MOSFETs Transistors Arrays – Cybertant Technology

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Manufacturer
Alpha & Omega Semiconductor Inc. (1)

Diodes Incorporated (7)

Infineon Technologies (39)

ON Semiconductor (51)

STMicroelectronics (2)
Additional Feature
ULTRA LOW RESISTANCE (3)

AVALANCHE RATED, ULTRA LOW RESISTANCE (4)

AVALANCHE RATED (2)

HIGH RELIABILITY (1)

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE (1)

LOGIC LEVEL COMPATIBLE (1)
Avalanche Energy Rating (Eas)
100 mJ (2)

150 mJ (1)

140 mJ (2)

75 mJ (1)

15 mJ (1)

46 mJ (1)
Base Part Number
IRF7309PBF (1)

IRF7311PBF (1)

IRF7314PBF (1)

IRF7316PBF (1)

IRF7317PBF (1)

IRF7319PBF (1)

IRF7324PBF (1)

IRF7328PBF (1)

IRF7329PBF (1)

IRF7331PBF (1)

IRF7341PBF (1)

IRF7343PBF (1)

IRF7351PBF (1)

IRF7380PBF (1)

IRF7506PBF (1)

IRF7507PBF (1)

IRF7904PBF (1)

IRF7907PBF (1)

IRF8313PBF (1)

IRF8915PBF (1)
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE (1)
Contact Plating
Tin (9)
Continuous Drain Current (ID)
4A (1)

6.6A (2)

-5.3A (1)

-4.9A (1)

6.5A (1)

-9A (1)

-8A (1)

9.2A (1)

4.7A (2)

8A (1)

3.6A (1)

-1.7A (1)

2.4A (1)

11A (2)

9.7A (1)

8.9A (1)
Current - Continuous Drain (Id) @ 25u2103
4A 3A (1)

5.3A (1)

4.9A (1)

6.6A 5.3A (1)

9A (1)

8A (1)

7A (1)

4.7A 3.4A (1)

1.7A (1)

2.4A 1.7A (1)

7.6A 11A (1)

9.1A 11A (1)
Current Rating
4A (1)

6.6A (2)

-5.3A (1)

-4.9A (1)

6.5A (1)

-9A (1)

-8A (1)

-9.2A (1)

4.7A (2)

3.6A (1)

8.9A (1)
Drain Current-Max (Abs) (ID)
4A (1)

9A (1)

8A (2)

7A (1)

5.1A (1)
Drain to Source Breakdown Voltage
30V (5)

20V (4)

-20V (2)

-30V (3)

-12V (1)

55V (2)

60V (1)

80V (1)
Drain to Source Voltage (Vdss)
20V (3)

30V (4)

12V (1)

60V (1)
Drain-source On Resistance-Max
0.017Ohm (1)

0.03Ohm (1)
DS Breakdown Voltage-Min
20V (1)
Dual Supply Voltage
-30V (2)

55V (1)
ECCN Code
EAR99 (18)
Element Configuration
Dual (14)
Factory Lead Time
12 Weeks (18)
Fall Time (Typ)
31 ns (1)

49 ns (2)

32 ns (2)

190 ns (1)

98 ns (1)

260 ns (1)

13 ns (1)

22 ns (1)

6.7 ns (1)

17 ns (1)

9.3 ns (1)

4.2 ns (1)

3.6 ns (1)
FET Feature
Standard (3)

Logic Level Gate (17)
FET Technology
METAL-OXIDE SEMICONDUCTOR (20)
FET Type
N and P-Channel (5)

2 N-Channel (Dual) (9)

2 P-Channel (Dual) (6)
Gate Charge (Qg) (Max) @ Vgs
25nC @ 4.5V (1)

27nC @ 4.5V (2)

29nC @ 4.5V (1)

34nC @ 10V (1)

33nC @ 10V (1)

63nC @ 5V (1)

78nC @ 10V (1)

