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Infineon Technologies IRG4BC40SPBF
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Infineon Technologies IRG4BC40SPBF

Infineon Technologies

Manufacturer No:

IRG4BC40SPBF

Manufacturer:

Infineon Technologies

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Package:

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ECAD Model:

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Description:

In a Pack of 5, Infineon IRG4BC40SPBF IGBT, 60 A 600 V, 3-Pin TO-220AB

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In Stock : 18658

Minimum: 1 Multiples: 1

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FedEx International, 5-7 business days.

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  • Prepare productStep1:Prepare product
  • Vacuum packagingStep2:Vacuum packaging
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Infineon Technologies IRG4BC40SPBF information

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Infineon Technologies IRG4BC40SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC40SPBF.
ParameterValue
Factory Lead Time 16 Weeks
Mount Surface Mount, Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.5V
Number of Elements 1
Test Conditions 480V, 31A, 10 u03a9, 15V
Turn Off Delay Time 650 ns
Operating Temperature -55u00b0C~150u00b0C TJ
Packaging Tube
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation 160W
Terminal Position SINGLE
Element Configuration Dual
Power Dissipation 160W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 22 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.5V
Max Collector Current 60A
JEDEC-95 Code TO-220AB
Turn On Time 44 ns
Vce(on) (Max) @ Vge, Ic 1.5V @ 15V, 31A
Turn Off Time-Nom (toff) 1940 ns
Gate Charge 100nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25u00b0C 22ns/650ns
Switching Energy 450u03bcJ (on), 6.5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 570ns
Height 16.51mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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