MOSFETs Transistors Arrays – Cybertant Technology

Home / All Products / Discrete Semiconductors / MOSFETs Transistors Arrays

Filters

Manufacturer
Alpha & Omega Semiconductor Inc. (1)

Diodes Incorporated (7)

Infineon Technologies (39)

ON Semiconductor (51)

STMicroelectronics (2)
Additional Feature
HIGH RELIABILITY (1)

AVALANCHE RATED, HIGH RELIABILITY (1)

LOGIC LEVEL COMPATIBLE (1)

ESD PROTECTION, LOW THRESHOLD (1)

LOW THRESHOLD (1)
Avalanche Energy Rating (Eas)
33 mJ (1)

44 mJ (2)

61 mJ (1)

15 mJ (1)

360 mJ (1)
Base Part Number
IRF9910PBF (1)

IRF9952PBF (1)

IRF9956PBF (1)

IRLHS6376 (1)

NTGD4167C (1)

NTJD4152P (1)

NTJD4158C (1)

NTJD4401N (1)

NTMD6N02 (1)

NTZD3152P (1)

NTZD3154N (1)

NTZD3155C (1)

STS2D (1)

STS4D (1)
Case Connection
SOURCE (1)

DRAIN (1)
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE (1)
Contact Plating
Tin (5)
Continuous Drain Current (ID)
10A (1)

3.5A (2)

188A (1)

3.6A (1)

510mA (2)

2.3A (1)

2.6A (1)

250mA (1)

880mA (3)

630mA (1)

6.5A (1)

430mA (1)

540mA (2)

3A (1)

4A (1)
Current - Continuous Drain (Id) @ 25u2103
10A 12A (1)

3.5A 2.3A (1)

64A 188A (1)

510mA 340mA (1)

2.6A 1.9A (1)

250mA 880mA (1)

3.92A (1)

540mA 430mA (1)
Current Rating
10A (1)

3.5A (2)

350mA (2)

-2.3A (1)

250mA (2)

-880mA (1)

630mA (1)

6A (1)

-430mA (1)

540mA (2)

3A (1)

4A (1)
Drain Current-Max (Abs) (ID)
45A (1)

3.4A (1)

0.51A (2)

0.88A (2)

0.43A (1)

0.54A (2)

3A (1)

4A (1)
Drain to Source Breakdown Voltage
20V (5)

30V (6)

60V (2)

50V (1)

-60V (1)

-20V (3)
Drain to Source Voltage (Vdss)
25V (1)

30V (1)

60V (1)

20V (3)

30V 20V (1)
Drain-source On Resistance-Max
0.1Ohm (1)

0.0046Ohm (1)

0.082Ohm (1)

0.26Ohm (1)

0.55Ohm (1)

0.15Ohm (1)
DS Breakdown Voltage-Min
20V (1)
Dual Supply Voltage
60V (1)

50V (1)
ECCN Code
EAR99 (19)
Element Configuration
Dual (16)
Factory Lead Time
12 Weeks (6)

14 Weeks (1)

8 Weeks (1)

5 Weeks (1)

20 Weeks (1)

4 Weeks (1)

11 Weeks (2)

10 Weeks (2)

17 Weeks (1)

45 Weeks (1)

15 Weeks (1)

13 Weeks (1)
Fall Time (Typ)
3 ns (2)

9.4 ns (1)

10 ns (2)

6 ns (1)

8 ns (2)

23 ns (1)

6.5 ns (1)

3.5 ns (1)

227 ns (1)

80 ns (1)

12 ns (1)

4 ns (1)

19 ns (1)
Feedback Cap-Max (Crss)
5 pF (1)
FET Feature
Logic Level Gate (16)

Standard (4)
FET Technology
METAL-OXIDE SEMICONDUCTOR (20)
FET Type
2 N-Channel (Dual) (10)

N and P-Channel (5)

2 N-Channel (Dual), Schottky (1)

2 P-Channel (Dual) (4)
Gate Charge (Qg) (Max) @ Vgs
11nC @ 4.5V (1)

14nC @ 10V (2)

15nC @ 4.5V (2)

2.8nC @ 4.5V (1)

1.5nC @ 10V (1)

