RF MOSFETs Transistors – Cybertant Technology

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Case Connection
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Configuration
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DS Breakdown Voltage-Min
125V (1)

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Height
3.5mm (6)

880u03bcm (1)
HTS Code
8541.29.00.75 (6)
Input Capacitance
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JESD-30 Code
R-CDFM-F4 (2)

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JESD-609 Code
e3 (15)
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ACTIVE (Last Updated: 8 months ago) (6)
Max Operating Temperature
165u00b0C (10)

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Max Output Power
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-65u00b0C (13)
Moisture Sensitivity Level (MSL)
Not Applicable (4)

3 (168 Hours) (16)
Mount
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5 V (1)
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1 (16)
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Operating Mode
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150u00b0C (2)

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Part Status
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Peak Reflow Temperature (Cel)
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250 (9)
Pin Count
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Polarity/Channel Type
N-CHANNEL (19)
Power - Output
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Power Dissipation
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Power Dissipation-Max (Abs)
1300W (1)

61.4W (2)
Power Gain
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16.5dB (1)
Published
2012 (1)

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2009 (3)
Qualification Status
Not Qualified (8)
Radiation Hardening
No (10)
Reach Compliance Code
not_compliant (4)
REACH SVHC
No SVHC (3)
RoHS Status
ROHS3 Compliant (20)
Surface Mount
YES (5)
Terminal Finish
Matte Tin (Sn) (1)

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Matte Tin (Sn) - annealed (5)
Terminal Form
FLAT (3)

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Terminal Position
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Termination
SMD/SMT (1)
Time@Peak Reflow Temperature-Max (s)
40 (7)

NOT SPECIFIED (1)

30 (12)
Transistor Application
AMPLIFIER (18)
Transistor Element Material
SILICON (5)
Transistor Type
LDMOS (17)

LDMOS (Dual) (3)
Usage Level
Military grade (6)

Automotive grade (1)
Voltage - Rated DC
7V (1)

3.1V (1)

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Voltage - Test
50V (3)

65V (1)

28V (6)

13.6V (1)

7.5V (2)

12.5V (7)
Voltage Rated
133V (2)

130V (1)

182V (1)

68V (3)
Width
9.4mm (6)

5mm (1)

