RF MOSFETs Transistors – Cybertant Technology

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FET Technology
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520MHz (5)

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HTS Code
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8541.29.00.75 (3)
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Max Frequency
45 MHz (1)
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150u00b0C (2)

175 u00b0C (3)

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200mW (2)

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+ 175 C (4)

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onsemi (1)

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-55u00b0C (2)

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- 55 C (6)
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1 (Unlimited) (4)

3 (168 Hours) (9)
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1 (1)
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1dB (2)
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4 (1)
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3 (2)

10 (1)
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2 (1)
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40 MHz (3)

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225u00b0C (1)

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-40u00b0C (1)
Operating Temperature Range
- 55 C to + 175 C (4)

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Operating Temperature-Max
175 u00b0C (2)
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750 W (3)

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TO-236-3, SC-59, SOT-23-3 (2)

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Pbfree Code
yes (2)

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Pd - Power Dissipation
1.5 kW (3)

165 W (1)

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Peak Reflow Temperature (Cel)
260 (10)

NOT SPECIFIED (3)
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N-CHANNEL (9)
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Published
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Radiation Hardening
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Rds On - Drain-Source Resistance
1 Ohms (1)
Reach Compliance Code
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compliant (1)

unknown (1)
REACH SVHC
No SVHC (1)
Reflow Temperature-Max (s)
NOT SPECIFIED (2)
Rise Time
6 ns (1)

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3.1 ns (1)

4.1 ns (1)
Risk Rank
1.63 (1)

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RoHS
Details (6)
Rohs Code
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ROHS3 Compliant (13)
Series
* (1)
Supplier Device Package
T-1 (3)

TO-247 (1)

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Surface Mount
YES (11)
Terminal Finish
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Terminal Form
GULL WING (2)

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DUAL (5)
Termination
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Test Voltage
125 V (1)

250 V (1)

400 V (1)

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Time@Peak Reflow Temperature-Max (s)
40 (10)

NOT SPECIFIED (1)
Transistor Application
AMPLIFIER (4)
Transistor Element Material
SILICON (2)
Transistor Polarity
N-Channel (6)
Transistor Type
N-Channel JFET (2)

LDMOS (Dual) (1)

LDMOS (10)
Type
RF Power MOSFET (6)
Unit Weight
0.706030 oz (1)

0.669777 oz (1)

0.687987 oz (1)

1.340411 oz (2)

3.271433 oz (1)
Usage Level
Automotive grade (7)

Military grade (1)
Vds - Drain-Source Breakdown Voltage
500 V (2)

1 kV (3)

450 V (1)
Vgs - Gate-Source Voltage
30 V (6)
Vgs th - Gate-Source Threshold Voltage
5 V (4)

4 V (1)

3.3 V (1)
Voltage - Test
5V (2)

12.5V (2)

7.5V (4)

13.6V (2)

28V (3)

125 V (1)

250 V (1)

400 V (1)

150 V (2)
Voltage Rated
40V (4)

30V (4)

65V (3)

500 V (1)

1000 V (3)

450 V (1)
Voltage, Rating
500 V (1)

1 kV (3)
Weight
1.437803g (1)
Width
1.5mm (2)

