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ON Semiconductor FGL60N100BNTDTU
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ON Semiconductor FGL60N100BNTDTU

ON Semiconductor

Manufacturer No:

FGL60N100BNTDTU

Manufacturer:

ON Semiconductor

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Package:

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Description:

Trans IGBT Chip N-CH 1KV 60A 3-Pin(3 Tab) TO-264 Rail

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ON Semiconductor FGL60N100BNTDTU information

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ON Semiconductor FGL60N100BNTDTU technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor FGL60N100BNTDTU.
ParameterValue
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Weight 6.756g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1kV
Collector-Emitter Saturation Voltage 1.5V
Number of Elements 1
Test Conditions 600V, 60A, 51 u03a9, 15V
Operating Temperature -55u00b0C~150u00b0C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Voltage - Rated DC 1kV
Max Power Dissipation 180W
Current Rating 60A
Element Configuration Single
Power Dissipation 180W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1kV
Max Collector Current 60A
Reverse Recovery Time 1.2 u03bcs
Voltage - Collector Emitter Breakdown (Max) 1000V
Turn On Time 460 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A
Turn Off Time-Nom (toff) 760 ns
IGBT Type NPT and Trench
Gate Charge 275nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25u00b0C 140ns/630ns
Height 26mm
Length 20mm
Width 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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