RF MOSFETs Transistors – Cybertant Technology

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Frequency
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HTS Code
8541.21.00.75 (6)

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10 A (1)
Ihs Manufacturer
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Input Capacitance
1.2pF (1)
JEDEC-95 Code
MO-229 (1)

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JESD-30 Code
R-XDFM-F8 (1)

R-PDSO-G3 (2)
JESD-609 Code
e3 (12)

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Lead Free (15)
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Production (Last Updated: 2 months ago) (1)

OBSOLETE (Last Updated: 6 days ago) (1)

LAST SHIPMENTS (Last Updated: 1 week ago) (1)

ACTIVE (Last Updated: 2 days ago) (1)

LAST SHIPMENTS (Last Updated: 20 hours ago) (1)
Manufacturer Part Number
ARF476FL (1)
Max Frequency
150 MHz (1)
Max Operating Temperature
175 u00b0C (1)

160u00b0C (1)

150u00b0C (13)
Max Power Dissipation
910 W (1)

300mW (1)

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625mW (1)
Maximum Operating Temperature
+ 175 C (1)
Mfr
Microchip Technology (1)

onsemi (3)
Min Operating Temperature
-55 u00b0C (1)

-65u00b0C (4)

-55u00b0C (10)
Minimum Operating Temperature
- 55 C (1)
Moisture Sensitivity Level (MSL)
1 (Unlimited) (16)
Mount
Screw (1)

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Through Hole (5)
Mounting Styles
Flange Mount (1)
Noise Figure
0.4dB (1)

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Nominal Supply Current
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Nominal Vgs
-5 V (1)

370 mV (1)
Number of Elements
2 (2)

1 (15)
Number of Channels
1 (2)
Number of Pins
8 (2)

4 (6)

3 (6)

6 (1)
Number of Terminals
8 (1)
Number of Terminations
4 (5)

8 (1)

3 (8)

6 (1)
Operating Frequency
150 MHz (1)
Operating Mode
ENHANCEMENT MODE (5)

DUAL GATE, DEPLETION MODE (3)

DEPLETION MODE (8)
Operating Supply Voltage
3V (1)
Operating Temperature (Max.)
150u00b0C (2)
Operating Temperature Range
- 55 C to + 175 C (1)
Operating Temperature-Max
175 u00b0C (1)
Output Power
900 W (1)
P1dB
19 dBm (1)
Package
Tray (1)

Bulk (3)
Package / Case
SC-82A, SOT-343 (5)

8-WFDFN Exposed Pad (1)

TO-226-3, TO-92-3 (TO-226AA) (5)

TO-236-3, SC-59, SOT-23-3 (3)

TO-253-4, TO-253AA (1)

6-VSSOP, SC-88, SOT-363 (1)
Package Body Material
UNSPECIFIED (1)
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Pbfree Code
No (1)

no (3)

yes (3)
Pd - Power Dissipation
910 W (1)
Peak Reflow Temperature (Cel)
NOT SPECIFIED (2)

260 (6)

240 (3)
Pin Count
3 (6)

4 (1)
Polarity/Channel Type
N-CHANNEL (5)
Power - Output
900W (1)

10dBm (1)

29dBm (1)

14.4dBm (1)
Power Dissipation
910 (1)

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350mW (5)
Power Dissipation-Max (Abs)
0.25W (1)

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Published
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Not Qualified (7)
Radiation Hardening
No (9)
Reach Compliance Code
compliant (1)

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REACH SVHC
No SVHC (7)

Unknown (1)
Reflow Temperature-Max (s)
NOT SPECIFIED (1)
Rise Time
4.1 ns (1)
Risk Rank
2.27 (1)
RoHS
Details (1)

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Rohs Code
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RoHS Status
RoHS Compliant (8)

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ROHS3 Compliant (5)
Series
* (3)
Surface Mount
YES (3)
Terminal Finish
Tin/Lead (Sn/Pb) (3)

Tin (Sn) (2)

TIN (1)
Terminal Form
FLAT (1)

GULL WING (9)
Terminal Position
DUAL (10)

