Specialized Transistors – Cybertant Technology

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AMI Semiconductor (1)

Allegro (1)

Alpha & Omega Semiconductor (1)

Analog Devices (1)

Analog Devices Inc./Maxim Integrated (1)

Diodes (1)

Diodes Incorporated (11)

Foshan Blue Rocket Elec (1)

Freescale Semiconductor (2)

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Leshan (1)

Motorola Mobility LLC (1)

NTE Electronics, Inc (2)

NXP (9)

NXP Semiconductors (3)

NXP USA Inc. (3)

Nexperia USA Inc. (19)

ON Semiconductor (18)

Panasonic Electronic Components (2)

Philips Semiconductors (1)

Rochester Electronics, LLC (1)

Rohm Semiconductor (8)

STMicroelectronics (6)

Sanyo (2)

Transys Electronics Limited (1)

Unisonic Technologies Co Ltd (1)
Access Time
18 ns (1)
Additional Feature
BUILT IN BIAS RESISTOR (1)

LOGIC LEVEL COMPATIBLE (1)

BUILT IN BIAS RESISTOR RATIO IS 1 (1)

BUILT-IN BIAS RESISTOR RATIO IS 1 (1)
Applications
Load Switch (3)

General Purpose (8)
Avalanche Energy Rating (Eas)
80 mJ (1)
Base Part Number
LMN400 (2)

MLD1N06C (2)

NSTB1005DXV5 (2)

NUS5530MN (1)

PBSM5240PF (2)

PMC85 (1)
Base Product Number
HV73V1J (1)
Case Connection
SOURCE (1)

COLLECTOR (3)

DRAIN (1)
Clock Frequency
1.2 GHz (1)
Collector Base Voltage (VCBO)
50V (2)

-55V (1)
Collector Current-Max (IC)
0.4A (2)

0.1 A (1)

0.1A (2)

2 A (1)

5 A (1)

2A (1)
Collector Emitter Voltage (VCEO)
50V (2)

35V (1)
Collector-Emitter Saturation Voltage
250mV (2)

-100mV (1)
Collector-Emitter Voltage-Max
50 V (2)

40V (1)
Composition
Thick Film (1)
Configuration
SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR (2)

Single (1)

SINGLE (1)

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR (2)

SINGLE WITH BUILT-IN FET AND DIODE (1)
Continuous Drain Current (ID)
1A (1)

-3.9A (1)

5.47A (1)

660mA (1)

1.8A (1)
Current Rating
115mA (2)

1A (2)

100mA (2)

3.9A (1)

5.47A (1)

1.8A (2)

2.6A (1)
Current Rating (Amps)
400mA PNP 115mA (2)

2A (1)

5A (1)

2A PNP 3.9A P-Channel (1)

2A PNP 5.47A P-Channel (1)

1.8A PNP 660mA N-Channel (2)
DC Current Gain-Min (hFE)
70 (2)

80 (3)

1000 (2)

100 (1)

150 (1)

140 (1)
Drain Current-Max (Abs) (ID)
0.115A (1)

0.3A (1)

1A (1)

4 A (1)

4.4A (1)
Drain Current-Max (ID)
4 A (1)
Drain to Source Breakdown Voltage
59V (1)

12V (1)

30V (1)
Drain to Source Resistance
750mOhm (1)

200Ohm (1)

32mOhm (1)

370mOhm (1)

580mOhm (1)
Drain to Source Voltage (Vdss)
62V (1)

40V (1)

-30V (1)
Drain-source On Resistance-Max
2Ohm (1)

1.125Ohm (1)
DS Breakdown Voltage-Min
40 V (1)

20V (1)
ECCN Code
EAR99 (12)
Element Configuration
Single (2)

Dual (3)
Emitter Base Voltage (VEBO)
-5V (1)
Factory Lead Time
19 Weeks (2)

17 Weeks (1)

2 Weeks (1)

8 Weeks (3)
Fall Time (Typ)
3 ns (1)

17.5 ns (1)

4.5 ns (1)
Fall Time-Max (tf)
70ns (1)
Features
Automotive AEC-Q200, High Voltage, Moisture Resistant (1)
Feedback Cap-Max (Crss)
5 pF (2)
FET Technology
METAL-OXIDE SEMICONDUCTOR (7)
Gate to Source Voltage (Vgs)
10V (1)