1nC @ 10V (1)

13nC @ 10V (1)

5.5nC @ 4.5V (1)

1.3nC @ 5V (1)

2.2nC @ 4.5V (2)

1.5nC @ 5V (1)

3nC @ 4.5V (1)

20nC @ 4.5V (1)

2.5nC @ 4.5V (3)

4.5nC @ 10V (1)
Gate to Source Voltage (Vgs)
20V (8)

12V (6)

6V (3)

18V (1)

15V (1)
Height
1.4986mm (3)

900u03bcm (3)

1.5mm (2)

1mm (3)

990.6u03bcm (2)

600u03bcm (2)

6.35mm (1)

1.25mm (1)
Input Capacitance (Ciss) (Max) @ Vds
900pF @ 10V (1)

190pF @ 15V (2)

1314pF @ 13V (1)

270pF @ 25V (1)

20pF @ 25V (2)

394pF @ 30V (1)

295pF @ 15V (1)

33pF @ 5V (2)

155pF @ 20V (2)

46pF @ 20V (1)

1100pF @ 16V (1)

175pF @ 16V (1)

150pF @ 16V (2)

121pF @ 25V (1)

1030pF @ 25V (1)
JESD-30 Code
R-PDSO-G6 (1)
JESD-609 Code
e3 (16)

e4 (1)
Lead Free
Lead Free (17)

Contains Lead, Lead Free (2)
Length
4.9784mm (3)

6mm (1)

3mm (2)

5mm (3)

3.1mm (1)

2.2mm (2)

2.1844mm (2)

1.7mm (2)

50.8mm (1)
Lifecycle Status
ACTIVE (Last Updated: 3 days ago) (6)

ACTIVE (Last Updated: 22 hours ago) (1)

ACTIVE (Last Updated: 23 hours ago) (1)

ACTIVE (Last Updated: 1 day ago) (3)

ACTIVE (Last Updated: 2 days ago) (1)

NRND (Last Updated: 7 months ago) (1)

ACTIVE (Last Updated: 8 months ago) (1)
Max Junction Temperature (Tj)
150u00b0C (1)
Max Power Dissipation
2W (7)

63W (1)

1.5W (1)

700mW (2)

900mW (1)

272mW (3)

270mW (2)

250mW (3)
Min Breakdown Voltage
60V (1)
Moisture Sensitivity Level (MSL)
1 (Unlimited) (19)

3 (168 Hours) (1)
Mount
Surface Mount (10)
Mounting Type
Surface Mount (20)
Nominal Vgs
2.55 V (1)

1 V (2)

20 V (1)

800 mV (1)

2.1 V (1)

1.9 V (1)

-1.5 V (1)

1.2 V (1)

920 mV (1)

900 mV (1)
Number of Elements
2 (20)
Number of Channels
2 (2)
Number of Pins
8 (8)

6 (11)
Number of Terminations
8 (8)

6 (12)
Operating Mode
ENHANCEMENT MODE (20)
Operating Temperature
-55u00b0C~150u00b0C TJ (19)

-55u00b0C~175u00b0C TJ (1)
Package / Case
8-SOIC (0.154, 3.90mm Width) (7)

8-PowerVDFN (1)

6-VDFN Exposed Pad (1)

SOT-23-6 Thin, TSOT-23-6 (3)

6-TSSOP, SC-88, SOT-363 (5)

SOT-563, SOT-666 (3)
Packaging
Tape & Reel (TR) (19)

Cut Tape (CT) (1)
Part Status
Active (18)

Not For New Designs (2)
Pbfree Code
yes (12)
Peak Reflow Temperature (Cel)
260 (10)

NOT SPECIFIED (1)
Pin Count
6 (8)

8 (3)
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL (5)
Power - Max
31W 63W (1)

900mW (1)

272mW (1)

730mW (1)
Power Dissipation
2W (7)

1.5W (1)

960mW (2)

1.1W (1)

272mW (2)

270mW (2)

250mW (3)
Published
2004 (4)

2013 (1)

2011 (1)

2002 (2)

1998 (1)

2007 (3)

2000 (1)

2015 (1)

2005 (2)

1997 (1)

2003 (1)
Pulsed Drain Current-Max (IDM)
16A (3)