BOTTOM (5)
Termination
SMD/SMT (2)

Through Hole (3)
Test Current
15 mA (1)
Test Voltage
150 V (1)
Threshold Voltage
370mV (1)
Time@Peak Reflow Temperature-Max (s)
30 (3)

NOT SPECIFIED (3)
Transistor Application
AMPLIFIER (14)
Transistor Element Material
SILICON (3)
Transistor Polarity
N-Channel (1)
Transistor Type
pHEMT FET (2)

E-pHEMT (2)

N-Channel (4)

N-Channel JFET (7)

2 N-Channel (Dual) (1)
Turn Off Delay Time
12 ns (1)
Turn On Delay Time
5.1 ns (1)
Type
RF Power MOSFET (1)
Unit Weight
0.462535 oz (1)
Usage Level
Military grade (2)
Vds - Drain-Source Breakdown Voltage
500 V (1)
Vgs - Gate-Source Voltage
30 V (1)
Vgs th - Gate-Source Threshold Voltage
3.3 V (1)
Voltage - Rated DC
5.5V (1)

4.5V (1)

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3V (1)

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20V (1)

25V (1)
Voltage - Test
150 V (1)

2V (1)

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3V (1)

10V (2)
Voltage Rated
500 V (1)

8V (3)

30V (1)

20V (1)
Voltage, Rating
500 V (1)
Weight
200mg (4)

201mg (1)
Width
1.35mm (1)

4.19mm (2)

3.86mm (2)

1.3mm (1)