57nC @ 4.5V (1)

20nC @ 4.5V (1)

36nC @ 10V (3)

23nC @ 10V (1)

11nC @ 10V (1)

8nC @ 4.5V (1)

11nC @ 4.5V (1)

10nC @ 4.5V (1)

9nC @ 4.5V (1)

7.4nC @ 4.5V (1)
Gate to Source Voltage (Vgs)
20V (13)

12V (5)

8V (1)
Height
1.4986mm (12)

1.75mm (5)

910u03bcm (1)

860u03bcm (1)
Input Capacitance (Ciss) (Max) @ Vds
520pF @ 15V (1)

900pF @ 15V (2)

780pF @ 15V (1)

710pF @ 25V (1)

650pF @ 25V (1)

2940pF @ 15V (1)

2675pF @ 25V (1)

3450pF @ 10V (1)

1340pF @ 16V (1)

740pF @ 25V (2)

1330pF @ 30V (1)

660pF @ 25V (1)

180pF @ 25V (1)

260pF @ 15V (1)

910pF @ 15V (1)

850pF @ 15V (1)

760pF @ 15V (1)

540pF @ 10V (1)
JEDEC-95 Code
MS-012AA (1)
JESD-30 Code
R-PDSO-G8 (1)
JESD-609 Code
e3 (14)
Lead Free
Lead Free (15)

Contains Lead, Lead Free (4)
Length
4.9784mm (17)

3.048mm (1)

3mm (1)
Max Junction Temperature (Tj)
150u00b0C (5)
Max Power Dissipation
1.4W (1)

2W (16)

1.25W (2)
Moisture Sensitivity Level (MSL)
1 (Unlimited) (19)

2 (1 Year) (1)
Mount
Surface Mount (19)
Mounting Type
Surface Mount (20)
Nominal Vgs
1 V (4)

-700 mV (1)

-1 V (2)

700 mV (2)

-2.5 V (1)

4 V (1)

1.8 V (1)
Number of Elements
2 (20)
Number of Channels
2 (4)
Number of Pins
8 (19)
Number of Terminations
8 (19)
Operating Mode
ENHANCEMENT MODE (19)
Operating Temperature
-55u00b0C~150u00b0C TJ (19)

-55u00b0C~175u00b0C TJ (1)
Package / Case
8-SOIC (0.154, 3.90mm Width) (18)

8-TSSOP, 8-MSOP (0.118, 3.00mm Width) (2)
Packaging
Tape & Reel (TR) (19)

Tube (1)
Part Status
Active (17)

Discontinued (1)

Not For New Designs (2)
Peak Reflow Temperature (Cel)
260 (6)

NOT SPECIFIED (1)
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL (5)
Power - Max
2W (1)

1.4W 2W (1)
Power Dissipation
1.4W (1)

2W (16)

1.25W (2)
Power Dissipation-Max (Abs)
2W (1)
Published
2001 (1)

2004 (8)

1997 (4)

2009 (1)

2008 (4)

1998 (1)

2006 (1)
Pulsed Drain Current-Max (IDM)
16A (1)

30A (2)

71A (1)

64A (1)

9.6A (1)

19A (1)
Qualification Status
Not Qualified (1)
Radiation Hardening
No (19)
Rds On (Max) @ Id, Vgs
50m u03a9 @ 2.4A, 10V (1)

29m u03a9 @ 6A, 4.5V (2)

58m u03a9 @ 2.9A, 4.5V (1)

58m u03a9 @ 4.9A, 10V (1)

29m u03a9 @ 5.8A, 10V (1)

18m u03a9 @ 9A, 4.5V (1)

21m u03a9 @ 8A, 10V (1)

17m u03a9 @ 9.2A, 4.5V (1)

30m u03a9 @ 7A, 4.5V (1)

50m u03a9 @ 4.7A, 10V (2)

17.8m u03a9 @ 8A, 10V (1)

