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STMicroelectronics STGWA30M65DF2AG
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STMicroelectronics STGWA30M65DF2AG

STMicroelectronics

Manufacturer No:

STGWA30M65DF2AG

Manufacturer:

STMicroelectronics

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Package:

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ECAD Model:

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Description:

IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT

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  • Prepare productStep1:Prepare product
  • Vacuum packagingStep2:Vacuum packaging
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STMicroelectronics STGWA30M65DF2AG information

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STMicroelectronics STGWA30M65DF2AG technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGWA30M65DF2AG.
ParameterValue
Package / Case TO-247-3
Collector- Emitter Voltage VCEO Max 650 V
Collector-Emitter Saturation Voltage 2.02 V
Continuous Collector Current at 25 C 87 A
Continuous Collector Current Ic Max 57 A
Factory Pack Quantity 30
Gate-Emitter Leakage Current 250 nA
Maximum Gate Emitter Voltage 20 V
Maximum Operating Temperature + 175 C
Minimum Operating Temperature - 55 C
Mounting Styles Through Hole
Pd - Power Dissipation 441 W
Qualification AEC-Q101
RoHS RoHS Compliant
Unit Weight 0.215171 oz
Packaging Tube
Configuration Single

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