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ON Semiconductor NTD2955T4G

ON Semiconductor

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NTD2955T4G

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ON Semiconductor

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Trans MOSFET P-CH 60V 12A 3-Pin(2 Tab) DPAK T/R

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ON Semiconductor NTD2955T4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD2955T4G.

Parameter	Value
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25u2103	12A Ta
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	55W Tj
Turn Off Delay Time	26 ns
Operating Temperature	-55u00b0C~175u00b0C TJ
Packaging	Cut Tape (CT)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	180mOhm
Voltage - Rated DC	-60V
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-12A
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Channels	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	55W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	180m u03a9 @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250u03bcA
Input Capacitance (Ciss) (Max) @ Vds	750pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	45ns
Drain to Source Voltage (Vdss)	60V
Vgs (Max)	u00b120V
Fall Time (Typ)	48 ns
Continuous Drain Current (ID)	12A
Threshold Voltage	-2.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-60V
Nominal Vgs	-2.8 V
Height	2.38mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free