73m u03a9 @ 2.2A, 10V (1)

270m u03a9 @ 1.2A, 10V (1)

140m u03a9 @ 1.7A, 4.5V (1)

16.2m u03a9 @ 7.6A, 10V (1)

16.4m u03a9 @ 9.1A, 10V (1)

15.5m u03a9 @ 9.7A, 10V (1)

18.3m u03a9 @ 8.9A, 10V (1)
REACH SVHC
No SVHC (15)
Recovery Time
77 ns (1)

71 ns (1)

66 ns (1)

270 ns (1)

56 ns (1)

90 ns (1)
Resistance
50mOhm (3)

29mOhm (3)

58mOhm (2)

18mOhm (1)

21MOhm (1)

73MOhm (1)

270mOhm (2)

16.2MOhm (1)

15.5MOhm (1)

18.3MOhm (1)
Rise Time
17ns (1)

40ns (2)

13ns (2)

36ns (1)

15ns (1)

8.6ns (1)

3.2ns (1)

10ns (2)

5.9ns (1)

12ns (2)

9.9ns (1)
RoHS Status
ROHS3 Compliant (20)
Row Spacing
6.3 mm (6)
Series
HEXFETu00ae (20)
Surface Mount
YES (1)
Terminal Finish
Matte Tin (Sn) (7)
Terminal Form
GULL WING (19)
Terminal Position
DUAL (5)
Termination
SMD/SMT (2)
Threshold Voltage
1V (4)

700mV (3)

-700mV (1)

-1V (4)

4V (1)

1.8V (1)

2.5V (1)
Time@Peak Reflow Temperature-Max (s)
30 (5)

NOT SPECIFIED (1)

40 (1)
Transistor Application
SWITCHING (17)
Transistor Element Material
SILICON (19)
Turn Off Delay Time
25 ns (1)

38 ns (2)

41 ns (2)

34 ns (2)

42 ns (1)

170 ns (1)

198 ns (1)

340 ns (1)

32 ns (1)

43 ns (1)

17 ns (1)

19 ns (1)

8.5 ns (1)

7.1 ns (1)
Turn On Delay Time
8.1 ns (1)

15 ns (1)

13 ns (2)

17 ns (1)

10 ns (1)

8.3 ns (3)

5.1 ns (1)

9 ns (1)

9.7 ns (1)

6 ns (1)
Vgs(th) (Max) @ Id
1V @ 250u03bcA (7)

700mV @ 250u03bcA (4)

2.5V @ 250u03bcA (2)

900mV @ 250u03bcA (1)

1.2V @ 250u03bcA (1)

4V @ 50u03bcA (1)

4V @ 250u03bcA (1)

2.25V @ 25u03bcA (1)

2.35V @ 25u03bcA (2)
Voltage - Rated DC
20V (2)

-20V (2)

-30V (2)

-12V (1)

55V (1)

80V (1)
Width
4.05mm (1)

3.9878mm (16)

3.048mm (1)

3mm (1)

