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Microchip Technology APTGL475U120DAG
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Microchip Technology APTGL475U120DAG

Microchip Technology

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APTGL475U120DAG

Manufacturer:

Microchip Technology

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IGBT Modules CC6171View in Development Tools Selector

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Microchip Technology APTGL475U120DAG information

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Microchip Technology APTGL475U120DAG technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology APTGL475U120DAG.
ParameterValue
Mounting Type Chassis Mount
Package / Case SP6
Supplier Device Package SP6
Base Product Number APTGL475
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 1.8 V
Continuous Collector Current at 25 C 610 A
Current-Collector (Ic) (Max) 610 A
Factory Pack QuantityFactory Pack Quantity 1
Ihs Manufacturer MICROSEMI CORP
Manufacturer Part Number APTGL475U120DAG
Maximum Gate Emitter Voltage 20 V
Maximum Operating Temperature + 100 C
Mfr Microchip Technology
Minimum Operating Temperature - 40 C
Mounting Styles Chassis Mount
Number of Elements 1
Operating Temperature-Max 175 u00b0C
Package Bulk
Part Life Cycle Code Active
Pd - Power Dissipation 2.307 kW
Product Status Active
Risk Rank 5.69
RoHS Details
Rohs Code Yes
Unit Weight 3.880136 oz
Operating Temperature -40u00b0C ~ 175u00b0C (TJ)
Packaging Tube
Series -
ECCN Code EAR99
Reach Compliance Code compliant
Configuration Single
Power Dissipation 2.307
Power - Max 2307 W
Input Standard
Current - Collector Cutoff (Max) 4 mA
Voltage - Collector Emitter Breakdown (Max) 1200 V
Power Dissipation-Max (Abs) 2307 W
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 400A
Collector Current-Max (IC) 610 A
Continuous Collector Current 610
IGBT Type Trench Field Stop
Collector-Emitter Voltage-Max 1200 V
NTC Thermistor No
Gate-Emitter Voltage-Max 20 V
Input Capacitance (Cies) @ Vce 24.6 nF @ 25 V
VCEsat-Max 2.2 V
Product IGBT Silicon Modules

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