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STMicroelectronics STGW30NC60WD
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STMicroelectronics STGW30NC60WD

STMicroelectronics

Manufacturer No:

STGW30NC60WD

Manufacturer:

STMicroelectronics

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Description:

STMICROELECTRONICS STGW30NC60WD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins

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In Stock : 1200

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STMicroelectronics STGW30NC60WD information

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STMicroelectronics STGW30NC60WD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW30NC60WD.
ParameterValue
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.1V
Number of Elements 1
Test Conditions 390V, 20A, 10 u03a9, 15V
Turn Off Delay Time 118 ns
Operating Temperature -55u00b0C~150u00b0C TJ
Packaging Tube
Series PowerMESHu2122
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 600V
Max Power Dissipation 200W
Current Rating 60A
Base Part Number STGW30
Pin Count 3
Element Configuration Single
Power Dissipation 200W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time 29.5 ns
Transistor Application POWER CONTROL
Rise Time 12ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 40 ns
JEDEC-95 Code TO-247AC
Turn On Time 42.5 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Turn Off Time-Nom (toff) 189 ns
Gate Charge 102nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25u00b0C 29.5ns/118ns
Switching Energy 305u03bcJ (on), 181u03bcJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Height 20.15mm
Length 15.75mm
Width 5.15mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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