Categories

MOSFETs Transistors Arrays

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100 Results

Product	Inventory	Pricing(USD)	Datasheet	Additional Feature	Avalanche Energy Rating (Eas)	Base Part Number	Configuration	Contact Plating	Continuous Drain Current (ID)	Current - Continuous Drain (Id) @ 25u2103	Current Rating	Drain Current-Max (Abs) (ID)	Drain to Source Breakdown Voltage	Drain to Source Voltage (Vdss)	Drain-source On Resistance-Max	DS Breakdown Voltage-Min	Dual Supply Voltage	ECCN Code	Element Configuration	Factory Lead Time	Fall Time (Typ)	FET Feature	FET Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs	Gate to Source Voltage (Vgs)	Height	Input Capacitance (Ciss) (Max) @ Vds	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Lead Free	Length	Max Junction Temperature (Tj)	Max Power Dissipation	Moisture Sensitivity Level (MSL)	Mount	Mounting Type	Nominal Vgs	Number of Elements	Number of Channels	Number of Pins	Number of Terminations	Operating Mode	Operating Temperature	Package / Case	Packaging	Part Status	Peak Reflow Temperature (Cel)	Polarity/Channel Type	Power - Max	Power Dissipation	Power Dissipation-Max (Abs)	Published	Pulsed Drain Current-Max (IDM)	Qualification Status	Radiation Hardening	Rds On (Max) @ Id, Vgs	REACH SVHC	Recovery Time	Resistance	Rise Time	RoHS Status	Row Spacing	Series	Surface Mount	Terminal Finish	Terminal Form	Terminal Position	Termination	Threshold Voltage	Time@Peak Reflow Temperature-Max (s)	Transistor Application	Transistor Element Material	Turn Off Delay Time	Turn On Delay Time	Vgs(th) (Max) @ Id	Voltage - Rated DC	Width
IRF7309TRPBF Infineon Technologies	1415	-	-	ULTRA LOW RESISTANCE	-	IRF7309PBF	-	Tin	4A	4A 3A	4A	4A	30V	-	-	-	-	EAR99	-	12 Weeks	-	Standard	METAL-OXIDE SEMICONDUCTOR	N and P-Channel	25nC @ 4.5V	20V	1.4986mm	520pF @ 15V	-	-	e3	Lead Free	4.9784mm	-	1.4W	1 (Unlimited)	Surface Mount	Surface Mount	1 V	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	-	N-CHANNEL AND P-CHANNEL	-	1.4W	-	2001	16A	-	No	50m u03a9 @ 2.4A, 10V	No SVHC	-	50mOhm	-	ROHS3 Compliant	6.3 mm	HEXFETu00ae	-	-	GULL WING	DUAL	-	1V	-	SWITCHING	SILICON	25 ns	-	1V @ 250u03bcA	-	4.05mm
IRF7311TRPBF Infineon Technologies	13	-	-	AVALANCHE RATED, ULTRA LOW RESISTANCE	100 mJ	IRF7311PBF	-	-	6.6A	-	6.6A	-	20V	-	-	-	-	EAR99	Dual	12 Weeks	31 ns	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 N-Channel (Dual)	27nC @ 4.5V	12V	1.4986mm	900pF @ 15V	-	-	e3	Lead Free	4.9784mm	-	2W	1 (Unlimited)	Surface Mount	Surface Mount	-	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	-	-	-	2W	-	2004	-	-	No	29m u03a9 @ 6A, 4.5V	No SVHC	77 ns	29mOhm	17ns	ROHS3 Compliant	-	HEXFETu00ae	-	Matte Tin (Sn)	GULL WING	-	-	700mV	-	SWITCHING	SILICON	38 ns	8.1 ns	700mV @ 250u03bcA	20V	3.9878mm