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RF MOSFETs Transistors

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100 Results

Product	Inventory	Pricing(USD)	Datasheet	RoHS	Additional Feature	Base Part Number	Base Product Number	Breakdown Voltage / V	Case Connection	Channel Type	Color	Configuration	Contact Plating	Continuous Drain Current (ID)	Continuous Drain Current Id	Current - Test	Current Rating	Current Rating (Amps)	Drain Current-Max (Abs) (ID)	Drain Current-Max (ID)	Drain to Source Breakdown Voltage	Drain to Source Voltage (Vdss)	DS Breakdown Voltage-Min	Dual Supply Voltage	ECCN Code	Element Configuration	Factory Lead Time	Factory Pack QuantityFactory Pack Quantity	Fall Time	Feedback Cap-Max (Crss)	FET Technology	Forward Transconductance - Min	Frequency	Gain	Gate to Source Voltage (Vgs)	Halogen Free	Height	Highest Frequency Band	HTS Code	Id - Continuous Drain Current	Ihs Manufacturer	Input Capacitance	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Lead Free	Length	Lifecycle Status	Manufacturer Part Number	Max Frequency	Max Operating Temperature	Max Power Dissipation	Maximum Operating Temperature	Mfr	Min Operating Temperature	Minimum Operating Temperature	Moisture Sensitivity Level (MSL)	Mount	Mounting Styles	Noise Figure	Nominal Supply Current	Nominal Vgs	Number of Elements	Number of Channels	Number of Pins	Number of Terminals	Number of Terminations	Operating Frequency	Operating Mode	Operating Supply Voltage	Operating Temperature (Max.)	Operating Temperature Range	Operating Temperature-Max	Output Power	P1dB	Package	Package / Case	Package Body Material	Package Shape	Package Style	Packaging	Part Life Cycle Code	Part Status	Pbfree Code	Pd - Power Dissipation	Peak Reflow Temperature (Cel)	Pin Count	Polarity/Channel Type	Power - Output	Power Dissipation	Power Dissipation-Max (Abs)	Product Status	Published	Qualification Status	Radiation Hardening	Reach Compliance Code	REACH SVHC	Reflow Temperature-Max (s)	Rise Time	Risk Rank	RoHS	Rohs Code	RoHS Status	Series	Surface Mount	Terminal Finish	Terminal Form	Terminal Position	Termination	Test Current	Test Voltage	Threshold Voltage	Time@Peak Reflow Temperature-Max (s)	Transistor Application	Transistor Element Material	Transistor Polarity	Transistor Type	Turn Off Delay Time	Turn On Delay Time	Type	Unit Weight	Usage Level	Vds - Drain-Source Breakdown Voltage	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Voltage - Rated DC	Voltage - Test	Voltage Rated	Voltage, Rating	Weight	Width