-35V (1)

8V (2)

700mV (1)
Halogen Free
Halogen Free (2)
Height
950u03bcm (1)
Height Seated (Max)
0.022 (0.55mm) (1)
hFEMin
80 (2)
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND (1)
HTS Code
8541.29.00.75 (1)
Ihs Manufacturer
LESHAN RADIO CO LTD (1)

MOTOROLA SEMICONDUCTOR PRODUCTS (1)

MOTOROLA INC (1)

NTE ELECTRONICS INC (2)
JEDEC-95 Code
TO-220AB (2)
JESD-30 Code
R-PSSO-G2 (1)

R-PQCC-N4 (1)

R-PSFM-T3 (2)
JESD-609 Code
e3 (10)
Lead Free
Lead Free (8)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant (1)
Length
3.3mm (1)
Lifecycle Status
OBSOLETE (Last Updated: 14 hours ago) (1)

OBSOLETE (Last Updated: 1 week ago) (2)

ACTIVE (Last Updated: 4 days ago) (1)

ACTIVE (Last Updated: 5 days ago) (1)
Manufacturer
LRC Leshan Radio Co Ltd (1)

NTE Electronics (2)
Manufacturer Package Code
CASE 466-02 (1)
Manufacturer Part Number
LMUN5313DW1T1G (1)

NTE2332 (1)

NTE2334 (1)
Max Collector Current
2A (1)
Max Dual Supply Voltage
-30V (1)
Max Frequency
100MHz (1)
Max Operating Temperature
150u00b0C (9)
Max Power Dissipation
40W (1)

357mW (2)

2.5W (1)

1.1W (1)
Memory Format
DRAM (1)
Memory Interface
POD (1)
Memory Organization
256M x 16 (1)
Memory Size
4Gbit (1)
Memory Types
Volatile (1)
Mfr
Analog Devices Inc./Maxim Integrated (1)

Freescale Semiconductor (1)

Alliance Memory, Inc. (1)

NTE Electronics, Inc (2)

KOA Speer Electronics, Inc. (1)
Min Operating Temperature
-55u00b0C (8)

-65u00b0C (1)
Moisture Sensitivity Level (MSL)
1 (Unlimited) (11)
Mount
Surface Mount (6)
Mounting Type
Surface Mount (12)

Through Hole (2)
Nominal Vgs
1.5 V (1)
Number of Elements
1 (9)

2 (3)
Number of Channels
2 (1)
Number of Pins
6 (5)

3 (1)

5 (2)

8 (2)
Number of Terminals
4 (1)

3 (2)
Number of Terminations
6 (3)

2 (2)

5 (2)

8 (2)
Operating Mode
ENHANCEMENT MODE (6)
Operating Temperature
0u00b0C ~ 95u00b0C (TC) (1)

-55u00b0C ~ 155u00b0C (1)
Operating Temperature-Max
150 u00b0C (2)
Other Names
MLD1N06CLT4GOS MLD1N06CLT4GOS-ND MLD1N06CLT4GOSTR (1)
Package
Bulk (2)

Tape & Reel (TR) (2)

Bag (2)
Package / Case
SOT-23-6 (1)

6-TSSOP, SC-88, SOT-363 (1)

TO-252-3, DPak (2 Leads + Tab), SC-63 (2)

96-TFBGA (1)

SOT-553 (2)

TO-220-3 (2)

8-VDFN Exposed Pad (1)

8-WDFN Exposed Pad (1)

6-UDFN Exposed Pad (3)

0603 (1608 Metric) (1)
Package Body Material
PLASTIC/EPOXY (3)
Package Description
, (2)

CHIP CARRIER, R-PQCC-N4 (1)

TO-220, 3 PIN (2)
Package Shape
RECTANGULAR (3)
Package Style
CHIP CARRIER (1)

FLANGE MOUNT (2)
Packaging
Tape & Reel (TR) (11)
Part Life Cycle Code
Contact Manufacturer (1)

Obsolete (1)

Transferred (1)

Active (2)
Part Package Code
SFM (2)
Part Status
Active (7)

Obsolete (3)
Pbfree Code
yes (7)
Peak Reflow Temperature (Cel)
260 (5)

NOT SPECIFIED (2)
Pin Count
6 (5)

3 (3)