IRF7314TRPBF Infineon Technologies	77	-	-	AVALANCHE RATED	150 mJ	IRF7314PBF	-	Tin	-5.3A	5.3A	-5.3A	-	-20V	20V	-	-	-	EAR99	Dual	12 Weeks	49 ns	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 P-Channel (Dual)	29nC @ 4.5V	12V	1.4986mm	780pF @ 15V	-	-	e3	Lead Free	4.9784mm	-	2W	1 (Unlimited)	Surface Mount	Surface Mount	-700 mV	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	260	-	-	2W	-	1997	-	-	No	58m u03a9 @ 2.9A, 4.5V	No SVHC	71 ns	58mOhm	40ns	ROHS3 Compliant	6.3 mm	HEXFETu00ae	-	-	GULL WING	-	-	-700mV	30	SWITCHING	SILICON	41 ns	15 ns	700mV @ 250u03bcA	-20V	3.9878mm
IRF7316TRPBF Infineon Technologies	2120	-	-	AVALANCHE RATED	140 mJ	IRF7316PBF	-	Tin	-4.9A	4.9A	-4.9A	-	-30V	30V	-	-	-	EAR99	Dual	12 Weeks	32 ns	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 P-Channel (Dual)	34nC @ 10V	20V	1.75mm	710pF @ 25V	-	-	-	Contains Lead, Lead Free	4.9784mm	150u00b0C	2W	1 (Unlimited)	Surface Mount	Surface Mount	-1 V	2	2	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	-	-	-	2W	-	2004	30A	-	No	58m u03a9 @ 4.9A, 10V	No SVHC	66 ns	58mOhm	13ns	ROHS3 Compliant	-	HEXFETu00ae	-	-	GULL WING	-	-	-1V	-	SWITCHING	SILICON	34 ns	13 ns	1V @ 250u03bcA	-30V	3.9878mm
IRF7317TRPBF Infineon Technologies	177	-	-	AVALANCHE RATED, ULTRA LOW RESISTANCE	100 mJ	IRF7317PBF	-	-	6.6A	6.6A 5.3A	6.6A	-	20V	-	-	-	-	EAR99	-	12 Weeks	49 ns	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	N and P-Channel	27nC @ 4.5V	12V	1.4986mm	900pF @ 15V	-	-	e3	Lead Free	4.9784mm	-	2W	1 (Unlimited)	Surface Mount	Surface Mount	700 mV	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	-	N-CHANNEL AND P-CHANNEL	-	2W	-	1997	-	-	No	29m u03a9 @ 6A, 4.5V	No SVHC	-	29mOhm	40ns	ROHS3 Compliant	-	HEXFETu00ae	-	Matte Tin (Sn)	GULL WING	DUAL	-	700mV	-	SWITCHING	SILICON	42 ns	-	700mV @ 250u03bcA	-	3.9878mm
IRF7319TRPBF Infineon Technologies	4527	-	-	AVALANCHE RATED, ULTRA LOW RESISTANCE	-	IRF7319PBF	-	Tin	6.5A	-	6.5A	-	30V	-	-	-	-	EAR99	-	12 Weeks	32 ns	Standard	METAL-OXIDE SEMICONDUCTOR	N and P-Channel	33nC @ 10V	20V	1.4986mm	650pF @ 25V	-	-	-	Contains Lead, Lead Free	4.9784mm	-	2W	1 (Unlimited)	Surface Mount	Surface Mount	1 V	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	-	N-CHANNEL AND P-CHANNEL	-	2W	-	1997	30A	-	No	29m u03a9 @ 5.8A, 10V	No SVHC	-	29mOhm	13ns	ROHS3 Compliant	6.3 mm	HEXFETu00ae	-	-	GULL WING	DUAL	-	1V	-	SWITCHING	SILICON	34 ns	-	1V @ 250u03bcA	-	3.9878mm