Categories

RF MOSFETs Transistors

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100 Results

Product	Inventory	Pricing(USD)	Datasheet	Additional Feature	Base Part Number	Case Connection	Configuration	Contact Plating	Continuous Drain Current (ID)	Current - Test	Current Rating	Current Rating (Amps)	Drain Current-Max (Abs) (ID)	Drain to Source Breakdown Voltage	Drain to Source Resistance	Drain to Source Voltage (Vdss)	DS Breakdown Voltage-Min	Dual Supply Voltage	ECCN Code	Element Configuration	Factory Lead Time	FET Technology	Frequency	Gain	Gate to Source Voltage (Vgs)	Height	HTS Code	Input Capacitance	JESD-30 Code	JESD-609 Code	Lead Free	Length	Lifecycle Status	Max Operating Temperature	Max Output Power	Max Power Dissipation	Min Breakdown Voltage	Min Operating Temperature	Moisture Sensitivity Level (MSL)	Mount	Nominal Vgs	Number of Elements	Number of Pins	Number of Terminations	Operating Mode	Operating Temperature (Max.)	Package / Case	Packaging	Part Status	Peak Reflow Temperature (Cel)	Pin Count	Polarity/Channel Type	Power - Output	Power Dissipation	Power Dissipation-Max (Abs)	Power Gain	Published	Qualification Status	Radiation Hardening	Reach Compliance Code	REACH SVHC	RoHS Status	Surface Mount	Terminal Finish	Terminal Form	Terminal Position	Termination	Time@Peak Reflow Temperature-Max (s)	Transistor Application	Transistor Element Material	Transistor Type	Usage Level	Voltage - Rated DC	Voltage - Test	Voltage Rated	Width
MRFE6VP100HR5 NXP USA Inc.	2617	-	-	-	MRFE6VP100	-	-	-	-	100mA	-	-	-	-	-	-	-	-	EAR99	-	10 Weeks	METAL-OXIDE SEMICONDUCTOR	512MHz	26dB	-	-	8541.29.00.75	-	-	-	-	-	-	-	-	-	-	-	Not Applicable	-	-	-	-	-	-	150u00b0C	NI780-4	Tape & Reel (TR)	Active	260	-	N-CHANNEL	100W	-	-	-	2012	-	-	-	-	ROHS3 Compliant	-	-	-	-	-	40	-	-	LDMOS	-	-	50V	133V	-
MRFE6VP61K25HR6 NXP USA Inc.	2814	-	-	-	MRFE6VP61K25	SOURCE	COMMON SOURCE, 2 ELEMENTS	-	-	100mA	-	-	-	-	-	-	125V	-	EAR99	-	10 Weeks	METAL-OXIDE SEMICONDUCTOR	230MHz	24dB	-	-	8541.29.00.75	-	R-CDFM-F4	-	-	-	-	-	-	-	-	-	Not Applicable	-	-	2	-	4	ENHANCEMENT MODE	225u00b0C	NI-1230	Tape & Reel (TR)	Active	260	-	N-CHANNEL	1250W	-	1300W	-	2006	Not Qualified	-	-	-	ROHS3 Compliant	YES	-	FLAT	-	-	40	AMPLIFIER	SILICON	LDMOS (Dual)	Military grade	-	50V	133V	-
MRFE6VP6300HR5 NXP USA Inc.	2003	-	-	-	MRFE6VP6300	SOURCE	COMMON SOURCE, 2 ELEMENTS	-	-	100mA	-	-	-	-	-	-	130V	-	EAR99	-	10 Weeks	METAL-OXIDE SEMICONDUCTOR	230MHz	26.5dB	-	-	8541.29.00.75	-	R-CDFM-F4	-	-	-	-	-	-	-	-	-	Not Applicable	-	-	2	-	4	ENHANCEMENT MODE	225u00b0C	NI780-4	Tape & Reel (TR)	Active	260	-	N-CHANNEL	300W	-	-	-	2006	Not Qualified	-	-	-	ROHS3 Compliant	YES	-	FLAT	-	-	40	AMPLIFIER	SILICON	LDMOS (Dual)	Military grade	-	50V	130V	-