4 (1)

5 (2)

8 (2)
Polarity
PNP (2)

NPN, PNP (1)
Polarity/Channel Type
NPN/PNP (1)

N-CHANNEL (2)

NPN (2)

PNP (1)
Power (Watts)
0.1W, 1/10W (1)
Power Dissipation
40W (1)

635mW (1)

1.46W (1)

1.1W (1)
Power Dissipation Ambient-Max
20 W (1)

40 W (1)
Power Dissipation-Max (Abs)
0.3W (1)

0.2W (1)

0.385 W (1)

20 W (1)

40 W (1)
Product Status
Active (6)
Published
2015 (1)

2006 (3)

2009 (1)

2007 (1)

2008 (1)

2010 (2)

2013 (1)
Pulsed Drain Current-Max (IDM)
20A (1)
Qualification Status
Not Qualified (6)
Radiation Hardening
No (5)
Ratings
AEC-Q200 (1)
Reach Compliance Code
unknown (6)
REACH SVHC
No SVHC (1)
Resistance
750MOhm (1)

300 kOhms (1)
Rise Time
4ns (1)

17.5ns (1)

7.5ns (1)
Rise Time-Max
55ns (1)
Risk Rank
5.74 (1)

1.76 (1)

1.75 (1)
RoHS
Compliant (1)
Rohs Code
Yes (1)
RoHS Status
ROHS3 Compliant (7)

RoHS Compliant (2)

Non-RoHS Compliant (1)
Series
* (2)

SMARTDISCRETESu2122 (2)

HV73V (1)
Size / Dimension
0.063 L x 0.031 W (1.60mm x 0.80mm) (1)
Subcategory
BIP General Purpose Small Signal (1)

Other Transistors (2)
Supplier Device Package
DPAK (1)

96-FBGA (7.5x13.5) (1)

TO-220 (1)

0603 (1)
Surface Mount
YES (5)

NO (2)
Technology
SDRAM - DDR4 (1)
Temperature Coefficient
u00b1100ppm/u00b0C (1)
Terminal Finish
Matte Tin (Sn) (2)

Tin (Sn) (8)
Terminal Form
GULL WING (3)

NO LEAD (1)

FLAT (2)

THROUGH-HOLE (2)
Terminal Position
DUAL (4)

QUAD (1)

SINGLE (2)
Threshold Voltage
1.5V (1)
Time@Peak Reflow Temperature-Max (s)
40 (4)

NOT SPECIFIED (3)
Tolerance
u00b12% (1)
Transistor Application
SWITCHING (10)

AMPLIFIER (1)
Transistor Element Material
SILICON (5)
Transistor Type
PNP Pre-Biased, N-Channel Pre-Biased (2)

NPN, N-Channel Gate-Drain, Source Clamp (2)

1 NPN, 1 PNP - Pre-Biased (Dual) (2)

NPN - Darlington (2)

NPN, P-Channel (1)

PNP, P-Channel (1)

PNP, N-Channel (2)

NPN Pre-Biased, P-Channel (1)
Transition Frequency
150MHz (1)
Transition Frequency-Nom (fT)
180 MHz (1)

20 MHz (1)
Turn Off Delay Time
4 ns (1)

80 ns (1)

18 ns (1)
Turn On Delay Time
1.2 ns (1)

8 ns (1)

4 ns (1)
VCEsat-Max
0.3 V (2)
Voltage - Rated DC
-50V (2)

62V (1)

50V (2)
Voltage - Supply
1.14V ~ 1.26V (1)
Voltage Rated
65V (1)

35V PNP 20V P-Channel (1)

20V PNP 12V P-Channel (1)

40V PNP 30V N-Channel (2)

30V (1)
Weight
6.010099mg (1)
Width
3.3mm (1)
Write Cycle Time - Word, Page
15ns (1)