IRF7324TRPBF Infineon Technologies	-	-	-	HIGH RELIABILITY	-	IRF7324PBF	-	-	-9A	9A	-9A	9A	-20V	20V	-	-	-	EAR99	Dual	12 Weeks	190 ns	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 P-Channel (Dual)	63nC @ 5V	12V	1.75mm	2940pF @ 15V	-	-	e3	Contains Lead, Lead Free	4.9784mm	150u00b0C	2W	1 (Unlimited)	Surface Mount	Surface Mount	-	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	260	-	-	2W	-	2004	71A	-	No	18m u03a9 @ 9A, 4.5V	No SVHC	270 ns	18mOhm	36ns	ROHS3 Compliant	-	HEXFETu00ae	-	Matte Tin (Sn)	GULL WING	-	-	-1V	30	SWITCHING	SILICON	170 ns	17 ns	1V @ 250u03bcA	-20V	3.9878mm
IRF7328TRPBF Infineon Technologies	750	-	-	ULTRA LOW RESISTANCE	-	IRF7328PBF	-	Tin	-8A	8A	-8A	8A	-30V	30V	-	-	-30V	EAR99	Dual	12 Weeks	98 ns	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 P-Channel (Dual)	78nC @ 10V	20V	1.75mm	2675pF @ 25V	-	-	e3	Lead Free	4.9784mm	150u00b0C	2W	1 (Unlimited)	Surface Mount	Surface Mount	-2.5 V	2	2	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	-	-	-	2W	-	2004	-	-	No	21m u03a9 @ 8A, 10V	No SVHC	56 ns	21MOhm	15ns	ROHS3 Compliant	6.3 mm	HEXFETu00ae	-	-	GULL WING	-	SMD/SMT	-1V	-	SWITCHING	SILICON	198 ns	13 ns	2.5V @ 250u03bcA	-30V	3.9878mm
IRF7329TRPBF Infineon Technologies	20	-	-	-	-	IRF7329PBF	-	-	9.2A	-	-9.2A	-	-12V	12V	0.017Ohm	-	-	-	Dual	12 Weeks	260 ns	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 P-Channel (Dual)	57nC @ 4.5V	8V	1.4986mm	3450pF @ 10V	-	-	-	Lead Free	4.9784mm	-	2W	1 (Unlimited)	Surface Mount	Surface Mount	-	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	-	-	-	2W	-	2004	-	-	No	17m u03a9 @ 9.2A, 4.5V	-	-	-	8.6ns	ROHS3 Compliant	-	HEXFETu00ae	-	-	GULL WING	-	-	-	-	SWITCHING	SILICON	340 ns	10 ns	900mV @ 250u03bcA	-12V	3.9878mm
IRF7331PBF Infineon Technologies	11521	-	-	-	-	IRF7331PBF	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	-	-	7A	-	7A	-	20V	0.03Ohm	20V	-	EAR99	-	-	-	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 N-Channel (Dual)	20nC @ 4.5V	-	-	1340pF @ 16V	MS-012AA	R-PDSO-G8	-	-	-	-	-	1 (Unlimited)	-	Surface Mount	-	2	-	-	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tube	Discontinued	NOT SPECIFIED	-	2W	-	2W	2004	-	Not Qualified	-	30m u03a9 @ 7A, 4.5V	-	-	-	-	ROHS3 Compliant	-	HEXFETu00ae	YES	-	GULL WING	-	-	-	NOT SPECIFIED	SWITCHING	SILICON	-	-	1.2V @ 250u03bcA	-	-
IRF7341TRPBF Infineon Technologies	4000	-	-	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	140 mJ	IRF7341PBF	-	Tin	4.7A	-	4.7A	5.1A	55V	-	-	-	55V	EAR99	Dual	12 Weeks	13 ns	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 N-Channel (Dual)	36nC @ 10V	20V	1.75mm	740pF @ 25V	-	-	e3	Contains Lead, Lead Free	4.9784mm	150u00b0C	2W	1 (Unlimited)	Surface Mount	Surface Mount	1 V	2	2	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	260	-	-	2W	-	2004	-	-	No	50m u03a9 @ 4.7A, 10V	No SVHC	90 ns	50mOhm	3.2ns	ROHS3 Compliant	6.3 mm	HEXFETu00ae	-	-	GULL WING	-	-	1V	30	SWITCHING	SILICON	32 ns	8.3 ns	1V @ 250u03bcA	55V	3.9878mm
