-	17dB	-	-	-	-	-	No	-	No SVHC	-	-	-	-	ROHS3 Compliant	-	-	-	-	-	-	FLAT	-	-	AMPLIFIER	-	-	LDMOS	-	-	-	-	-	-	13.6V	-	130.492855mg	2.6mm
SD2918 STMicroelectronics	614	-	-		-	SD2918	-	-	-	-	SINGLE	-	6A	-	100mA	6A	-	6A	-	125V	5V	-	EAR99	-	-	-	METAL-OXIDE SEMICONDUCTOR	-	30MHz	22dB	20V	-	7.11mm	-	-	-	58pF	-	-	Lead Free	24.89mm	-	-	-	200u00b0C	30W	175W	-	-	125V	-65u00b0C	-	1 (Unlimited)	Screw	-	1	4	-	4	-	ENHANCEMENT MODE	-	-	-	-	M113	-	-	-	-	Tube	-	Obsolete	-	-	-	4	-	-	175W	-	-	-	-	-	-	-	No	-	-	-	-	-	-	ROHS3 Compliant	-	-	-	-	-	-	FLAT	RADIAL	-	-	-	-	N-Channel	-	-	-	-	-	125V	50V	-	-	6.48mm
SD2933W STMicroelectronics	5000	-	-		-	SD2933	-	-	-	-	Single	-	40A	-	250mA	40A	-	-	-	-	-	-	EAR99	-	32 Weeks	-	METAL-OXIDE SEMICONDUCTOR	-	30MHz	23.5dB	-	-	-	-	-	-	-	-	-	Lead Free	-	-	-	-	200u00b0C	-	648W	-	-	-	-65u00b0C	-	1 (Unlimited)	Screw	-	1	5	-	-	-	-	-	-	-	-	M177	-	-	-	-	Tray	-	Active	-	-	-	-	-	300W	-	-	-	-	-	-	-	-	No	-	-	-	-	-	-	ROHS3 Compliant	-	-	-	-	-	-	-	-	-	-	-	-	N-Channel	-	-	-	-	-	-	50V	125V	-	-
SD2943W STMicroelectronics	2473	-	-		-	SD2943	-	-	-	-	Single	-	40A	-	250mA	40A	-	-	-	-	-	-	EAR99	-	32 Weeks	-	METAL-OXIDE SEMICONDUCTOR	-	30MHz	25dB	20V	-	-	-	-	-	-	-	-	-	-	-	-	-	150u00b0C	-	648W	-	-	-	-65u00b0C	-	1 (Unlimited)	Screw	-	1	5	-	-	-	-	-	-	-	-	M177	-	-	-	-	Tray	-	Active	-	-	-	-	-	350W	-	-	-	-	-	-	-	-	No	-	-	-	-	-	-	ROHS3 Compliant	-	-	-	-	-	-	-	-	-	-	-	-	N-Channel	-	-	-	-	-	-	50V	130V	-	-
SD4933 STMicroelectronics	2168	-	-		-	SD4933	-	-	SOURCE	-	-	-	40A	-	250mA	40A	-	-	-	-	200V	-	EAR99	Single	32 Weeks	-	METAL-OXIDE SEMICONDUCTOR	-	30MHz	24dB	20V	-	-	-	-	-	-	O-PRFM-F4	-	Lead Free	-	ACTIVE (Last Updated: 7 months ago)	-	-	150u00b0C	300W	648W	-	-	-	-65u00b0C	-	1 (Unlimited)	Screw	-	1	177	-	4	-	ENHANCEMENT MODE	-	-	-	-	M177	-	-	-	-	Tray	-	Active	-	-	NOT SPECIFIED	4	-	-	-	-	-	-	-	-	-	Not Qualified	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	-	-	-	-	FLAT	RADIAL	NOT SPECIFIED	-	-	-	N-Channel	-	-	-	-	-	-	50V	-	-	-
SD4933MR STMicroelectronics	2541	-	-		-	SD4933	-	-	-	-	-	-	40A	-	250mA	40A	-	-	-	-	200V	-	EAR99	-	32 Weeks	-	-	-	30MHz	24dB	20V	-	-	-	-	-	-	-	-	-	-	ACTIVE (Last Updated: 8 months ago)	-	-	200u00b0C	-	648W	-	-	-	-65u00b0C	-	1 (Unlimited)	Screw	-	1	177	-	-	-	-	-	-	-	-	M177	-	-	-	-	Tray	-	Active	-	-	-	-	-	300W	-	-	-	-	-	-	-	-	No	-	-	-	-	-	-	ROHS3 Compliant	-	-	-	-	-	-	-	-	-	-	-	-	N-Channel	-	-	-	-	-	-	50V	-	-	-