MRFX1K80HR5 NXP USA Inc.	2850	-	-	-	-	-	-	-	-	200mA	-	10u03bcA	-	-	-	-	-	-	EAR99	-	10 Weeks	-	1.8MHz~470MHz	24dB	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Not Applicable	-	-	-	-	-	-	-	SOT-979A	Cut Tape (CT)	Active	260	-	-	1800W	-	-	-	2006	-	-	-	-	ROHS3 Compliant	-	-	-	-	-	40	-	-	LDMOS (Dual)	Automotive grade	-	65V	182V	-
MW6S004NT1 NXP USA Inc.	5000	-	-	-	MW6S004	SOURCE	SINGLE	-	-	50mA	-	-	-	-	-	-	68V	-	EAR99	-	10 Weeks	METAL-OXIDE SEMICONDUCTOR	1.96GHz	18dB	-	-	8541.29.00.75	-	R-PQSO-N4	e3	-	-	-	-	-	-	-	-	3 (168 Hours)	-	-	1	-	4	ENHANCEMENT MODE	150u00b0C	PLD-1.5	Tape & Reel (TR)	Active	260	-	N-CHANNEL	4W	-	-	-	2009	Not Qualified	-	-	-	ROHS3 Compliant	YES	Matte Tin (Sn)	NO LEAD	QUAD	-	40	AMPLIFIER	SILICON	LDMOS	Military grade	-	28V	68V	-
MW6S010GNR1 NXP USA Inc.	2539	-	-	-	MW6S010	SOURCE	SINGLE	-	-	125mA	-	-	-	-	-	-	68V	-	EAR99	-	10 Weeks	METAL-OXIDE SEMICONDUCTOR	960MHz	18dB	-	-	8541.29.00.75	-	R-PDSO-G2	e3	-	-	-	-	-	-	-	-	3 (168 Hours)	-	-	1	-	2	ENHANCEMENT MODE	225u00b0C	TO-270BA	Tape & Reel (TR)	Active	260	-	N-CHANNEL	10W	-	61.4W	-	2009	Not Qualified	-	not_compliant	-	ROHS3 Compliant	YES	Tin (Sn)	GULL WING	DUAL	-	40	AMPLIFIER	SILICON	LDMOS	Military grade	-	28V	68V	-
MW6S010NR1 NXP USA Inc.	687	-	-	-	MW6S010	SOURCE	SINGLE	-	-	125mA	-	-	-	-	-	-	68V	-	EAR99	-	10 Weeks	METAL-OXIDE SEMICONDUCTOR	960MHz	18dB	-	-	8541.29.00.75	-	R-PDFM-F2	e3	-	-	-	-	-	-	-	-	3 (168 Hours)	-	-	1	-	2	ENHANCEMENT MODE	225u00b0C	TO-270AA	Tape & Reel (TR)	Not For New Designs	260	-	N-CHANNEL	10W	-	61.4W	-	2009	Not Qualified	-	not_compliant	-	ROHS3 Compliant	YES	Tin (Sn)	FLAT	DUAL	-	40	AMPLIFIER	SILICON	LDMOS	Military grade	-	28V	68V	-
PD20010-E STMicroelectronics	-	-	-	ESD PROTECTION, HIGH RELIABILITY	PD20010	SOURCE	-	-	5A	150mA	5A	-	5A	40V	-	40V	-	-	EAR99	Single	25 Weeks	METAL-OXIDE SEMICONDUCTOR	2GHz	11dB	15V	-	-	-	R-PDSO-G2	-	-	-	ACTIVE (Last Updated: 7 months ago)	165u00b0C	15W	59W	-	-65u00b0C	3 (168 Hours)	Surface Mount	-	1	3	2	ENHANCEMENT MODE	-	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	Tube	Active	NOT SPECIFIED	10	N-CHANNEL	10W	59W	-	-	-	Not Qualified	-	-	-	ROHS3 Compliant	-	-	GULL WING	DUAL	-	NOT SPECIFIED	AMPLIFIER	-	LDMOS	-	-	13.6V	-	-
PD54003L-E STMicroelectronics	2313	-	-	HIGH RELIABILITY	PD54003	SOURCE	-	-	4A	50mA	4A	-	4A	-	-	25V	-	-	EAR99	Single	-	METAL-OXIDE SEMICONDUCTOR	500MHz	20dB	15V	-	-	-	S-PQCC-N5	e3	Lead Free	-	-	150u00b0C	3W	19.5W	-	-65u00b0C	3 (168 Hours)	Surface Mount	-	1	14	5	ENHANCEMENT MODE	-	8-PowerVDFN	Tape & Reel (TR)	Obsolete	260	5	N-CHANNEL	-	-	-	-	-	-	No	-	-	ROHS3 Compliant	-	MATTE TIN	-	QUAD	-	30	AMPLIFIER	-	LDMOS	-	7V	7.5V	-	-
