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Infineon Technologies IRFP260NPBF

Infineon Technologies

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IRFP260NPBF

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Infineon Technologies

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Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.04 Ohm; Id 50A; TO-247AC; Pd 300W; Vgs /-20V

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Infineon Technologies IRFP260NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFP260NPBF.

Parameter	Value
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25u2103	50A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	300W Tc
Turn Off Delay Time	55 ns
Operating Temperature	-55u00b0C~175u00b0C TJ
Packaging	Bulk
Published	2004
Series	HEXFETu00ae
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	40mOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC	200V
Peak Reflow Temperature (Cel)	250
Current Rating	50A
Time@Peak Reflow Temperature-Max (s)	30
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	17 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m u03a9 @ 28A, 10V
Vgs(th) (Max) @ Id	4V @ 250u03bcA
Input Capacitance (Ciss) (Max) @ Vds	4057pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	234nC @ 10V
Rise Time	60ns
Vgs (Max)	u00b120V
Fall Time (Typ)	48 ns
Continuous Drain Current (ID)	50A
Threshold Voltage	4V
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	200A
Dual Supply Voltage	200V
Avalanche Energy Rating (Eas)	560 mJ
Recovery Time	402 ns
Nominal Vgs	4 V
Height	20.2946mm
Length	15.875mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free