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Vishay General Semiconductor - Diodes Division VS-GT80DA120U
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Vishay General Semiconductor - Diodes Division VS-GT80DA120U

Vishay General Semiconductor - Diodes Division

Manufacturer No:

VS-GT80DA120U

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ECAD Model:

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Description:

IGBT MOD 1200V 139A 658W SOT227

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Vishay General Semiconductor - Diodes Division VS-GT80DA120U information

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Vishay General Semiconductor - Diodes Division VS-GT80DA120U technical specifications, attributes, parameters and parts with similar specifications to Vishay General Semiconductor - Diodes Division VS-GT80DA120U.
ParameterValue
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Supplier Device Package SOT-227
Base Product Number GT80
Current-Collector (Ic) (Max) 139 A
Operating Temperature -40u00b0C ~ 150u00b0C (TJ)
Packaging Tube
Series HEXFREDu00ae
Part Status Active
Configuration Single
Power - Max 658 W
Input Standard
Current - Collector Cutoff (Max) 100 u00b5A
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 2.55V @ 15V, 80A
IGBT Type Trench
NTC Thermistor No
Input Capacitance (Cies) @ Vce 4.4 nF @ 25 V

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