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ON Semiconductor NDC7002N
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ON Semiconductor NDC7002N

ON Semiconductor

Manufacturer No:

NDC7002N

Manufacturer:

ON Semiconductor

Cybertant No:

-

Package:

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ECAD Model:

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Description:

MOSFET 2N-CH 50V 0.51A SSOT6

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ON Semiconductor NDC7002N information

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ON Semiconductor NDC7002N technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NDC7002N.
ParameterValue
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 36mg
Transistor Element Material SILICON
Number of Elements 2
Turn Off Delay Time 11 ns
Operating Temperature -55u00b0C~150u00b0C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 2Ohm
Voltage - Rated DC 50V
Max Power Dissipation 700mW
Terminal Form GULL WING
Current Rating 350mA
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 960mW
Turn On Delay Time 6 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 u03a9 @ 510mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250u03bcA
Input Capacitance (Ciss) (Max) @ Vds 20pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 1nC @ 10V
Rise Time 6ns
Fall Time (Typ) 6 ns
Continuous Drain Current (ID) 510mA
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.51A
Drain to Source Breakdown Voltage 50V
Dual Supply Voltage 50V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.9 V
Height 900u03bcm
Length 3mm
Width 1.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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