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ON Semiconductor FGL40N120ANDTU
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ON Semiconductor FGL40N120ANDTU

ON Semiconductor

Manufacturer No:

FGL40N120ANDTU

Manufacturer:

ON Semiconductor

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Description:

Trans IGBT Chip N-CH 1.2KV 64A 3-Pin(3 Tab) TO-264 Rail

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ON Semiconductor FGL40N120ANDTU information

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ON Semiconductor FGL40N120ANDTU technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor FGL40N120ANDTU.
ParameterValue
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Weight 6.756g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 3.15V
Number of Elements 1
Test Conditions 600V, 40A, 5 u03a9, 15V
Turn Off Delay Time 110 ns
Operating Temperature -55u00b0C~150u00b0C TJ
Packaging Tube
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.29.00.95
Voltage - Rated DC 1.2kV
Max Power Dissipation 500W
Current Rating 64A
Element Configuration Single
Power Dissipation 500W
Input Type Standard
Turn On Delay Time 15 ns
Transistor Application POWER CONTROL
Rise Time 20ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 64A
Reverse Recovery Time 112 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 45 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 40A
Max Junction Temperature (Tj) 150u00b0C
Continuous Collector Current 64A
Turn Off Time-Nom (toff) 165 ns
IGBT Type NPT
Gate Charge 220nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25u00b0C 15ns/110ns
Switching Energy 2.3mJ (on), 1.1mJ (off)
Height 29mm
Length 20mm
Width 5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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