ARF476FL Microchip Technology	2466	-	-		HIGH VOLTAGE	-	ARF476	-	-	N	-	2 N-Channel (Dual) Common Source	-	10 A	10	15 mA	10 A	10A	-	10 A	-	500 V	500 V	-	EAR99	-	-	1	4 ns	-	METAL-OXIDE SEMICONDUCTOR	3 mS	128MHz	15 dB	30 V	-	-	VERY HIGH FREQUENCY BAND	-	10 A	MICROSEMI CORP	-	-	R-XDFM-F8	-	Lead Free	-	Production (Last Updated: 2 months ago)	ARF476FL	150 MHz	175 u00b0C	910 W	+ 175 C	Microchip Technology	-55 u00b0C	- 55 C	-	Screw	Flange Mount	-	-	-	2	-	8	8	-	150 MHz	ENHANCEMENT MODE	-	-	- 55 C to + 175 C	175 u00b0C	900 W	-	Tray	-	UNSPECIFIED	RECTANGULAR	FLANGE MOUNT	Bulk	Active	-	No	910 W	NOT SPECIFIED	-	N-CHANNEL	900W	910	-	Active	-	Not Qualified	-	compliant	-	NOT SPECIFIED	4.1 ns	2.27	Details	Yes	-	-	YES	-	FLAT	DUAL	-	15 mA	150 V	-	-	AMPLIFIER	SILICON	N-Channel	-	12 ns	5.1 ns	RF Power MOSFET	0.462535 oz	-	500 V	30 V	3.3 V	-	150 V	500 V	500 V	-	-
ATF-35143-TR1G Broadcom Limited	-	-	-		-	ATF-35143	-	-	SOURCE	-	-	SINGLE	Tin	80mA	-	15mA	80mA	-	-	-	-	5.5V	-	5.5V	EAR99	-	6 Weeks	-	-	-	HIGH ELECTRON MOBILITY	-	2GHz	18dB	-5V	-	-	-	-	-	-	-	-	-	e3	Lead Free	-	-	-	-	160u00b0C	300mW	-	-	-65u00b0C	-	1 (Unlimited)	Surface Mount	-	0.4dB	-	-5 V	1	-	4	-	4	-	ENHANCEMENT MODE	-	-	-	-	-	-	-	SC-82A, SOT-343	-	-	-	Tape & Reel (TR)	-	Obsolete	-	-	260	-	N-CHANNEL	10dBm	300mW	-	-	2005	-	No	-	No SVHC	-	-	-	-	-	RoHS Compliant	-	-	-	GULL WING	DUAL	SMD/SMT	-	-	-	-	AMPLIFIER	-	-	pHEMT FET	-	-	-	-	-	-	-	-	5.5V	2V	-	-	-	-
ATF-501P8-BLK Broadcom Limited	-	-	-		-	-	-	-	SOURCE	-	-	SINGLE	Tin	1A	-	-	1A	-	1A	-	-	4.5V	7V	-	EAR99	-	6 Weeks	-	-	-	HIGH ELECTRON MOBILITY	-	2GHz	15dB	800mV	-	-	-	-	-	-	-	MO-229	-	e3	Lead Free	-	-	-	-	150u00b0C	3.5W	-	-	-65u00b0C	-	1 (Unlimited)	Surface Mount	-	1dB	280mA	-	1	-	8	-	8	-	ENHANCEMENT MODE	-	-	-	-	-	-	-	8-WFDFN Exposed Pad	-	-	-	Bulk	-	Obsolete	-	-	260	-	N-CHANNEL	29dBm	3.5W	-	-	2014	-	No	-	Unknown	-	-	-	-	-	RoHS Compliant	-	-	-	-	DUAL	-	-	-	-	-	AMPLIFIER	-	-	E-pHEMT	-	-	-	-	-	-	-	-	4.5V	-	-	-	-	-
ATF-55143-TR1G Broadcom Limited	-	-	-		-	ATF-55143	-	-	SOURCE	-	-	SINGLE	Tin	100mA	-	10mA	100mA	-	0.1A	-	-	2.7V	5V	2.7V	EAR99	-	6 Weeks	-	-	-	HIGH ELECTRON MOBILITY	-	2GHz	17.7dB	1V	-	1.2mm	-	-	-	-	-	-	-	e3	Lead Free	-	-	-	-	150u00b0C	270mW	-	-	-65u00b0C	-	1 (Unlimited)	Surface Mount	-	0.6dB	-	370 mV	1	-	4	-	4	-	ENHANCEMENT MODE	-	-	-	-	-	-	-	SC-82A, SOT-343	-	-	-	Tape & Reel (TR)	-	Obsolete	-	-	260	-	N-CHANNEL	14.4dBm	270mW	-	-	2005	-	No	-	No SVHC	-	-	-	-	-	RoHS Compliant	-	-	-	GULL WING	DUAL	SMD/SMT	-	-	370mV	-	AMPLIFIER	-	-	E-pHEMT	-	-	-	-	-	-	-	-	5V	-	-	-	-	-