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RF MOSFETs Transistors

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100 Results

Product	Inventory	Pricing(USD)	Datasheet	RoHS	Additional Feature	Base Part Number	Base Product Number	Breakdown Voltage / V	Case Connection	Channel Mode	Channel Type	Configuration	Contact Plating	Continuous Drain Current (ID)	Continuous Drain Current Id	Current - Test	Current Rating	Current Rating (Amps)	Drain Current-Max (Abs) (ID)	Drain Current-Max (ID)	Drain to Source Voltage (Vdss)	DS Breakdown Voltage-Min	ECCN Code	Element Configuration	Factory Lead Time	Factory Pack QuantityFactory Pack Quantity	Fall Time	FET Technology	Forward Transconductance - Min	Frequency	Gain	Gate to Source Voltage (Vgs)	Height	Highest Frequency Band	HTS Code	Id - Continuous Drain Current	Ihs Manufacturer	JESD-30 Code	JESD-609 Code	Lead Free	Length	Lifecycle Status	Manufacturer Part Number	Max Frequency	Max Operating Temperature	Max Power Dissipation	Maximum Operating Temperature	Mfr	Min Operating Temperature	Minimum Operating Temperature	Moisture Sensitivity Level (MSL)	Moisture Sensitivity Levels	Mount	Mounting Styles	Noise Figure	Number of Elements	Number of Channels	Number of Pins	Number of Terminals	Number of Terminations	Operating Frequency	Operating Mode	Operating Temperature (Max.)	Operating Temperature (Min.)	Operating Temperature Range	Operating Temperature-Max	Output Power	Package	Package / Case	Package Body Material	Package Description	Package Shape	Package Style	Packaging	Part Life Cycle Code	Part Status	Pbfree Code	Pd - Power Dissipation	Peak Reflow Temperature (Cel)	Pin Count	Polarity/Channel Type	Power - Output	Power Dissipation	Power Dissipation Ambient-Max	Power Dissipation-Max (Abs)	Product Status	Published	Qualification Status	Radiation Hardening	Rds On - Drain-Source Resistance	Reach Compliance Code	REACH SVHC	Reflow Temperature-Max (s)	Rise Time	Risk Rank	RoHS	Rohs Code	RoHS Status	Series	Supplier Device Package	Surface Mount	Terminal Finish	Terminal Form	Terminal Position	Termination	Test Voltage	Time@Peak Reflow Temperature-Max (s)	Transistor Application	Transistor Element Material	Transistor Polarity	Transistor Type	Type	Unit Weight	Usage Level	Vds - Drain-Source Breakdown Voltage	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Voltage - Test	Voltage Rated	Voltage, Rating	Weight	Width
