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ManufacturerIXYS (26)Infineon Technologies (1)Littelfuse (4)Rohm Semiconductor (1)STMicroelectronics (2)Vishay General Semiconductor - Diodes Division (2)onsemi (8)
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Base Product NumberGT80 (1)
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Collector- Emitter Voltage VCEO Max650 V (2)
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Collector-Emitter Saturation Voltage1.6 V (1)2.02 V (1)
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ConfigurationSingle (3)Half Bridge Inverter (1)
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Continuous Collector Current at 25 C87 A (2)
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Continuous Collector Current Ic Max57 A (2)
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Current - Collector Cutoff (Max)150 u00b5A (1)100 u00b5A (1)
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Current-Collector (Ic) (Max)372 A (1)139 A (1)
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Factory Pack Quantity600 (1)30 (1)
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Gate-Emitter Leakage Current250 nA (2)
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IGBT TypeTrench (2)
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InputStandard (2)
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Input Capacitance (Cies) @ Vce4.4 nF @ 25 V (1)
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Maximum Gate Emitter Voltage20 V (2)
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Maximum Operating Temperature+ 175 C (2)
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Minimum Operating Temperature- 55 C (2)
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Mounting StylesSMD/SMT (1)Through Hole (1)
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Mounting TypeChassis Mount (2)
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NTC ThermistorNo (2)
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Operating Temperature-40u00b0C ~ 175u00b0C (TJ) (1)-40u00b0C ~ 150u00b0C (TJ) (1)
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Package / CaseHU3PAK-7 (1)TO-247-3 (1)Module (1)SOT-227-4, miniBLOC (1)
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PackagingReel (1)Tube (2)Box (1)
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Part StatusActive (2)
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Pd - Power Dissipation441 W (2)
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Power - Max789 W (1)658 W (1)
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QualificationAEC-Q101 (2)
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RoHSRoHS Compliant (2)
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SeriesFRED Ptu00ae (1)HEXFREDu00ae (1)
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Supplier Device PackageINT-A-PAK IGBT (1)SOT-227 (1)
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Unit Weight0.081836 oz (1)0.215171 oz (1)
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Vce(on) (Max) @ Vge, Ic1.32V @ 15V, 150A (1)2.55V @ 15V, 80A (1)
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Voltage - Collector Emitter Breakdown (Max)650 V (1)1200 V (1)
Attribute column
Categories
IGBTs Transistors Arrays
Product |
Inventory |
Pricing(USD) |
Quantity |
Datasheet |
RoHS |
Base Product Number |
Collector- Emitter Voltage VCEO Max |
Collector-Emitter Saturation Voltage |
Configuration |
Continuous Collector Current at 25 C |
Continuous Collector Current Ic Max |
Current - Collector Cutoff (Max) |
Current-Collector (Ic) (Max) |
Factory Pack Quantity |
Gate-Emitter Leakage Current |
IGBT Type |
Input |
Input Capacitance (Cies) @ Vce |
Maximum Gate Emitter Voltage |
Maximum Operating Temperature |
Minimum Operating Temperature |
Mounting Styles |
Mounting Type |
NTC Thermistor |
Operating Temperature |
Package / Case |
Packaging |
Part Status |
Pd - Power Dissipation |
Power - Max |
Qualification |
RoHS |
Series |
Supplier Device Package |
Unit Weight |
Vce(on) (Max) @ Vge, Ic |
Voltage - Collector Emitter Breakdown (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STGHU30M65DF2AG
STMicroelectronics |
- |
- |
|
- |
- |
650 V |
1.6 V |
Single |
87 A |
57 A |
- |
- |
600 |
250 nA |
- |
- |
- |
20 V |
+ 175 C |
- 55 C |
SMD/SMT |
- |
- |
- |
HU3PAK-7 |
Reel |
- |
441 W |
- |
AEC-Q101 |
RoHS Compliant |
- |
- |
0.081836 oz |
- |
- |
|
STGWA30M65DF2AG
STMicroelectronics |
- |
- |
|
- |
- |
650 V |
2.02 V |
Single |
87 A |
57 A |
- |
- |
30 |
250 nA |
- |
- |
- |
20 V |
+ 175 C |
- 55 C |
Through Hole |
- |
- |
- |
TO-247-3 |
Tube |
- |
441 W |
- |
AEC-Q101 |
RoHS Compliant |
- |
- |
0.215171 oz |
- |
- |
|
VS-GT150TS065S
Vishay General Semiconductor - Diodes Division |
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- |
|
- |
- |
- |
- |
- |
Half Bridge Inverter |
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- |
150 u00b5A |
372 A |
- |
- |
Trench |
Standard |
- |
- |
- |
- |
- |
Chassis Mount |
No |
-40u00b0C ~ 175u00b0C (TJ) |
Module |
Box |
Active |
- |
789 W |
- |
- |
FRED Ptu00ae |
INT-A-PAK IGBT |
- |
1.32V @ 15V, 150A |
650 V |
VS-GT80DA120U
Vishay General Semiconductor - Diodes Division |
- |
- |
|
- |
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GT80 |
- |
- |
Single |
- |
- |
100 u00b5A |
139 A |
- |
- |
Trench |
Standard |
4.4 nF @ 25 V |
- |
- |
- |
- |
Chassis Mount |
No |
-40u00b0C ~ 150u00b0C (TJ) |
SOT-227-4, miniBLOC |
Tube |
Active |
- |
658 W |
- |
- |
HEXFREDu00ae |
SOT-227 |
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2.55V @ 15V, 80A |
1200 V |