ATF-58143-BLKG Broadcom Limited	-	-	-		-	ATF-58143	-	-	SOURCE	-	-	SINGLE	Tin	500mA	-	-	100mA	-	0.1A	-	-	3V	5V	-	EAR99	-	6 Weeks	-	-	-	HIGH ELECTRON MOBILITY	-	2GHz	16.5dB	1V	-	1mm	-	-	-	-	-	-	-	e3	Lead Free	2.25mm	-	-	-	150u00b0C	500mW	-	-	-65u00b0C	-	1 (Unlimited)	Surface Mount	-	0.5dB	30mA	-	1	-	4	-	4	-	ENHANCEMENT MODE	3V	-	-	-	-	19 dBm	-	SC-82A, SOT-343	-	-	-	Strip	-	Obsolete	-	-	260	-	N-CHANNEL	-	500mW	-	-	2005	-	No	-	No SVHC	-	-	-	-	-	RoHS Compliant	-	-	-	GULL WING	DUAL	-	-	-	-	-	AMPLIFIER	-	-	pHEMT FET	-	-	-	-	-	-	-	-	3V	-	-	-	-	1.35mm
BF2040WH6814XTSA1 Infineon Technologies	-	-	-		-	BF2040	-	-	SOURCE	-	-	SINGLE	Tin	40mA	-	15mA	40mA	-	-	-	-	-	-	-	EAR99	-	6 Weeks	-	-	-	METAL-OXIDE SEMICONDUCTOR	-	800MHz	23dB	7V	Halogen Free	-	-	-	-	-	-	-	-	e3	Lead Free	-	-	-	-	150u00b0C	200mW	-	-	-55u00b0C	-	1 (Unlimited)	Surface Mount	-	1.6dB	-	-	1	-	4	-	4	-	DUAL GATE, DEPLETION MODE	-	-	-	-	-	-	-	SC-82A, SOT-343	-	-	-	Tape & Reel (TR)	-	Obsolete	-	-	-	-	-	-	-	-	-	2007	-	No	-	-	-	-	-	-	-	RoHS Compliant	-	-	-	GULL WING	DUAL	-	-	-	-	-	AMPLIFIER	-	-	N-Channel	-	-	-	-	-	-	-	-	-	5V	8V	-	-	-
BF245A ON Semiconductor	7200	-	-	-	-	BF245	-	-30V	-	-	-	-	-	6.5mA	-	-	10mA	100mA	0.1A	-	30V	15V	-	-	EAR99	Single	-	-	-	-	JUNCTION	-	-	-	30V	-	5.33mm	ULTRA HIGH FREQUENCY B	8541.21.00.75	-	-	-	-	-	e0	Lead Free	5.2mm	OBSOLETE (Last Updated: 6 days ago)	-	-	150u00b0C	350mW	-	-	-55u00b0C	-	1 (Unlimited)	Through Hole	-	-	-	-	1	-	3	-	3	-	DEPLETION MODE	-	-	-	-	-	-	-	TO-226-3, TO-92-3 (TO-226AA)	-	-	-	Bulk	-	Obsolete	no	-	240	3	-	-	350mW	-	-	2003	Not Qualified	-	not_compliant	No SVHC	-	-	-	-	-	Non-RoHS Compliant	-	-	Tin/Lead (Sn/Pb)	-	BOTTOM	Through Hole	-	-	-	30	AMPLIFIER	-	-	N-Channel JFET	-	-	-	-	-	-	-	-	30V	-	-	-	200mg	4.19mm
BF245B ON Semiconductor	36000	-	-	-	-	BF245	-	-30V	-	-	-	-	-	15mA	-	-	10mA	100mA	0.1A	-	30V	15V	-	-	EAR99	Single	-	-	-	-	JUNCTION	-	-	-	-30V	-	4.58mm	ULTRA HIGH FREQUENCY B	8541.21.00.75	-	-	-	-	-	e0	Lead Free	4.58mm	LAST SHIPMENTS (Last Updated: 1 week ago)	-	-	150u00b0C	350mW	-	-	-55u00b0C	-	1 (Unlimited)	Through Hole	-	-	-	-	1	-	3	-	3	-	DEPLETION MODE	-	-	-	-	-	-	-	TO-226-3, TO-92-3 (TO-226AA)	-	-	-	Bulk	-	Obsolete	no	-	240	3	-	-	350mW	-	-	2009	Not Qualified	-	not_compliant	-	-	-	-	-	-	Non-RoHS Compliant	-	-	Tin/Lead (Sn/Pb)	-	BOTTOM	-	-	-	-	30	AMPLIFIER	-	-	N-Channel JFET	-	-	-	-	-	-	-	-	30V	-	-	-	200mg	3.86mm
BF245C ON Semiconductor	8000	-	-		-	BF245	-	-30V	-	-	-	-	-	25mA	-	-	25mA	-	0.1A	-	-	15V	-	-	EAR99	Single	-	-	-	-	JUNCTION	-	-	-	-30V	-	-	ULTRA HIGH FREQUENCY B	8541.21.00.75	-	-	-	-	-	-	Lead Free	-	-	-	-	150u00b0C	350mW	-	-	-55u00b0C	-	1 (Unlimited)	Through Hole	-	-	-	-	1	-	3	-	3	-	DEPLETION MODE	-	-	-	-	-	-	-	TO-226-3, TO-92-3 (TO-226AA)	-	-	-	Bulk	-	Obsolete	-	-	-	3	-	-	350mW	-	-	2012	Not Qualified	-	-	No SVHC	-	-	-	-	-	RoHS Compliant	-	-	-	-	BOTTOM	Through Hole	-	-	-	-	AMPLIFIER	-	-	N-Channel JFET	-	-	-	-	-	-	-	-	30V	-	-	-	200mg	-