2SK3072-TB-E onsemi	2266	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	onsemi	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK3557-6-TB-E ON Semiconductor	-	-	-		LOW NOISE	2SK3557	-	-	-	-	-	-	Tin	50mA	-	1mA	50mA	-	0.05A	-	15V	-	EAR99	Single	9 Weeks	-	-	JUNCTION	-	1kHz	-	-15V	1.1mm	-	8541.21.00.95	-	-	-	e6	Lead Free	2.9mm	ACTIVE (Last Updated: 6 days ago)	-	-	150u00b0C	200mW	-	-	-55u00b0C	-	1 (Unlimited)	-	-	-	1dB	1	-	3	-	3	-	DEPLETION MODE	-	-	-	-	-	-	TO-236-3, SC-59, SOT-23-3	-	-	-	-	Tape & Reel (TR)	-	Active	yes	-	-	3	-	-	200mW	-	-	-	2007	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	YES	-	GULL WING	DUAL	-	-	-	AMPLIFIER	-	-	N-Channel JFET	-	-	-	-	-	-	5V	-	-	1.437803g	1.5mm
2SK3557-7-TB-E ON Semiconductor	-	-	-		LOW NOISE	2SK3557	-	15V	-	-	-	-	Tin	50mA	-	1mA	50mA	-	0.05A	-	15V	-	EAR99	Single	14 Weeks	-	-	JUNCTION	-	1kHz	-	-15V	1.1mm	-	8541.21.00.95	-	-	-	e6	Lead Free	2.9mm	ACTIVE (Last Updated: 3 days ago)	-	-	150u00b0C	200mW	-	-	-55u00b0C	-	1 (Unlimited)	-	-	-	1dB	1	-	3	-	3	-	DEPLETION MODE	-	-	-	-	-	-	TO-236-3, SC-59, SOT-23-3	-	-	-	-	Tape & Reel (TR)	-	Active	yes	-	-	3	-	-	200mW	-	-	-	2007	-	-	-	-	No SVHC	-	-	-	-	-	ROHS3 Compliant	-	-	YES	-	GULL WING	DUAL	SMD/SMT	-	-	AMPLIFIER	-	-	N-Channel JFET	-	-	-	-	-	-	5V	-	-	-	1.5mm
AFT05MP075NR1 NXP USA Inc.	3	-	-		-	-	-	-	-	-	-	Single	-	-	-	400mA	-	-	-	-	-	-	EAR99	-	10 Weeks	-	-	METAL-OXIDE SEMICONDUCTOR	-	520MHz	18.5dB	-	-	-	8541.29.00.40	-	-	-	e3	-	-	-	-	-	-	-	-	-	-	-	3 (168 Hours)	-	-	-	-	-	-	-	-	-	-	-	225u00b0C	-	-	-	-	-	TO-270AB	-	-	-	-	Tape & Reel (TR)	-	Active	-	-	260	-	N-CHANNEL	70W	-	-	690W	-	2009	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	YES	Matte Tin (Sn)	-	-	-	-	40	-	-	-	LDMOS (Dual)	-	-	-	-	-	-	12.5V	40V	-	-	-
AFT05MS003NT1 NXP USA Inc.	500	-	-		-	-	-	-	-	-	-	-	-	-	-	100mA	-	-	-	-	-	-	EAR99	-	10 Weeks	-	-	-	-	520MHz	20.8dB	-	-	-	8541.29.00.75	-	-	-	e3	-	-	-	-	-	-	-	-	-	-	-	1 (Unlimited)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	TO-243AA	-	-	-	-	Tape & Reel (TR)	-	Active	-	-	NOT SPECIFIED	-	-	3W	-	-	-	-	2014	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	-	Tin (Sn)	-	-	-	-	NOT SPECIFIED	-	-	-	LDMOS	-	-	-	-	-	-	7.5V	30V	-	-	-
AFT05MS004NT1 NXP USA Inc.	10000	-	-		-	-	-	-	-	-	-	-	-	-	-	100mA	-	-	-	-	-	-	EAR99	-	10 Weeks	-	-	-	-	520MHz	20.9dB	-	-	-	8541.29.00.75	-	-	-	e3	-	-	-	-	-	-	-	-	-	-	-	1 (Unlimited)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	TO-243AA	-	-	-	-	Tape & Reel (TR)	-	Active	-	-	260	-	-	4.9W	-	-	-	-	2010	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	-	Matte Tin (Sn)	-	-	-	-	40	-	-	-	LDMOS	-	-	Automotive grade	-	-	-	7.5V	30V	-	-	-