Categories

Specialized Transistors

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100 Results

Product	Inventory	Pricing(USD)	Datasheet	RoHS	Access Time	Additional Feature	Applications	Avalanche Energy Rating (Eas)	Base Part Number	Base Product Number	Case Connection	Clock Frequency	Collector Base Voltage (VCBO)	Collector Current-Max (IC)	Collector Emitter Voltage (VCEO)	Collector-Emitter Saturation Voltage	Collector-Emitter Voltage-Max	Composition	Configuration	Continuous Drain Current (ID)	Current Rating	Current Rating (Amps)	DC Current Gain-Min (hFE)	Drain Current-Max (Abs) (ID)	Drain Current-Max (ID)	Drain to Source Breakdown Voltage	Drain to Source Resistance	Drain to Source Voltage (Vdss)	Drain-source On Resistance-Max	DS Breakdown Voltage-Min	ECCN Code	Element Configuration	Emitter Base Voltage (VEBO)	Factory Lead Time	Fall Time (Typ)	Fall Time-Max (tf)	Features	Feedback Cap-Max (Crss)	FET Technology	Gate to Source Voltage (Vgs)	Halogen Free	Height	Height Seated (Max)	hFEMin	Highest Frequency Band	HTS Code	Ihs Manufacturer	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Lead Free	Lead Free Status / RoHS Status	Length	Lifecycle Status	Manufacturer	Manufacturer Package Code	Manufacturer Part Number	Max Collector Current	Max Dual Supply Voltage	Max Frequency	Max Operating Temperature	Max Power Dissipation	Memory Format	Memory Interface	Memory Organization	Memory Size	Memory Types	Mfr	Min Operating Temperature	Moisture Sensitivity Level (MSL)	Mount	Mounting Type	Nominal Vgs	Number of Elements	Number of Channels	Number of Pins	Number of Terminals	Number of Terminations	Operating Mode	Operating Temperature	Operating Temperature-Max	Other Names	Package	Package / Case	Package Body Material	Package Description	Package Shape	Package Style	Packaging	Part Life Cycle Code	Part Package Code	Part Status	Pbfree Code	Peak Reflow Temperature (Cel)	Pin Count	Polarity	Polarity/Channel Type	Power (Watts)	Power Dissipation	Power Dissipation Ambient-Max	Power Dissipation-Max (Abs)	Product Status	Published	Pulsed Drain Current-Max (IDM)	Qualification Status	Radiation Hardening	Ratings	Reach Compliance Code	REACH SVHC	Resistance	Rise Time	Rise Time-Max	Risk Rank	RoHS	Rohs Code	RoHS Status	Series	Size / Dimension	Subcategory	Supplier Device Package	Surface Mount	Technology	Temperature Coefficient	Terminal Finish	Terminal Form	Terminal Position	Threshold Voltage	Time@Peak Reflow Temperature-Max (s)	Tolerance	Transistor Application	Transistor Element Material	Transistor Type	Transition Frequency	Transition Frequency-Nom (fT)	Turn Off Delay Time	Turn On Delay Time	VCEsat-Max	Voltage - Rated DC	Voltage - Supply	Voltage Rated	Weight	Width	Write Cycle Time - Word, Page
LMN400B01-7 Diodes Incorporated	9000	-	-		-	BUILT IN BIAS RESISTOR	Load Switch	-	LMN400	-	-	-	-	0.4A	-	-	-	-	SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR	-	115mA	400mA PNP 115mA	70	0.115A	-	-	-	-	2Ohm	-	EAR99	-	-	19 Weeks	-	-	-	5 pF	METAL-OXIDE SEMICONDUCTOR	-	-	-	-	-	-	-	-	-	-	e3	Lead Free	-	-	-	-	-	-	-	-	-	150u00b0C	-	-	-	-	-	-	-	-55u00b0C	1 (Unlimited)	Surface Mount	Surface Mount	-	1	-	6	-	6	ENHANCEMENT MODE	-	-	-	-	SOT-23-6	-	-	-	-	Tape & Reel (TR)	-	-	Active	yes	260	6	-	-	-	-	-	0.3W	-	2015	-	Not Qualified	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	-	-	-	-	-	Matte Tin (Sn)	GULL WING	DUAL	-	40	-	SWITCHING	-	PNP Pre-Biased, N-Channel Pre-Biased	-	-	-	-	0.3 V	-50V	-	-	-	-	-