IRF7343TRPBF Infineon Technologies	4000	-	-	AVALANCHE RATED, ULTRA LOW RESISTANCE	-	IRF7343PBF	-	Tin	4.7A	4.7A 3.4A	4.7A	-	55V	-	-	-	-	EAR99	-	12 Weeks	22 ns	Standard	METAL-OXIDE SEMICONDUCTOR	N and P-Channel	36nC @ 10V	20V	1.75mm	740pF @ 25V	-	-	e3	Lead Free	4.9784mm	150u00b0C	2W	1 (Unlimited)	Surface Mount	Surface Mount	1 V	2	2	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	-	N-CHANNEL AND P-CHANNEL	-	2W	-	2004	-	-	No	50m u03a9 @ 4.7A, 10V	No SVHC	-	50mOhm	10ns	ROHS3 Compliant	6.3 mm	HEXFETu00ae	-	-	GULL WING	DUAL	-	1V	-	SWITCHING	SILICON	43 ns	8.3 ns	1V @ 250u03bcA	-	3.9878mm
IRF7351TRPBF Infineon Technologies	4000	-	-	-	-	IRF7351PBF	-	-	8A	-	-	8A	60V	60V	-	-	-	EAR99	Dual	12 Weeks	6.7 ns	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 N-Channel (Dual)	36nC @ 10V	20V	1.4986mm	1330pF @ 30V	-	-	e3	Lead Free	4.9784mm	-	2W	1 (Unlimited)	Surface Mount	Surface Mount	-	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	-	-	-	2W	-	2009	64A	-	No	17.8m u03a9 @ 8A, 10V	-	-	-	5.9ns	ROHS3 Compliant	-	HEXFETu00ae	-	Matte Tin (Sn)	GULL WING	-	-	-	-	SWITCHING	SILICON	17 ns	5.1 ns	4V @ 50u03bcA	-	3.9878mm
IRF7380TRPBF Infineon Technologies	3	-	-	-	75 mJ	IRF7380PBF	-	Tin	3.6A	-	3.6A	-	80V	-	-	-	-	EAR99	Dual	12 Weeks	17 ns	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 N-Channel (Dual)	23nC @ 10V	20V	1.4986mm	660pF @ 25V	-	-	e3	Lead Free	4.9784mm	-	2W	1 (Unlimited)	Surface Mount	Surface Mount	4 V	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	260	-	-	2W	-	2008	-	-	No	73m u03a9 @ 2.2A, 10V	No SVHC	-	73MOhm	10ns	ROHS3 Compliant	-	HEXFETu00ae	-	-	GULL WING	-	-	4V	30	SWITCHING	SILICON	41 ns	9 ns	4V @ 250u03bcA	80V	3.9878mm
IRF7506TRPBF Infineon Technologies	1862	-	-	LOGIC LEVEL COMPATIBLE	-	IRF7506PBF	-	-	-1.7A	1.7A	-	-	-30V	30V	-	-	-30V	-	Dual	12 Weeks	9.3 ns	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 P-Channel (Dual)	11nC @ 10V	20V	910u03bcm	180pF @ 25V	-	-	-	Lead Free	3.048mm	-	1.25W	2 (1 Year)	Surface Mount	Surface Mount	-1 V	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-TSSOP, 8-MSOP (0.118, 3.00mm Width)	Tape & Reel (TR)	Not For New Designs	-	-	-	1.25W	-	1997	9.6A	-	No	270m u03a9 @ 1.2A, 10V	No SVHC	-	270mOhm	12ns	ROHS3 Compliant	-	HEXFETu00ae	-	-	GULL WING	-	SMD/SMT	-1V	-	SWITCHING	SILICON	19 ns	9.7 ns	1V @ 250u03bcA	-	3.048mm