10A (1)

30A (1)

9A (1)
Qualification Status
Not Qualified (1)
Radiation Hardening
No (18)
Rds On (Max) @ Id, Vgs
9.3m u03a9 @ 12A, 10V (1)

100m u03a9 @ 2.2A, 10V (2)

3.2m u03a9 @ 30A, 10V (1)

63m u03a9 @ 3.4A, 4.5V (1)

2 u03a9 @ 510mA, 10V (2)

250m u03a9 @ 2.3A, 10V (1)

90m u03a9 @ 2.6A, 4.5V (1)

1.5 u03a9 @ 10mA, 4V (1)

260m u03a9 @ 880mA, 4.5V (2)

1.5 u03a9 @ 10mA, 4.5V (1)

375m u03a9 @ 630mA, 4.5V (1)

35m u03a9 @ 6A, 4.5V (1)

900m u03a9 @ 430mA, 4.5V (1)

550m u03a9 @ 540mA, 4.5V (2)

110m u03a9 @ 1A, 10V (1)

55m u03a9 @ 2A, 10V (1)
REACH SVHC
No SVHC (18)
Resistance
13.4MOhm (1)

100mOhm (1)

2Ohm (2)

90MOhm (1)

1Ohm (1)

215MOhm (1)

1.5Ohm (1)

220mOhm (1)

35MOhm (1)

500mOhm (1)

400MOhm (1)

55mOhm (1)
Rise Time
14ns (1)

8.8ns (1)

11ns (1)

10ns (1)

6ns (1)

9ns (1)

8ns (1)

23ns (1)

6.5ns (2)

227ns (1)

50ns (1)

12ns (2)

4ns (1)

20ns (1)

28ns (1)
RoHS Status
ROHS3 Compliant (20)
Series
HEXFETu00ae (4)

FASTIRFETu2122 (1)

PowerTrenchu00ae (1)

STripFETu2122 (2)
Surface Mount
YES (10)
Terminal Finish
Matte Tin (Sn) (3)

Tin (Sn) (8)

Nickel/Palladium/Gold (Ni/Pd/Au) (1)
Terminal Form
GULL WING (15)

FLAT (3)
Terminal Position
DUAL (1)
Threshold Voltage
1V (2)

1.6V (1)

800mV (1)

2.1V (1)

1.9V (1)

-1.5V (1)

900mV (1)

1.2V (2)

-1.2V (1)

920mV (1)

1.7V (2)
Time@Peak Reflow Temperature-Max (s)
40 (8)

NOT SPECIFIED (1)

30 (2)
Transistor Application
SWITCHING (20)
Transistor Element Material
SILICON (20)
Turn Off Delay Time
20 ns (1)

13 ns (1)

11 ns (2)

8 ns (1)

16 ns (2)

22 ns (1)

94 ns (1)

13.5 ns (2)

786 ns (1)

45 ns (2)

35 ns (2)

12 ns (1)
Turn On Delay Time
6.2 ns (1)

4.4 ns (1)

2.8 ns (1)

6 ns (3)

8 ns (1)

17 ns (1)

5.8 ns (1)

15 ns (2)

83 ns (1)

12 ns (1)

10 ns (1)

19 ns (1)
Vgs(th) (Max) @ Id
2.55V @ 250u03bcA (1)

1V @ 250u03bcA (5)

2.1V @ 35u03bcA (1)

1.1V @ 10u03bcA (1)

2.5V @ 250u03bcA (4)

3V @ 250u03bcA (1)

1.5V @ 250u03bcA (2)

1.5V @ 100u03bcA (2)

1.2V @ 250u03bcA (3)
Voltage - Rated DC
20V (6)

50V (1)

-60V (1)

30V (2)

-20V (2)

60V (1)
Weight
36mg (2)

187mg (1)

4.535924g (2)
Width
3.9878mm (3)

5mm (1)

1.7mm (3)

4mm (2)

1.35mm (2)

1.3462mm (2)

1.3mm (2)

6.35mm (1)

4.05mm (1)

Categories

MOSFETs Transistors Arrays

View Mode:

100 Results

Product	Inventory	Pricing(USD)	Datasheet	Additional Feature	Avalanche Energy Rating (Eas)	Base Part Number	Case Connection	Configuration	Contact Plating	Continuous Drain Current (ID)	Current - Continuous Drain (Id) @ 25u2103	Current Rating	Drain Current-Max (Abs) (ID)	Drain to Source Breakdown Voltage	Drain to Source Voltage (Vdss)	Drain-source On Resistance-Max	DS Breakdown Voltage-Min	Dual Supply Voltage	ECCN Code	Element Configuration	Factory Lead Time	Fall Time (Typ)	Feedback Cap-Max (Crss)	FET Feature	FET Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs	Gate to Source Voltage (Vgs)	Height	Input Capacitance (Ciss) (Max) @ Vds	JESD-30 Code	JESD-609 Code	Lead Free	Length	Lifecycle Status	Max Junction Temperature (Tj)	Max Power Dissipation	Min Breakdown Voltage	Moisture Sensitivity Level (MSL)	Mount	Mounting Type	Nominal Vgs	Number of Elements	Number of Channels	Number of Pins	Number of Terminations	Operating Mode	Operating Temperature	Package / Case	Packaging	Part Status	Pbfree Code	Peak Reflow Temperature (Cel)	Pin Count	Polarity/Channel Type	Power - Max	Power Dissipation	Published	Pulsed Drain Current-Max (IDM)	Qualification Status	Radiation Hardening	Rds On (Max) @ Id, Vgs	REACH SVHC	Resistance	Rise Time	RoHS Status	Series	Surface Mount	Terminal Finish	Terminal Form	Terminal Position	Threshold Voltage	Time@Peak Reflow Temperature-Max (s)	Transistor Application	Transistor Element Material	Turn Off Delay Time	Turn On Delay Time	Vgs(th) (Max) @ Id	Voltage - Rated DC	Weight	Width
IRF9910TRPBF Infineon Technologies	-	-	-	-	33 mJ	IRF9910PBF	-	-	-	10A	10A 12A	10A	-	20V	-	-	-	-	EAR99	Dual	12 Weeks	-	-	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 N-Channel (Dual)	11nC @ 4.5V	20V	1.4986mm	900pF @ 10V	-	e3	Lead Free	4.9784mm	-	-	2W	-	1 (Unlimited)	Surface Mount	Surface Mount	2.55 V	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	-	-	-	-	-	2W	2004	-	-	No	9.3m u03a9 @ 12A, 10V	No SVHC	13.4MOhm	-	ROHS3 Compliant	HEXFETu00ae	-	Matte Tin (Sn)	GULL WING	-	-	-	SWITCHING	SILICON	-	-	2.55V @ 250u03bcA	20V	-	3.9878mm
IRF9952TRPBF Infineon Technologies	11	-	-	HIGH RELIABILITY	44 mJ	IRF9952PBF	-	-	-	3.5A	3.5A 2.3A	3.5A	-	30V	-	-	-	-	EAR99	-	12 Weeks	-	-	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	N and P-Channel	14nC @ 10V	20V	1.4986mm	190pF @ 15V	-	-	Contains Lead, Lead Free	4.9784mm	-	-	2W	-	1 (Unlimited)	Surface Mount	Surface Mount	1 V	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	-	-	-	N-CHANNEL AND P-CHANNEL	-	2W	2004	16A	-	No	100m u03a9 @ 2.2A, 10V	No SVHC	100mOhm	14ns	ROHS3 Compliant	HEXFETu00ae	-	-	GULL WING	DUAL	1V	-	SWITCHING	SILICON	20 ns	-	1V @ 250u03bcA	-	-	3.9878mm