PD54008L-E STMicroelectronics	6	-	-	HIGH RELIABILITY	PD54008	SOURCE	-	-	5A	200mA	5A	-	5A	25V	-	25V	-	-	EAR99	Single	12 Weeks	METAL-OXIDE SEMICONDUCTOR	500MHz	-	15V	-	-	-	S-PQCC-N5	e3	Lead Free	-	ACTIVE (Last Updated: 7 months ago)	150u00b0C	8W	26.7W	-	-65u00b0C	3 (168 Hours)	Surface Mount	-	1	8	5	ENHANCEMENT MODE	-	8-PowerVDFN	Tape & Reel (TR)	Active	260	14	N-CHANNEL	-	26.7W	-	15dB	-	-	No	-	-	ROHS3 Compliant	-	MATTE TIN	-	QUAD	-	30	AMPLIFIER	-	LDMOS	-	3.1V	7.5V	-	-
PD55003-E STMicroelectronics	6000	-	-	HIGH RELIABILITY	PD55003	SOURCE	-	-	2.5A	50mA	2.5A	-	-	40V	-	40V	-	-	EAR99	Single	25 Weeks	METAL-OXIDE SEMICONDUCTOR	500MHz	-	20V	3.5mm	-	-	R-PDSO-G2	e3	Lead Free	7.5mm	ACTIVE (Last Updated: 8 months ago)	165u00b0C	3W	31.7W	-	-65u00b0C	3 (168 Hours)	Surface Mount	-	1	3	2	ENHANCEMENT MODE	-	PowerSO-10 Exposed Bottom Pad	Tube	Active	250	10	N-CHANNEL	-	31.7W	-	17dB	-	-	No	-	No SVHC	ROHS3 Compliant	-	Matte Tin (Sn) - annealed	GULL WING	DUAL	-	30	AMPLIFIER	-	LDMOS	-	40V	12.5V	-	9.4mm
PD55003L-E STMicroelectronics	2302	-	-	HIGH RELIABILITY	PD55003	SOURCE	-	-	2.5A	50mA	2.5A	-	-	-	-	40V	-	40V	EAR99	Single	11 Weeks	METAL-OXIDE SEMICONDUCTOR	500MHz	19dB	15V	880u03bcm	-	34pF	S-PQCC-N5	e3	Lead Free	5mm	ACTIVE (Last Updated: 7 months ago)	150u00b0C	3W	14W	-	-65u00b0C	3 (168 Hours)	Surface Mount	5 V	1	8	5	ENHANCEMENT MODE	-	8-PowerVDFN	Tape & Reel (TR)	Active	260	5	N-CHANNEL	-	-	-	-	-	-	No	-	No SVHC	ROHS3 Compliant	-	MATTE TIN	-	QUAD	SMD/SMT	30	AMPLIFIER	-	LDMOS	-	12V	12.5V	-	5mm
PD55003TR-E STMicroelectronics	1350	-	-	HIGH RELIABILITY	PD55003	SOURCE	-	-	2.5A	50mA	2.5A	-	-	40V	-	40V	-	-	EAR99	Single	25 Weeks	METAL-OXIDE SEMICONDUCTOR	500MHz	17dB	20V	-	-	-	R-PDSO-G2	e3	-	-	-	165u00b0C	3W	31.7W	-	-65u00b0C	3 (168 Hours)	Surface Mount	-	1	4	2	ENHANCEMENT MODE	-	PowerSO-10 Exposed Bottom Pad	Tape & Reel (TR)	Active	250	10	N-CHANNEL	-	31.7W	-	-	-	-	No	-	-	ROHS3 Compliant	-	Matte Tin (Sn) - annealed	GULL WING	DUAL	-	30	AMPLIFIER	-	LDMOS	-	-	12.5V	-	-
PD55008-E STMicroelectronics	5000	-	-	HIGH RELIABILITY	PD55008	SOURCE	-	-	4A	150mA	4A	-	4A	40V	-	40V	-	-	EAR99	Single	25 Weeks	METAL-OXIDE SEMICONDUCTOR	500MHz	-	20V	3.5mm	-	58pF	R-PDSO-G2	e3	Lead Free	7.5mm	ACTIVE (Last Updated: 8 months ago)	165u00b0C	8W	52.8W	40V	-65u00b0C	3 (168 Hours)	Surface Mount	-	1	3	2	ENHANCEMENT MODE	-	PowerSO-10 Exposed Bottom Pad	Tube	Active	250	10	N-CHANNEL	-	52.8W	-	17dB	-	-	No	-	-	ROHS3 Compliant	-	Matte Tin (Sn) - annealed	GULL WING	DUAL	-	30	AMPLIFIER	-	LDMOS	Military grade	40V	12.5V	-	9.4mm
PD55008TR-E STMicroelectronics	1200	-	-	HIGH RELIABILITY	PD55008	SOURCE	-	-	4A	150mA	4A	-	4A	40V	-	40V	-	-	EAR99	Single	25 Weeks	METAL-OXIDE SEMICONDUCTOR	500MHz	17dB	20V	-	-	-	R-PDSO-G2	e3	-	-	-	165u00b0C	8W	52.8W	-	-65u00b0C	3 (168 Hours)	Surface Mount	-	1	3	2	ENHANCEMENT MODE	-	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	Tape & Reel (TR)	Active	250	10	N-CHANNEL	-	52.8W	-	-	-	-	No	-	-	ROHS3 Compliant	-	Matte Tin (Sn) - annealed	GULL WING	DUAL	-	30	AMPLIFIER	-	LDMOS	-	-	12.5V	-	-