BF256B ON Semiconductor	10000	-	-		-	BF256	-	-	-	-	-	-	Copper, Silver, Tin	13mA	-	-	13mA	-	-	-	-	30V	-	-	EAR99	Single	6 Weeks	-	-	-	JUNCTION	-	-	-	-30V	-	4.58mm	ULTRA HIGH FREQUENCY B	8541.21.00.95	-	-	-	-	-	e3	Lead Free	4.58mm	ACTIVE (Last Updated: 2 days ago)	-	-	150u00b0C	350mW	-	-	-55u00b0C	-	1 (Unlimited)	Through Hole	-	-	-	-	1	-	3	-	3	-	DEPLETION MODE	-	-	-	-	-	-	-	TO-226-3, TO-92-3 (TO-226AA)	-	-	-	Bulk	-	Active	yes	-	-	-	-	-	350mW	-	-	2015	-	No	-	No SVHC	-	-	-	-	-	ROHS3 Compliant	-	-	Tin (Sn)	-	BOTTOM	-	-	-	-	-	AMPLIFIER	-	-	N-Channel JFET	-	-	-	-	-	-	-	-	30V	-	-	-	200mg	3.86mm
BF5030WH6327XTSA1 Infineon Technologies	-	-	-		-	BF5030	-	-	-	-	-	-	Tin	25mA	-	10mA	25mA	-	-	-	-	-	-	-	EAR99	-	6 Weeks	-	-	-	-	-	800MHz	24dB	6V	Halogen Free	-	-	-	-	-	-	-	-	e3	Lead Free	-	-	-	-	150u00b0C	200mW	-	-	-55u00b0C	-	1 (Unlimited)	Surface Mount	-	1.3dB	-	-	1	-	4	-	-	-	-	-	-	-	-	-	-	-	SC-82A, SOT-343	-	-	-	Tape & Reel (TR)	-	Obsolete	-	-	-	-	-	-	-	-	-	2005	-	No	-	-	-	-	-	-	-	RoHS Compliant	-	-	-	-	-	-	-	-	-	-	-	-	-	N-Channel	-	-	-	-	-	-	-	-	-	3V	8V	-	-	-
BF556A,215 NXP USA Inc.	3039	-	-		-	BF556	-	-	-	-	-	SINGLE	-	-	-	-	-	7mA	-	-	-	-	30V	-	-	-	8 Weeks	-	-	-	JUNCTION	-	-	-	-	-	-	VERY HIGH FREQUENCY B	8541.21.00.75	-	-	-	TO-236AB	R-PDSO-G3	e3	-	-	-	-	-	-	-	-	-	-	-	1 (Unlimited)	-	-	-	-	-	1	-	-	-	3	-	DEPLETION MODE	-	150u00b0C	-	-	-	-	-	TO-236-3, SC-59, SOT-23-3	-	-	-	Tape & Reel (TR)	-	Obsolete	-	-	260	3	-	-	-	0.25W	-	2001	Not Qualified	-	-	-	-	-	-	-	-	ROHS3 Compliant	-	YES	TIN	GULL WING	DUAL	-	-	-	-	NOT SPECIFIED	AMPLIFIER	SILICON	-	N-Channel JFET	-	-	-	-	-	-	-	-	-	-	30V	-	-	-
BF862,215 NXP USA Inc.	-	-	-		-	BF862	-	-	-	-	-	SINGLE	-	-	-	-	-	25mA	0.04A	-	-	-	20V	-	EAR99	-	8 Weeks	-	-	-	JUNCTION	-	-	-	-	-	-	-	8541.21.00.75	-	-	-	TO-236AB	R-PDSO-G3	e3	-	-	-	-	-	-	-	-	-	-	-	1 (Unlimited)	-	-	-	-	-	1	-	-	-	3	-	DEPLETION MODE	-	150u00b0C	-	-	-	-	-	TO-236-3, SC-59, SOT-23-3	-	-	-	Tape & Reel (TR)	-	Obsolete	-	-	260	3	-	-	-	0.225W	-	1999	Not Qualified	-	-	-	-	-	-	-	-	ROHS3 Compliant	-	YES	Tin (Sn)	GULL WING	DUAL	-	-	-	-	NOT SPECIFIED	AMPLIFIER	SILICON	-	N-Channel JFET	-	-	-	-	-	-	-	-	-	-	20V	-	-	-
BF998E6327HTSA1 Infineon Technologies	1727	-	-		-	BF998	-	-	SOURCE	-	-	SINGLE	Tin	30mA	-	10mA	30mA	-	0.03A	-	-	-	-	-	EAR99	-	4 Weeks	-	-	-	METAL-OXIDE SEMICONDUCTOR	-	45MHz	28dB	8V	Not Halogen Free	1mm	-	-	-	-	1.2pF	-	-	e3	Lead Free	2.9mm	-	-	-	150u00b0C	200mW	-	-	-55u00b0C	-	1 (Unlimited)	Surface Mount	-	2.8dB	-	-	1	1	4	-	4	-	DUAL GATE, DEPLETION MODE	-	-	-	-	-	-	-	TO-253-4, TO-253AA	-	-	-	Tape & Reel (TR)	-	Not For New Designs	yes	-	-	4	-	-	-	-	-	2001	-	No	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	-	GULL WING	DUAL	-	-	-	-	-	-	-	-	N-Channel	-	-	-	-	Military grade	-	-	-	12V	-	-	-	-	1.3mm
