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Microchip Technology APTGT50DDA60T3G
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Microchip Technology APTGT50DDA60T3G

Microchip Technology

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APTGT50DDA60T3G

Manufacturer:

Microchip Technology

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Description:

IGBT Modules DOR CC3175View in Development Tools Selector

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Microchip Technology APTGT50DDA60T3G information

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Microchip Technology APTGT50DDA60T3G technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology APTGT50DDA60T3G.
ParameterValue
Lifecycle Status Production (Last Updated: 2 months ago)
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3-32
Number of Pins 32
Supplier Device Package SP3
Base Product Number APTGT50
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Breakdown Voltage 600 V
Collector-Emitter Saturation Voltage 1.5 V
Continuous Collector Current at 25 C 80 A
Current-Collector (Ic) (Max) 80 A
Factory Pack QuantityFactory Pack Quantity 1
Gate-Emitter Leakage Current 600 nA
Maximum Gate Emitter Voltage 20 V
Maximum Operating Temperature + 100 C
Mfr Microchip Technology
Minimum Operating Temperature - 40 C
Mounting Styles Chassis Mount
Package Bulk
Pd - Power Dissipation 176 W
Product Status Active
RoHS Details
Operating Temperature -40u00b0C ~ 175u00b0C (TJ)
Packaging Tube
Series -
Max Operating Temperature 175 u00b0C
Min Operating Temperature -40 u00b0C
Max Power Dissipation 176 W
Configuration Dual
Element Configuration Dual
Power - Max 176 W
Input Standard
Collector Emitter Voltage (VCEO) 600 V
Max Collector Current 80 A
Current - Collector Cutoff (Max) 250 u00b5A
Voltage - Collector Emitter Breakdown (Max) 600 V
Input Capacitance 3.15 nF
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
Continuous Collector Current 80
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 3.15 nF @ 25 V
Product IGBT Silicon Modules
Radiation Hardening No

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