SD57030-01 STMicroelectronics	150	-	-		-	SD57030	-	-	SOURCE	-	-	-	4A	-	50mA	4A	-	4A	-	65V	65V	-	EAR99	Single	32 Weeks	-	METAL-OXIDE SEMICONDUCTOR	-	945MHz	15dB	20V	-	-	-	-	-	58pF	R-PDFP-F2	-	Lead Free	-	ACTIVE (Last Updated: 8 months ago)	-	-	200u00b0C	30W	74W	-	-	65V	-65u00b0C	-	1 (Unlimited)	Surface Mount	-	1	250	-	2	-	ENHANCEMENT MODE	-	-	-	-	M250	-	-	-	-	Bulk	-	Active	-	-	NOT SPECIFIED	3	N-CHANNEL	-	74W	-	-	-	-	-	-	Not Qualified	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	-	-	-	-	FLAT	DUAL	NOT SPECIFIED	AMPLIFIER	-	-	LDMOS	-	-	-	-	-	65V	28V	-	-	-
SMMBFJ309LT1G ON Semiconductor	16674	-	-		-	-	-	-	-	-	-	-	-	-	-	30mA	-	-	-	-	-	-	-	Single	8 Weeks	-	-	-	-	-	25V	-	-	-	-	-	-	-	-	Lead Free	-	ACTIVE (Last Updated: 1 day ago)	-	-	150u00b0C	-	-	-	-	-	-55u00b0C	-	1 (Unlimited)	-	-	-	3	-	-	-	-	-	-	-	-	TO-236-3, SC-59, SOT-23-3	-	-	-	-	Tape & Reel (TR)	-	Active	yes	-	-	3	-	-	-	-	-	-	-	-	2006	-	-	-	-	-	-	-	-	ROHS3 Compliant	Automotive, AEC-Q101	-	-	-	-	-	-	-	-	-	-	-	N-Channel JFET	-	-	-	-	-	-	-	-	-	-
SMMBFJ310LT1G ON Semiconductor	200	-	-		-	MMBFJ310	-	-	-	-	-	Tin	-	-	10mA	-	60mA	-	-	-	-	-	EAR99	Single	8 Weeks	-	JUNCTION	-	-	12dB	25V	Halogen Free	-	-	-	-	-	-	e3	Lead Free	-	ACTIVE (Last Updated: 4 days ago)	-	-	150u00b0C	-	-	-	-	-	-55u00b0C	-	1 (Unlimited)	-	-	-	3	-	-	-	-	-	-	-	-	TO-236-3, SC-59, SOT-23-3	-	-	-	-	Tape & Reel (TR)	-	Active	yes	-	-	3	-	-	-	0.225W	-	-	-	-	2006	-	-	-	-	-	-	-	-	ROHS3 Compliant	Automotive, AEC-Q101	-	-	YES	-	-	-	-	-	-	-	-	N-Channel JFET	-	-	-	-	-	-	10V	-	-	-
SMMBFJ310LT3G ON Semiconductor	26500	-	-		-	MMBFJ310	-	-	-	-	-	-	-	-	10mA	-	60mA	-	-	-	-	-	EAR99	Single	8 Weeks	-	JUNCTION	-	-	12dB	25V	Halogen Free	-	-	-	-	-	-	e3	Lead Free	-	ACTIVE (Last Updated: 4 days ago)	-	-	150u00b0C	-	-	-	-	-	-55u00b0C	-	1 (Unlimited)	-	-	-	3	-	-	-	-	-	-	-	-	TO-236-3, SC-59, SOT-23-3	-	-	-	-	Tape & Reel (TR)	-	Active	yes	-	NOT SPECIFIED	3	-	-	-	0.225W	-	-	-	-	2009	-	-	-	-	-	-	-	-	ROHS3 Compliant	Automotive, AEC-Q101	-	-	YES	-	Tin (Sn)	-	-	NOT SPECIFIED	-	-	-	N-Channel JFET	-	-	-	-	-	-	10V	-	-	-
VEC2301-TL-E onsemi	453650	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	onsemi	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
VRF150 Microchip Technology	207	-	-		-	-	VRF150	-	-	-	N-Channel	-	-	-	250 mA	-	1mA	-	-	-	-	-	-	-	-	1	-	4.5 mS	150MHz	18 dB	-	-	-	-	16 A	-	-	-	-	-	-	-	-	-	-	-	-	+ 150 C	Microchip Technology	-	-	- 65 C	-	-	-	-	-	-	-	150 MHz	-	- 65 C to + 150 C	-	150 W	Box	M174	-	-	-	-	-	-	-	-	300 W	-	-	-	150W	-	-	-	-	Active	-	-	-	-	-	-	-	-	Details	-	-	-	-	M174	-	-	-	-	-	-	-	-	N-Channel	-	RF Power MOSFET	0.726026 oz	180 V	40 V	3.6 V	-	50 V	170 V	-	-