IRF9956TRPBF Infineon Technologies	-	-	-	AVALANCHE RATED, HIGH RELIABILITY	44 mJ	IRF9956PBF	-	-	-	3.5A	-	3.5A	-	30V	-	0.1Ohm	-	-	-	Dual	12 Weeks	3 ns	-	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 N-Channel (Dual)	14nC @ 10V	20V	1.4986mm	190pF @ 15V	-	-	Contains Lead, Lead Free	4.9784mm	-	-	2W	-	1 (Unlimited)	Surface Mount	Surface Mount	20 V	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	-	-	-	-	-	2W	2004	16A	-	No	100m u03a9 @ 2.2A, 10V	No SVHC	-	8.8ns	ROHS3 Compliant	HEXFETu00ae	-	-	GULL WING	-	-	-	SWITCHING	SILICON	13 ns	6.2 ns	1V @ 250u03bcA	20V	-	3.9878mm
IRFH4251DTRPBF Infineon Technologies	112500	-	-	-	61 mJ	-	SOURCE	-	-	188A	64A 188A	-	45A	-	25V	0.0046Ohm	-	-	EAR99	Dual	14 Weeks	-	-	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 N-Channel (Dual), Schottky	15nC @ 4.5V	20V	900u03bcm	1314pF @ 13V	-	-	Lead Free	6mm	-	-	63W	-	1 (Unlimited)	Surface Mount	Surface Mount	-	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-PowerVDFN	Tape & Reel (TR)	Not For New Designs	-	-	-	-	31W 63W	-	2013	-	-	No	3.2m u03a9 @ 30A, 10V	No SVHC	-	-	ROHS3 Compliant	FASTIRFETu2122	-	-	-	-	1.6V	-	SWITCHING	SILICON	-	-	2.1V @ 35u03bcA	-	-	5mm
IRLHS6376TRPBF Infineon Technologies	3816	-	-	-	-	IRLHS6376	DRAIN	-	-	3.6A	-	-	3.4A	30V	30V	0.082Ohm	-	-	EAR99	Dual	12 Weeks	9.4 ns	-	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 N-Channel (Dual)	2.8nC @ 4.5V	12V	-	270pF @ 25V	-	e3	Lead Free	-	-	-	1.5W	-	1 (Unlimited)	Surface Mount	Surface Mount	800 mV	2	-	6	6	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	6-VDFN Exposed Pad	Tape & Reel (TR)	Active	-	-	-	-	-	1.5W	2011	-	-	No	63m u03a9 @ 3.4A, 4.5V	No SVHC	-	11ns	ROHS3 Compliant	HEXFETu00ae	-	Matte Tin (Sn)	-	-	800mV	-	SWITCHING	SILICON	11 ns	4.4 ns	1.1V @ 10u03bcA	-	-	-
NDC7001C ON Semiconductor	557697	-	-	-	-	-	-	-	Tin	510mA	510mA 340mA	350mA	0.51A	60V	-	-	-	60V	EAR99	Dual	8 Weeks	10 ns	-	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	N and P-Channel	1.5nC @ 10V	20V	900u03bcm	20pF @ 25V	-	e3	Lead Free	3mm	ACTIVE (Last Updated: 3 days ago)	150u00b0C	700mW	60V	1 (Unlimited)	Surface Mount	Surface Mount	2.1 V	2	2	6	6	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Active	yes	-	-	N-CHANNEL AND P-CHANNEL	-	960mW	2002	-	-	No	2 u03a9 @ 510mA, 10V	No SVHC	2Ohm	10ns	ROHS3 Compliant	-	-	-	GULL WING	-	2.1V	-	SWITCHING	SILICON	8 ns	2.8 ns	2.5V @ 250u03bcA	-	36mg	1.7mm
NDC7002N ON Semiconductor	239	-	-	-	-	-	-	-	Tin	510mA	-	350mA	0.51A	50V	-	-	-	50V	EAR99	Dual	5 Weeks	6 ns	-	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 N-Channel (Dual)	1nC @ 10V	20V	900u03bcm	20pF @ 25V	-	e3	Lead Free	3mm	ACTIVE (Last Updated: 3 days ago)	-	700mW	-	1 (Unlimited)	Surface Mount	Surface Mount	1.9 V	2	2	6	6	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Active	yes	-	-	-	-	960mW	1998	-	-	No	2 u03a9 @ 510mA, 10V	No SVHC	2Ohm	6ns	ROHS3 Compliant	-	-	-	GULL WING	-	1.9V	-	SWITCHING	SILICON	11 ns	6 ns	2.5V @ 250u03bcA	50V	36mg	1.7mm
