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ON Semiconductor NGTB25N120FL2WG
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ON Semiconductor NGTB25N120FL2WG

ON Semiconductor

Manufacturer No:

NGTB25N120FL2WG

Manufacturer:

ON Semiconductor

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Description:

Trans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube

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In Stock : 2970

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FedEx International, 5-7 business days.

The following are some common countries' logistic time. transport
  • Prepare productStep1:Prepare product
  • Vacuum packagingStep2:Vacuum packaging
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ON Semiconductor NGTB25N120FL2WG information

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ON Semiconductor NGTB25N120FL2WG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NGTB25N120FL2WG.
ParameterValue
Factory Lead Time 33 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Collector-Emitter Breakdown Voltage 1.2kV
Test Conditions 600V, 25A, 10 u03a9, 15V
Operating Temperature -55u00b0C~175u00b0C TJ
Packaging Tube
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 385W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Power - Max 385W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 50A
Reverse Recovery Time 154 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 25A
IGBT Type Field Stop
Gate Charge 178nC
Current - Collector Pulsed (Icm) 100A
Td (on/off) @ 25u00b0C 87ns/179ns
Switching Energy 1.95mJ (on), 600u03bcJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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