AFT05MS006NT1 NXP USA Inc.	7	-	-		-	-	-	-	-	-	-	-	-	-	-	100mA	-	-	-	-	-	-	EAR99	-	10 Weeks	-	-	-	-	520MHz	18.3dB	-	-	-	8541.29.00.75	-	-	-	e3	-	-	-	-	-	-	-	-	-	-	-	3 (168 Hours)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	PLD-1.5W	-	-	-	-	Tape & Reel (TR)	-	Not For New Designs	-	-	260	-	-	6W	-	-	-	-	2009	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	-	Matte Tin (Sn)	-	-	-	-	40	-	-	-	LDMOS	-	-	Automotive grade	-	-	-	7.5V	30V	-	-	-
AFT05MS031NR1 NXP USA Inc.	495	-	-		-	AFT05MS031	-	-	-	-	-	Single	-	-	-	10mA	-	-	-	-	-	-	EAR99	-	10 Weeks	-	-	METAL-OXIDE SEMICONDUCTOR	-	520MHz	17.7dB	-	-	-	8541.29.00.40	-	-	-	e3	-	-	-	-	-	-	-	-	-	-	-	3 (168 Hours)	-	-	-	-	-	-	-	-	-	-	-	150u00b0C	-	-	-	-	-	TO-270AA	-	-	-	-	Tape & Reel (TR)	-	Active	-	-	260	-	N-CHANNEL	31W	-	-	294W	-	2009	-	-	-	not_compliant	-	-	-	-	-	-	ROHS3 Compliant	-	-	YES	Tin (Sn)	-	-	-	-	40	-	-	-	LDMOS	-	-	Military grade	-	-	-	13.6V	40V	-	-	-
AFT09MS007NT1 NXP USA Inc.	10000	-	-		-	-	-	-	-	-	-	Single	-	-	-	100mA	-	-	-	-	-	-	EAR99	-	10 Weeks	-	-	METAL-OXIDE SEMICONDUCTOR	-	870MHz	15.2dB	-	-	-	8541.29.00.40	-	-	-	e3	-	-	-	-	-	-	-	-	-	-	-	3 (168 Hours)	-	-	-	-	-	-	-	-	-	-	-	150u00b0C	-	-	-	-	-	PLD-1.5W	-	-	-	-	Tape & Reel (TR)	-	Active	-	-	260	-	N-CHANNEL	7.3W	-	-	182W	-	2006	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	YES	Matte Tin (Sn)	-	-	-	-	40	-	-	-	LDMOS	-	-	-	-	-	-	7.5V	30V	-	-	-
AFT09MS015NT1 NXP USA Inc.	11631	-	-		-	-	-	-	-	-	-	-	-	-	-	100mA	-	-	-	-	-	-	EAR99	-	10 Weeks	-	-	-	-	870MHz	17.2dB	-	-	-	8541.29.00.40	-	-	-	e3	-	-	-	-	-	-	-	-	-	-	-	3 (168 Hours)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	PLD-1.5W	-	-	-	-	Tape & Reel (TR)	-	Active	-	-	260	-	-	16W	-	-	-	-	2009	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	-	Matte Tin (Sn)	-	-	-	-	40	-	-	-	LDMOS	-	-	Automotive grade	-	-	-	12.5V	40V	-	-	-
AFT09MS031NR1 NXP USA Inc.	500	-	-		-	AFT09MS031	-	-	-	-	-	Single	-	-	-	500mA	-	-	-	-	-	-	EAR99	-	10 Weeks	-	-	METAL-OXIDE SEMICONDUCTOR	-	870MHz	17.2dB	-	-	-	8541.29.00.40	-	-	-	e3	-	-	-	-	-	-	-	-	-	-	-	3 (168 Hours)	-	-	-	-	-	-	-	-	-	-	-	150u00b0C	-	-	-	-	-	TO-270AA	-	-	-	-	Tape & Reel (TR)	-	Active	-	-	260	-	N-CHANNEL	31W	-	-	317W	-	2006	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	YES	Matte Tin (Sn)	-	-	-	-	40	-	-	-	LDMOS	-	-	Automotive grade	-	-	-	13.6V	40V	-	-	-