NDS9948 ON Semiconductor	42	-	-	-	15 mJ	-	-	-	-	2.3A	-	-2.3A	-	-60V	60V	-	-	-	EAR99	Dual	20 Weeks	3 ns	-	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 P-Channel (Dual)	13nC @ 10V	20V	1.5mm	394pF @ 30V	-	e3	Lead Free	5mm	ACTIVE (Last Updated: 3 days ago)	-	2W	-	1 (Unlimited)	Surface Mount	Surface Mount	-1.5 V	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~175u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	yes	-	-	-	900mW	2W	2002	10A	-	No	250m u03a9 @ 2.3A, 10V	No SVHC	-	9ns	ROHS3 Compliant	PowerTrenchu00ae	-	Tin (Sn)	GULL WING	-	-1.5V	-	SWITCHING	SILICON	16 ns	6 ns	3V @ 250u03bcA	-60V	187mg	4mm
NTGD4167CT1G ON Semiconductor	1455	-	-	-	-	NTGD4167C	-	-	-	2.6A	2.6A 1.9A	-	-	30V	-	-	-	-	EAR99	Dual	4 Weeks	8 ns	-	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	N and P-Channel	5.5nC @ 4.5V	12V	1mm	295pF @ 15V	-	e3	Lead Free	3.1mm	ACTIVE (Last Updated: 3 days ago)	-	900mW	-	1 (Unlimited)	-	Surface Mount	-	2	-	6	6	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	SOT-23-6 Thin, TSOT-23-6	Tape & Reel (TR)	Active	yes	-	6	N-CHANNEL AND P-CHANNEL	-	1.1W	2007	-	-	No	90m u03a9 @ 2.6A, 4.5V	No SVHC	90MOhm	8ns	ROHS3 Compliant	-	YES	Tin (Sn)	GULL WING	-	900mV	-	SWITCHING	SILICON	22 ns	8 ns	1.5V @ 250u03bcA	-	-	1.7mm
NTJD4001NT1G ON Semiconductor	38548	-	-	-	-	-	-	-	Tin	250mA	-	250mA	-	30V	-	-	-	-	EAR99	Dual	12 Weeks	23 ns	-	Standard	METAL-OXIDE SEMICONDUCTOR	2 N-Channel (Dual)	1.3nC @ 5V	20V	1mm	33pF @ 5V	-	e3	Lead Free	2.2mm	ACTIVE (Last Updated: 22 hours ago)	-	272mW	-	1 (Unlimited)	-	Surface Mount	1.2 V	2	-	6	6	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Active	yes	260	6	-	-	272mW	2007	-	-	No	1.5 u03a9 @ 10mA, 4V	No SVHC	1Ohm	23ns	ROHS3 Compliant	-	YES	-	GULL WING	-	1.2V	40	SWITCHING	SILICON	94 ns	17 ns	1.5V @ 100u03bcA	30V	-	1.35mm
NTJD4152PT1G ON Semiconductor	1892	-	-	-	-	NTJD4152P	-	-	-	880mA	-	-880mA	0.88A	-20V	20V	-	-	-	EAR99	Dual	11 Weeks	6.5 ns	-	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 P-Channel (Dual)	2.2nC @ 4.5V	12V	990.6u03bcm	155pF @ 20V	-	e3	Lead Free	2.1844mm	ACTIVE (Last Updated: 23 hours ago)	-	272mW	-	1 (Unlimited)	-	Surface Mount	-	2	-	6	6	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Active	yes	260	6	-	-	272mW	2000	-	-	No	260m u03a9 @ 880mA, 4.5V	No SVHC	215MOhm	6.5ns	ROHS3 Compliant	-	YES	Tin (Sn)	GULL WING	-	-1.2V	40	SWITCHING	SILICON	13.5 ns	5.8 ns	1.2V @ 250u03bcA	-20V	-	1.3462mm
