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Infineon Technologies IRF7331PBF
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Infineon Technologies IRF7331PBF

Infineon Technologies

Manufacturer No:

IRF7331PBF

Manufacturer:

Infineon Technologies

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Description:

MOSFET 2N-CH 20V 7A 8-SOIC

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Infineon Technologies IRF7331PBF information

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Infineon Technologies IRF7331PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7331PBF.
ParameterValue
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25u2103 7A
Number of Elements 2
Operating Temperature -55u00b0C~150u00b0C TJ
Packaging Tube
Published 2004
Series HEXFETu00ae
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IRF7331PBF
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 2W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m u03a9 @ 7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250u03bcA
Input Capacitance (Ciss) (Max) @ Vds 1340pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.03Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 2W
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant

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