AFT20S015GNR1 NXP USA Inc.	-	-	-		-	-	-	-	-	-	-	Single	-	-	-	132mA	-	-	-	-	-	-	EAR99	-	10 Weeks	-	-	METAL-OXIDE SEMICONDUCTOR	-	2.17GHz	17.6dB	-	-	-	8541.29.00.40	-	-	-	e3	-	-	-	-	-	-	-	-	-	-	-	3 (168 Hours)	-	-	-	-	-	-	-	-	-	-	-	125u00b0C	-	-	-	-	-	TO-270BA	-	-	-	-	Tape & Reel (TR)	-	Active	-	-	260	-	N-CHANNEL	1.5W	-	-	-	-	2006	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	YES	Matte Tin (Sn)	-	-	-	-	40	-	-	-	LDMOS	-	-	Automotive grade	-	-	-	28V	65V	-	-	-
AFT27S006NT1 NXP USA Inc.	500	-	-		-	-	-	-	-	-	-	Single	-	-	-	70mA	-	-	-	-	-	-	EAR99	-	10 Weeks	-	-	METAL-OXIDE SEMICONDUCTOR	-	2.17GHz	22dB	-	-	-	-	-	-	R-PDFM-F2	e3	-	-	-	-	-	-	-	-	-	-	-	3 (168 Hours)	-	-	-	-	1	-	-	-	2	-	ENHANCEMENT MODE	150u00b0C	-40u00b0C	-	-	-	-	PLD-1.5W	-	-	-	-	Tape & Reel (TR)	-	Active	-	-	260	-	N-CHANNEL	28.8dBm	-	1.5W	-	-	2013	-	-	-	not_compliant	-	-	-	-	-	-	ROHS3 Compliant	-	-	YES	Tin (Sn)	FLAT	DUAL	-	-	40	-	-	-	LDMOS	-	-	Automotive grade	-	-	-	28V	65V	-	-	-
AFT27S010NT1 NXP USA Inc.	1	-	-		-	-	-	-	-	-	-	Single	-	-	-	90mA	-	-	-	-	-	-	EAR99	-	10 Weeks	-	-	METAL-OXIDE SEMICONDUCTOR	-	2.17GHz	21.7dB	-	-	-	8541.29.00.40	-	-	-	e3	-	-	-	-	-	-	-	-	-	-	-	3 (168 Hours)	-	-	-	-	-	-	-	-	-	-	-	150u00b0C	-	-	-	-	-	PLD-1.5W	-	-	-	-	Tape & Reel (TR)	-	Active	-	-	260	-	N-CHANNEL	1.26W	-	-	-	-	2013	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	YES	Matte Tin (Sn)	-	-	-	-	40	-	-	-	LDMOS	-	-	Automotive grade	-	-	-	28V	65V	-	-	-
ARF1500 Microchip Technology	2283	-	-		HIGH RELIABILITY	-	ARF1500	-	ISOLATED	Enhancement	-	N-Channel	-	60 A	-	-	60 A	60A	60 A	60 A	500 V	500 V	-	-	-	1	10 ns	METAL-OXIDE SEMICONDUCTOR	6 mS	27.12MHz	17 dB	30 V	-	VERY HIGH FREQUENCY BAND	-	60 A	MICROSEMI CORP	S-CDFP-F6	e1	-	-	Production (Last Updated: 2 months ago)	ARF1500	-	175 u00b0C	1.5 kW	+ 175 C	Microchip Technology	-55 u00b0C	- 55 C	-	1	-	Flange Mount	-	1	-	-	6	-	40 MHz	ENHANCEMENT MODE	-	-	- 55 C to + 175 C	175 u00b0C	750 W	Box	T-1	CERAMIC, METAL-SEALED COFIRED	CERAMIC PACKAGE-6	SQUARE	FLATPACK	-	Active	-	Yes	1.5 kW	NOT SPECIFIED	6	N-CHANNEL	750W	-	-	1500 W	Active	-	Not Qualified	No	-	compliant	-	NOT SPECIFIED	6 ns	1.63	Details	Yes	-	-	T-1	YES	Tin/Silver/Copper (Sn/Ag/Cu)	FLAT	DUAL	-	125 V	-	AMPLIFIER	SILICON	N-Channel	-	RF Power MOSFET	0.706030 oz	-	500 V	30 V	5 V	125 V	500 V	500 V	-	-
ARF1501 Microchip Technology	2699	-	-		HIGH RELIABILITY	-	ARF1501	-	ISOLATED	Enhancement	N Channel	N-Channel	-	30 A	30	-	30 A	30A	30 A	30 A	1 kV	1000 V	EAR99	-	-	1	13 ns	METAL-OXIDE SEMICONDUCTOR	5.5 mS	27.12MHz	17 dB	30 V	-	VERY HIGH FREQUENCY BAND	-	30 A	MICROSEMI CORP	S-CDFP-F6	e0	Lead Free	-	Production (Last Updated: 2 months ago)	ARF1501	-	175 u00b0C	1.5 kW	+ 175 C	Microchip Technology	-55 u00b0C	- 55 C	