NTJD4152PT2G ON Semiconductor	120000	-	-	-	-	-	-	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	-	880mA	-	-	0.88A	-	20V	0.26Ohm	20V	-	EAR99	-	11 Weeks	-	-	Standard	METAL-OXIDE SEMICONDUCTOR	2 P-Channel (Dual)	2.2nC @ 4.5V	-	-	155pF @ 20V	R-PDSO-G6	e3	-	-	-	-	272mW	-	1 (Unlimited)	-	Surface Mount	-	2	-	-	6	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Active	-	NOT SPECIFIED	-	-	272mW	-	2015	-	-	-	260m u03a9 @ 880mA, 4.5V	-	-	-	ROHS3 Compliant	-	YES	Tin (Sn)	GULL WING	-	-	NOT SPECIFIED	SWITCHING	SILICON	-	-	1.2V @ 250u03bcA	-	-	-
NTJD4158CT1G ON Semiconductor	30000	-	-	-	-	NTJD4158C	-	-	-	880mA	250mA 880mA	250mA	-	-20V	30V 20V	-	-	-	EAR99	Dual	10 Weeks	3.5 ns	-	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	N and P-Channel	1.5nC @ 5V	12V	1mm	33pF @ 5V	-	e3	Lead Free	2.2mm	ACTIVE (Last Updated: 3 days ago)	-	270mW	-	1 (Unlimited)	-	Surface Mount	-	2	-	6	6	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Active	yes	260	6	N-CHANNEL AND P-CHANNEL	-	270mW	2005	-	-	No	1.5 u03a9 @ 10mA, 4.5V	No SVHC	1.5Ohm	6.5ns	ROHS3 Compliant	-	YES	Tin (Sn)	GULL WING	-	1.2V	40	SWITCHING	SILICON	13.5 ns	15 ns	1.5V @ 100u03bcA	-	-	1.35mm
NTJD4401NT1G ON Semiconductor	9255	-	-	-	-	NTJD4401N	-	-	-	630mA	-	630mA	-	20V	-	-	-	-	EAR99	Dual	17 Weeks	227 ns	5 pF	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 N-Channel (Dual)	3nC @ 4.5V	12V	990.6u03bcm	46pF @ 20V	-	e3	Lead Free	2.1844mm	ACTIVE (Last Updated: 1 day ago)	-	270mW	-	1 (Unlimited)	-	Surface Mount	920 mV	2	-	6	6	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Active	yes	260	6	-	-	270mW	1997	-	-	No	375m u03a9 @ 630mA, 4.5V	No SVHC	220mOhm	227ns	ROHS3 Compliant	-	YES	Tin (Sn)	GULL WING	-	920mV	40	SWITCHING	SILICON	786 ns	83 ns	1.5V @ 250u03bcA	20V	-	1.3462mm
NTMD6N02R2G ON Semiconductor	33288	-	-	LOGIC LEVEL COMPATIBLE	360 mJ	NTMD6N02	-	-	Tin	6.5A	3.92A	6A	-	20V	-	-	-	-	EAR99	Dual	45 Weeks	80 ns	-	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 N-Channel (Dual)	20nC @ 4.5V	12V	1.5mm	1100pF @ 16V	-	e3	Lead Free	5mm	ACTIVE (Last Updated: 1 day ago)	-	2W	-	1 (Unlimited)	-	Surface Mount	900 mV	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	yes	260	8	-	730mW	2W	2004	30A	-	No	35m u03a9 @ 6A, 4.5V	No SVHC	35MOhm	50ns	ROHS3 Compliant	-	YES	-	GULL WING	-	-	40	SWITCHING	SILICON	45 ns	12 ns	1.2V @ 250u03bcA	20V	-	4mm
NTZD3152PT1G ON Semiconductor	59242	-	-	ESD PROTECTION, LOW THRESHOLD	-	NTZD3152P	-	-	-	430mA	-	-430mA	0.43A	-20V	20V	-	-	-	EAR99	Dual	10 Weeks	12 ns	-	Standard	METAL-OXIDE SEMICONDUCTOR	2 P-Channel (Dual)	2.5nC @ 4.5V	6V	600u03bcm	175pF @ 16V	-	e3	Lead Free	1.7mm	ACTIVE (Last Updated: 1 day ago)	-	250mW	-	1 (Unlimited)	-	Surface Mount	-	2	-	6	6	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	SOT-563, SOT-666	Tape & Reel (TR)	Active	yes	260	6	-	-	250mW	2003	-	-	No	900m u03a9 @ 430mA, 4.5V	-	500mOhm	12ns	ROHS3 Compliant	-	YES	Tin (Sn)	FLAT	-	-	40	SWITCHING	SILICON	35 ns	10 ns	1V @ 250u03bcA	-20V	-	1.3mm
