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IXYS IXDN55N120D1
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IXYS IXDN55N120D1

IXYS

Manufacturer No:

IXDN55N120D1

Manufacturer:

IXYS

Cybertant No:

-

Package:

-

Datasheet:

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ECAD Model:

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Description:

Trans IGBT Chip N-CH 1.2KV 100A 4-Pin SOT-227B

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In Stock : 1000

Minimum: 1 Multiples: 1

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FedEx International, 5-7 business days.

The following are some common countries' logistic time. transport
  • Prepare productStep1:Prepare product
  • Vacuum packagingStep2:Vacuum packaging
  • Anti-static bagStep3:Anti-static bag
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IXYS IXDN55N120D1 information

Specifications
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IXYS IXDN55N120D1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXDN55N120D1.
ParameterValue
Factory Lead Time 28 Weeks
Mount Chassis Mount, Screw, Surface Mount
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Weight 38.000013g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 2.3V
Number of Elements 1
Turn Off Delay Time 500 ns
Operating Temperature -40u00b0C~150u00b0C TJ
Published 2007
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Nickel (Ni)
Additional Feature UL RECOGNIZED
Max Power Dissipation 450W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
Configuration Single
Case Connection ISOLATED
Turn On Delay Time 100 ns
Power - Max 450W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 100A
Current - Collector Cutoff (Max) 3.8mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 3.3nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 55A
Turn Off Time-Nom (toff) 570 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 3.3nF @ 25V
Gate-Emitter Thr Voltage-Max 6.5V
Height 9.6mm
Length 38.2mm
Width 25.07mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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