VRF151 Microchip Technology	42	-	-		-	-	VRF151	-	-	N	N-Channel	-	-	16	250 mA	-	1mA	-	-	-	-	-	-	-	-	1	-	5 mS	175MHz	22 dB	-	-	-	-	16 A	-	-	-	-	-	-	-	-	-	-	-	-	+ 150 C	Microchip Technology	-	-	- 65 C	-	-	Flange Mount	-	-	-	-	175 MHz	-	- 65 C to + 150 C	-	150 W	Tube	M174	-	-	-	-	-	-	-	-	300 W	-	-	-	150W	300	-	-	-	Active	-	-	-	-	-	-	-	-	Details	-	-	-	-	M174	-	-	-	-	-	-	-	-	N-Channel	-	RF Power MOSFET	0.566059 oz	180 V	40 V	3.6 V	-	50 V	170 V	-	-
VRF152GMP Microchip Technology	2972	-	-	-	-	-	VRF152	Microchip Technology / Atmel	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Microchip	-	-	-	-	-	Microchip Technology	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	RF MOSFET Transistors	Active	RF MOSFET Transistors	-	-	-	-	-	-	-	-	-	-	-	MOSFETs	-	-	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
VRF2933 Microchip Technology	2840	-	-		-	-	VRF2933	-	SOURCE	N	N-Channel	-	-	42	250 mA	-	2mA	-	40 A	-	-	170 V	EAR99	-	-	1	METAL-OXIDE SEMICONDUCTOR	8 mS	150MHz	25 dB	-	-	-	VERY HIGH FREQUENCY BAND	42 A	MICROSEMI CORP	-	O-CRFM-F4	-	-	-	-	-	VRF2933	-	-	-	+ 150 C	Microchip Technology	-	-	- 65 C	-	-	Flange Mount	1	-	4	-	30 MHz	ENHANCEMENT MODE	- 65 C to + 150 C	200 u00b0C	300 W	Bulk	M177	CERAMIC, METAL-SEALED COFIRED	0.630 INCH, ROHS COMPLIANT, M177, SOE, 4 PIN	ROUND	FLANGE MOUNT	-	Active	-	-	648 W	NOT SPECIFIED	-	N-CHANNEL	300W	648	-	-	-	Active	-	-	Not Qualified	-	compliant	-	NOT SPECIFIED	2.19	Details	Yes	-	-	-	M177	YES	-	-	FLAT	RADIAL	-	AMPLIFIER	SILICON	N-Channel	-	RF Power MOSFET	1.101341 oz	180 V	40 V	3.6 V	-	50 V	170 V	-	-
VRF2933MP Microchip Technology	2913	-	-		-	-	VRF2933	-	-	-	N-Channel	-	-	-	250 mA	-	2mA	-	-	-	-	-	-	-	-	1	-	-	150MHz	25dB	-	-	-	-	42 A	-	-	-	-	-	-	-	-	-	-	-	-	+ 150 C	Microchip Technology	-	-	- 65 C	-	-	Flange Mount	-	-	-	-	150 MHz	-	-	-	300 W	Bulk	M177	-	-	-	-	-	-	-	-	-	-	-	-	300W	-	-	-	-	Active	-	-	-	-	-	-	-	-	Details	-	-	-	-	M177	-	-	-	-	-	-	-	-	N-Channel	-	RF Power MOSFET	2.365692 oz	180 V	-	-	-	50 V	170 V	-	-
VRF2944 Microchip Technology	2188	-	-		-	-	-	-	-	-	N-Channel	-	-	50	250 mA	-	50A	-	-	-	-	-	-	-	-	1	-	10 mS	30MHz	25 dB	-	-	-	-	50 A	-	-	-	-	-	-	-	-	-	-	-	-	+ 150 C	Microchip Technology	-	-	- 65 C	-	-	Flange Mount	-	-	-	-	30 MHz	-	- 65 C to + 150 C	-	400 W	Bulk	M177	-	-	-	-	-	-	-	-	795 W	-	-	-	400W	795	-	-	-	Active	-	-	-	-	-	-	-	-	Details	-	-	-	-	M177	-	-	-	-	-	-	-	-	N-Channel	-	RF Power MOSFET	1.699193 oz	180 V	40 V	3.6 V	-	50 V	170 V	-	-

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