NTZD3154NT1G ON Semiconductor	23010	-	-	-	-	NTZD3154N	-	-	-	540mA	-	540mA	0.54A	20V	-	-	-	-	EAR99	Dual	15 Weeks	4 ns	-	Standard	METAL-OXIDE SEMICONDUCTOR	2 N-Channel (Dual)	2.5nC @ 4.5V	6V	600u03bcm	150pF @ 16V	-	e3	Lead Free	1.7mm	ACTIVE (Last Updated: 3 days ago)	-	250mW	-	1 (Unlimited)	-	Surface Mount	-	2	-	6	6	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	SOT-563, SOT-666	Tape & Reel (TR)	Active	yes	260	6	-	-	250mW	2005	-	-	No	550m u03a9 @ 540mA, 4.5V	No SVHC	400MOhm	4ns	ROHS3 Compliant	-	YES	Tin (Sn)	FLAT	-	1V	40	SWITCHING	SILICON	16 ns	6 ns	1V @ 250u03bcA	20V	-	1.3mm
NTZD3155CT2G ON Semiconductor	100497	-	-	-	-	NTZD3155C	-	-	Tin	540mA	540mA 430mA	540mA	0.54A	20V	-	0.55Ohm	-	-	EAR99	Dual	13 Weeks	19 ns	-	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	N and P-Channel	2.5nC @ 4.5V	6V	-	150pF @ 16V	-	e3	Lead Free	-	ACTIVE (Last Updated: 2 days ago)	-	250mW	-	1 (Unlimited)	-	Surface Mount	1 V	2	-	6	6	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	SOT-563, SOT-666	Tape & Reel (TR)	Active	yes	260	6	N-CHANNEL AND P-CHANNEL	-	250mW	2007	-	-	No	550m u03a9 @ 540mA, 4.5V	No SVHC	-	12ns	ROHS3 Compliant	-	YES	-	FLAT	-	-	40	SWITCHING	SILICON	35 ns	-	1V @ 250u03bcA	20V	-	-
STS2DNF30L STMicroelectronics	7500	-	-	-	-	STS2D	-	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	-	3A	-	3A	3A	30V	-	0.15Ohm	-	-	EAR99	-	-	8 ns	-	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 N-Channel (Dual)	4.5nC @ 10V	18V	6.35mm	121pF @ 25V	-	e4	Lead Free	50.8mm	NRND (Last Updated: 7 months ago)	-	2W	-	3 (168 Hours)	Surface Mount	Surface Mount	-	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Not For New Designs	-	260	8	-	-	2W	-	9A	-	No	110m u03a9 @ 1A, 10V	No SVHC	-	20ns	ROHS3 Compliant	STripFETu2122	-	Nickel/Palladium/Gold (Ni/Pd/Au)	GULL WING	-	1.7V	30	SWITCHING	SILICON	12 ns	19 ns	2.5V @ 250u03bcA	30V	4.535924g	6.35mm
STS4DNF60L STMicroelectronics	10000	-	-	LOW THRESHOLD	-	STS4D	-	-	-	4A	-	4A	4A	60V	-	-	-	-	EAR99	-	12 Weeks	10 ns	-	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 N-Channel (Dual)	15nC @ 4.5V	15V	1.25mm	1030pF @ 25V	-	e3	Lead Free	5mm	ACTIVE (Last Updated: 8 months ago)	-	2W	-	1 (Unlimited)	Surface Mount	Surface Mount	-	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Cut Tape (CT)	Active	-	260	8	-	-	2W	-	16A	Not Qualified	-	55m u03a9 @ 2A, 10V	No SVHC	55mOhm	28ns	ROHS3 Compliant	STripFETu2122	-	Matte Tin (Sn)	GULL WING	-	1.7V	30	SWITCHING	SILICON	45 ns	15 ns	2.5V @ 250u03bcA	60V	4.535924g	4.05mm

Categories

Cybertant Technology - Electronic Components Distributor

Connect with us

Information

Support

Quick Links

Follow Us

Payment

Certification