BF999E6327HTSA1 Infineon Technologies	6842	-	-		-	-	-	-	-	-	-	SINGLE	Tin	30mA	-	10mA	30mA	-	-	-	-	-	-	-	EAR99	-	6 Weeks	-	-	-	METAL-OXIDE SEMICONDUCTOR	-	45MHz	27dB	12V	Not Halogen Free	-	-	-	-	-	-	-	-	e3	Lead Free	-	-	-	-	150u00b0C	200mW	-	-	-55u00b0C	-	1 (Unlimited)	Surface Mount	-	2.1dB	-	-	1	1	3	-	3	-	DEPLETION MODE	-	-	-	-	-	-	-	TO-236-3, SC-59, SOT-23-3	-	-	-	Tape & Reel (TR)	-	Not For New Designs	yes	-	-	-	-	-	-	-	-	2007	-	No	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	-	GULL WING	DUAL	-	-	-	-	-	-	-	-	N-Channel	-	-	-	-	Military grade	-	-	-	20V	10V	-	-	-	-
BG3130H6327XTSA1 Infineon Technologies	7824	-	-		LOW NOISE	BG3130	-	-	-	-	-	-	Tin	25mA	-	14mA	25mA	-	-	-	-	-	-	-	EAR99	-	4 Weeks	-	-	-	METAL-OXIDE SEMICONDUCTOR	-	800MHz	24dB	6V	Halogen Free	-	-	-	-	-	-	-	-	e3	Lead Free	-	-	-	-	150u00b0C	200mW	-	-	-55u00b0C	-	1 (Unlimited)	Surface Mount	-	1.3dB	-	-	2	-	6	-	6	-	DUAL GATE, DEPLETION MODE	-	-	-	-	-	-	-	6-VSSOP, SC-88, SOT-363	-	-	-	Tape & Reel (TR)	-	Obsolete	-	-	NOT SPECIFIED	-	-	-	-	-	-	2007	-	-	-	-	-	-	-	-	-	RoHS Compliant	-	-	-	GULL WING	-	-	-	-	-	NOT SPECIFIED	AMPLIFIER	-	-	2 N-Channel (Dual)	-	-	-	-	-	-	-	-	-	5V	8V	-	-	-
CPH3424-TL-E onsemi	14562	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	onsemi	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FC18G-TL onsemi	6033	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	onsemi	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	Non-Compliant	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FSS132-TL-E onsemi	40037	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	onsemi	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
J310 ON Semiconductor	50	-	-	-	-	J310	-	-25V	-	-	Orange	-	-	60mA	-	10mA	10mA	-	-	-	25V	25V	-	-	-	Single	-	-	-	2.5 pF	JUNCTION	-	100MHz	16dB	-25V	-	5.33mm	-	8541.21.00.75	-	-	-	-	-	e0	Lead Free	5.2mm	LAST SHIPMENTS (Last Updated: 20 hours ago)	-	-	150u00b0C	625mW	-	-	-55u00b0C	-	1 (Unlimited)	Through Hole	-	3 dB	-	-	1	-	3	-	3	-	DEPLETION MODE	-	-	-	-	-	-	-	TO-226-3, TO-92-3 (TO-226AA)	-	-	-	Bulk	-	Obsolete	no	-	240	3	-	-	350mW	-	-	-	Not Qualified	-	not_compliant	No SVHC	-	-	-	-	-	Non-RoHS Compliant	-	-	Tin/Lead (Sn/Pb)	-	BOTTOM	Through Hole	-	-	-	30	AMPLIFIER	-	-	N-Channel JFET	-	-	-	-	-	-	-	-	25V	10V	-	-	201mg	4.19mm

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