-	-	-	Flange Mount	-	1	-	-	6	-	40 MHz	ENHANCEMENT MODE	-	-	- 55 C to + 175 C	175 u00b0C	750 W	Tube	T-1	CERAMIC, METAL-SEALED COFIRED	CERAMIC PACKAGE-6	SQUARE	FLATPACK	Bulk	Active	-	No	1.5 kW	NOT SPECIFIED	6	N-CHANNEL	750W	1.5	-	1500 W	Active	-	Not Qualified	No	-	unknown	-	NOT SPECIFIED	5 ns	1.8	Details	No	-	-	T-1	YES	TIN LEAD	FLAT	DUAL	-	250 V	-	AMPLIFIER	SILICON	N-Channel	-	RF Power MOSFET	0.669777 oz	-	1 kV	30 V	5 V	250 V	1000 V	1 kV	-	-
ARF1510 Microchip Technology	2634	-	-		-	-	ARF1510	-	-	-	N	N-Channel	-	8 A	8	-	8 A	8A	-	-	1 kV	-	-	-	-	1	10 ns	-	3 mS	40.7MHz	17 dB	30 V	-	-	-	8 A	-	-	-	-	-	Production (Last Updated: 2 months ago)	-	-	175 u00b0C	1.5 kW	+ 175 C	Microchip Technology	-55 u00b0C	- 55 C	-	-	Surface Mount	Flange Mount	-	4	-	10	-	-	40 MHz	-	-	-	- 55 C to + 175 C	-	750 W	Tube	T-1	-	-	-	-	Bulk	-	-	-	1.5 kW	-	-	-	750W	1.5	-	-	Active	-	-	No	-	-	-	-	5 ns	-	Details	-	-	-	T-1	-	-	-	-	-	400 V	-	-	-	N-Channel	-	RF Power MOSFET	0.687987 oz	-	1 kV	30 V	5 V	400 V	1000 V	1 kV	-	-
ARF449BG Microchip Technology	-	-	-		-	-	ARF449	-	-	Enhancement	N Channel	N-Channel	-	-	9	-	-	9A	-	-	-	-	-	-	-	1	3 ns	-	3 mS	81.36MHz	13 dB	-	-	-	-	9 A	-	-	-	-	-	-	-	-	-	-	+ 150 C	Microchip Technology	-	- 55 C	-	-	-	Through Hole	-	-	-	-	-	-	120 MHz	-	-	-	- 55 C to + 150 C	-	90 W	Bulk	TO-247-3	-	-	-	-	Tube	-	-	-	165 W	-	-	-	90W	165	-	-	Obsolete	-	-	-	-	-	-	-	3.1 ns	-	Details	-	-	-	TO-247	-	-	-	-	-	-	-	-	-	N-Channel	-	RF Power MOSFET	1.340411 oz	-	450 V	30 V	5 V	150 V	450 V	-	-	-
ARF466BG Microchip Technology	-	-	-		-	-	ARF466	-	-	-	-	N-Channel	-	13 A	-	-	13 A	13A	-	-	-	-	-	-	-	1	-	-	3.3 mS	40.68MHz	16 dB	-	-	-	-	13 A	-	-	-	-	-	Production (Last Updated: 2 months ago)	-	45 MHz	150 u00b0C	-	+ 150 C	Microchip Technology	-55 u00b0C	- 55 C	-	-	Through Hole	Through Hole	-	1	1 Channel	-	-	-	45 MHz	-	-	-	-	-	300 W	Tube	TO-247-3	-	-	-	-	Tube	-	-	-	357 W	-	-	-	150W	-	-	-	Active	-	-	No	1 Ohms	-	-	-	-	-	Details	-	-	-	TO-264	-	-	-	-	-	150 V	-	-	-	N-Channel	-	RF Power MOSFET	1.340411 oz	-	1 kV	30 V	4 V	150 V	1000 V	1 kV	-	-
ARF475FL Atmel (Microchip Technology)	-	-	-		-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	4 ns	-	3 mS	-	15 dB	-	-	-	-	10 A	-	-	-	-	-	-	-	-	-	-	+ 175 C	-	-	- 55 C	-	-	-	-	-	-	-	-	-	-	150 MHz	-	-	-	- 55 C to + 175 C	-	900 W	-	-	-	-	-	-	-	-	-	-	910 W	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	4.1 ns	-	Details	-	-	-	-	-	-	-	-	-	-	-	-	-	N-Channel	-	RF Power MOSFET	3.271433 oz	-	500 V	30 V	3.3 V	-	-	-	-	-

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