IRF7507TRPBF Infineon Technologies	18	-	-	ULTRA LOW RESISTANCE	-	IRF7507PBF	-	-	2.4A	2.4A 1.7A	-	-	20V	-	-	-	-	EAR99	-	12 Weeks	-	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	N and P-Channel	8nC @ 4.5V	12V	860u03bcm	260pF @ 15V	-	-	e3	Lead Free	3mm	-	1.25W	1 (Unlimited)	Surface Mount	Surface Mount	700 mV	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-TSSOP, 8-MSOP (0.118, 3.00mm Width)	Tape & Reel (TR)	Active	260	N-CHANNEL AND P-CHANNEL	-	1.25W	-	1998	19A	-	No	140m u03a9 @ 1.7A, 4.5V	No SVHC	-	270mOhm	-	ROHS3 Compliant	-	HEXFETu00ae	-	Matte Tin (Sn)	GULL WING	DUAL	-	700mV	40	SWITCHING	SILICON	38 ns	-	700mV @ 250u03bcA	-	3mm
IRF7904TRPBF Infineon Technologies	15	-	-	-	-	IRF7904PBF	-	Tin	11A	7.6A 11A	-	-	30V	-	-	-	-	EAR99	Dual	12 Weeks	-	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 N-Channel (Dual)	11nC @ 4.5V	20V	1.4986mm	910pF @ 15V	-	-	e3	Lead Free	4.9784mm	-	2W	1 (Unlimited)	Surface Mount	Surface Mount	-	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	-	-	1.4W 2W	2W	-	2006	-	-	No	16.2m u03a9 @ 7.6A, 10V	-	-	16.2MOhm	-	ROHS3 Compliant	-	HEXFETu00ae	-	-	GULL WING	-	-	-	-	-	SILICON	-	-	2.25V @ 25u03bcA	-	3.9878mm
IRF7907TRPBF Infineon Technologies	4000	-	-	-	15 mJ	IRF7907PBF	-	-	11A	9.1A 11A	-	-	30V	-	-	-	-	EAR99	Dual	12 Weeks	-	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 N-Channel (Dual)	10nC @ 4.5V	20V	1.4986mm	850pF @ 15V	-	-	e3	Lead Free	4.9784mm	-	2W	1 (Unlimited)	Surface Mount	Surface Mount	-	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	260	-	-	2W	-	2008	-	-	No	16.4m u03a9 @ 9.1A, 10V	-	-	-	-	ROHS3 Compliant	-	HEXFETu00ae	-	Matte Tin (Sn)	GULL WING	-	-	-	30	-	SILICON	-	-	2.35V @ 25u03bcA	-	3.9878mm
IRF8313TRPBF Infineon Technologies	995	-	-	-	46 mJ	IRF8313PBF	-	-	9.7A	-	-	-	30V	30V	-	-	-	EAR99	Dual	-	4.2 ns	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 N-Channel (Dual)	9nC @ 4.5V	20V	1.4986mm	760pF @ 15V	-	-	e3	Lead Free	4.9784mm	-	2W	1 (Unlimited)	Surface Mount	Surface Mount	1.8 V	2	-	8	8	ENHANCEMENT MODE	-55u00b0C~175u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Not For New Designs	-	-	-	2W	-	2008	-	-	No	15.5m u03a9 @ 9.7A, 10V	No SVHC	-	15.5MOhm	9.9ns	ROHS3 Compliant	-	HEXFETu00ae	-	Matte Tin (Sn)	GULL WING	-	-	1.8V	-	SWITCHING	SILICON	8.5 ns	8.3 ns	2.35V @ 25u03bcA	-	3.9878mm
IRF8915TRPBF Infineon Technologies	100	-	-	-	-	IRF8915PBF	-	-	8.9A	-	8.9A	-	20V	-	-	-	-	EAR99	Dual	12 Weeks	3.6 ns	Logic Level Gate	METAL-OXIDE SEMICONDUCTOR	2 N-Channel (Dual)	7.4nC @ 4.5V	20V	1.4986mm	540pF @ 10V	-	-	-	Lead Free	4.9784mm	-	2W	1 (Unlimited)	Surface Mount	Surface Mount	-	2	-	8	-	-	-55u00b0C~150u00b0C TJ	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	-	-	-	2W	-	2008	-	-	No	18.3m u03a9 @ 8.9A, 10V	No SVHC	-	18.3MOhm	12ns	ROHS3 Compliant	-	HEXFETu00ae	-	-	-	-	-	2.5V	-	-	-	7.1 ns	6 ns	2.5V @ 250u03bcA	20V	3.9878mm

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