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ON Semiconductor FGH40T120SMD

ON Semiconductor

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FGH40T120SMD

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ON Semiconductor

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Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3 Tab) TO-247 Rail

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ON Semiconductor FGH40T120SMD technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor FGH40T120SMD.

Parameter	Value
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Collector-Emitter Breakdown Voltage	1.2kV
Collector-Emitter Saturation Voltage	1.8V
Test Conditions	600V, 40A, 10 u03a9, 15V
Turn Off Delay Time	475 ns
Operating Temperature	-55u00b0C~175u00b0C TJ
Packaging	Tube
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Max Power Dissipation	555W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Element Configuration	Single
Power Dissipation	555W
Input Type	Standard
Turn On Delay Time	40 ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	80A
Reverse Recovery Time	65 ns
Voltage - Collector Emitter Breakdown (Max)	1200V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 40A
Max Junction Temperature (Tj)	175u00b0C
Continuous Collector Current	80A
IGBT Type	Trench Field Stop
Gate Charge	370nC
Current - Collector Pulsed (Icm)	160A
Td (on/off) @ 25u00b0C	40ns/475ns
Switching Energy	2.7mJ (on), 1.1mJ (off)
Gate-Emitter Voltage-Max	25V
Gate-Emitter Thr Voltage-Max	7.5V
Height	24.75mm
Length	15.87mm
Width	4.82mm
RoHS Status	ROHS3 Compliant