PD55015-E STMicroelectronics	3200	-	-	HIGH RELIABILITY	PD55015	SOURCE	-	-	5A	150mA	5A	-	5A	40V	-	40V	-	-	EAR99	Single	25 Weeks	METAL-OXIDE SEMICONDUCTOR	500MHz	-	20V	3.5mm	-	89pF	-	e3	Lead Free	7.5mm	ACTIVE (Last Updated: 8 months ago)	165u00b0C	15W	73W	40V	-65u00b0C	3 (168 Hours)	Surface Mount	-	1	2	2	ENHANCEMENT MODE	-	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	Tube	Active	250	10	N-CHANNEL	-	73W	-	14dB	-	-	No	-	No SVHC	ROHS3 Compliant	-	Matte Tin (Sn) - annealed	GULL WING	DUAL	-	30	AMPLIFIER	-	LDMOS	-	-	12.5V	-	9.4mm
PD55025-E STMicroelectronics	776	-	-	HIGH RELIABILITY	PD55025	SOURCE	-	-	7A	200mA	7A	-	7A	-	-	40V	-	-	EAR99	Single	25 Weeks	METAL-OXIDE SEMICONDUCTOR	500MHz	14.5dB	20V	3.5mm	-	-	R-PDSO-G2	e3	Lead Free	7.5mm	ACTIVE (Last Updated: 8 months ago)	165u00b0C	25W	79W	40V	-65u00b0C	3 (168 Hours)	Surface Mount	-	1	3	2	ENHANCEMENT MODE	-	PowerSO-10 Exposed Bottom Pad	Tube	Active	250	10	N-CHANNEL	-	-	-	-	-	Not Qualified	-	not_compliant	-	ROHS3 Compliant	-	MATTE TIN	GULL WING	DUAL	-	30	AMPLIFIER	-	LDMOS	-	40V	12.5V	-	9.4mm
PD57018-E STMicroelectronics	1200	-	-	HIGH RELIABILITY	PD57018	SOURCE	-	Tin	2.5A	100mA	2.5A	-	-	65V	760mOhm	65V	-	-	EAR99	Single	25 Weeks	METAL-OXIDE SEMICONDUCTOR	945MHz	-	20V	3.5mm	-	-	R-PDSO-G2	e3	Lead Free	7.5mm	ACTIVE (Last Updated: 8 months ago)	165u00b0C	18W	31.7W	65V	-65u00b0C	3 (168 Hours)	Surface Mount	-	1	3	2	ENHANCEMENT MODE	-	PowerSO-10 Exposed Bottom Pad	Tube	Active	250	10	N-CHANNEL	-	31.7W	-	16.5dB	-	-	No	-	-	ROHS3 Compliant	-	-	GULL WING	DUAL	-	30	AMPLIFIER	-	LDMOS	-	65V	28V	-	9.4mm
PD57018TR-E STMicroelectronics	1200	-	-	HIGH RELIABILITY	PD57018	SOURCE	-	-	2.5A	100mA	2.5A	-	-	65V	760mOhm	65V	-	-	EAR99	Single	25 Weeks	METAL-OXIDE SEMICONDUCTOR	945MHz	16.5dB	20V	-	-	-	R-PDSO-G2	e3	-	-	-	165u00b0C	18W	31.7W	-	-65u00b0C	3 (168 Hours)	Surface Mount	-	1	3	2	ENHANCEMENT MODE	-	PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	Tape & Reel (TR)	Active	250	10	N-CHANNEL	-	31.7W	-	-	-	Not Qualified	-	not_compliant	-	ROHS3 Compliant	-	MATTE TIN	GULL WING	DUAL	-	30	AMPLIFIER	-	LDMOS	-	-	28V	-	-
PD57030-E STMicroelectronics	15	-	-	HIGH RELIABILITY	PD57030	SOURCE	-	-	4A	50mA	4A	-	4A	-	-	65V	-	-	EAR99	Single	25 Weeks	METAL-OXIDE SEMICONDUCTOR	945MHz	-	20V	3.5mm	-	-	R-PDSO-G2	e3	Lead Free	7.5mm	ACTIVE (Last Updated: 8 months ago)	165u00b0C	30W	52.8W	65V	-65u00b0C	3 (168 Hours)	Surface Mount	-	1	3	2	ENHANCEMENT MODE	-	PowerSO-10 Exposed Bottom Pad	Tube	Active	250	2	N-CHANNEL	-	52.8W	-	14dB	-	-	No	-	-	ROHS3 Compliant	-	MATTE TIN	GULL WING	DUAL	-	30	AMPLIFIER	-	LDMOS	-	65V	28V	-	9.4mm

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