LMN400E01-7 Diodes Incorporated	-	-	-		-	-	Load Switch	-	LMN400	-	-	-	-	0.4A	-	-	-	-	SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR	-	115mA	400mA PNP 115mA	70	0.3A	-	-	-	-	1.125Ohm	-	EAR99	-	-	19 Weeks	-	-	-	5 pF	METAL-OXIDE SEMICONDUCTOR	-	-	-	-	-	-	-	-	-	-	e3	Lead Free	-	-	-	-	-	-	-	-	-	150u00b0C	-	-	-	-	-	-	-	-55u00b0C	1 (Unlimited)	Surface Mount	Surface Mount	-	1	-	6	-	6	ENHANCEMENT MODE	-	-	-	-	6-TSSOP, SC-88, SOT-363	-	-	-	-	Tape & Reel (TR)	-	-	Active	yes	260	6	PNP	-	-	-	-	0.2W	-	2006	-	Not Qualified	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	-	-	-	-	-	Matte Tin (Sn)	GULL WING	DUAL	-	40	-	SWITCHING	-	PNP Pre-Biased, N-Channel Pre-Biased	-	-	-	-	-	-50V	-	-	6.010099mg	-	-
LMUN5313DW1T1G Leshan	-	-	-	-	-	-	-	-	-	-	-	-	-	0.1 A	-	-	-	-	-	-	-	-	80	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	LESHAN RADIO CO LTD	-	-	-	-	-	-	-	LRC Leshan Radio Co Ltd	-	LMUN5313DW1T1G	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2	-	-	-	-	-	-	-	-	-	-	-	,	-	-	-	Contact Manufacturer	-	-	-	NOT SPECIFIED	-	-	NPN/PNP	-	-	-	0.385 W	-	-	-	-	-	-	unknown	-	-	-	-	5.74	-	Yes	-	-	-	BIP General Purpose Small Signal	-	YES	-	-	-	-	-	-	NOT SPECIFIED	-	-	SILICON	-	-	-	-	-	-	-	-	-	-	-	-
MAX14612ETE Analog Devices Inc./Maxim Integrated	-	-	-		-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Analog Devices Inc./Maxim Integrated	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	Compliant	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MLD1N06CLT4G ON Semiconductor	12500	-	-		-	LOGIC LEVEL COMPATIBLE	General Purpose	80 mJ	MLD1N06C	-	-	-	-	-	-	-	-	-	-	1A	1A	-	-	1A	-	59V	750mOhm	62V	-	-	EAR99	Single	-	-	3 ns	-	-	-	METAL-OXIDE SEMICONDUCTOR	10V	Halogen Free	-	-	-	-	-	-	-	R-PSSO-G2	e3	Lead Free	-	-	OBSOLETE (Last Updated: 14 hours ago)	-	-	-	-	-	-	150u00b0C	40W	-	-	-	-	-	-	-55u00b0C	1 (Unlimited)	-	Surface Mount	1.5 V	1	-	3	-	2	ENHANCEMENT MODE	-	-	-	-	TO-252-3, DPak (2 Leads + Tab), SC-63	-	-	-	-	Tape & Reel (TR)	-	-	Obsolete	yes	260	3	-	-	-	40W	-	-	-	2006	-	-	No	-	-	No SVHC	750MOhm	4ns	-	-	-	-	RoHS Compliant	SMARTDISCRETESu2122	-	-	-	YES	-	-	Tin (Sn)	GULL WING	-	1.5V	40	-	SWITCHING	-	NPN, N-Channel Gate-Drain, Source Clamp	-	-	4 ns	1.2 ns	-	62V	-	-	-	-	-
MLD1N06CLT4G AMI Semiconductor	-	-	-	-	-	-	General Purpose	-	MLD1N06C	-	-	-	-	-	-	-	-	-	-	-	1A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Lead free / RoHS Compliant	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1 (Unlimited)	-	Surface Mount	-	-	-	-	-	-	-	-	-	MLD1N06CLT4GOS MLD1N06CLT4GOS-ND MLD1N06CLT4GOSTR	-	TO-252-3, DPak (2 Leads + Tab), SC-63	-	-	-	-	Tape & Reel (TR)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SMARTDISCRETESu2122	-	-	DPAK	-	-	-	-	-	-	-	-	-	-	-	NPN, N-Channel Gate-Drain, Source Clamp	-	-	-	-	-	-	-	65V	-	-	-
MRF1508 Freescale Semiconductor	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Single	-	-	-	-	4 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	METAL-OXIDE SEMICONDUCTOR	-	-	-	-	-	-	-	MOTOROLA SEMICONDUCTOR PRODUCTS	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	150 u00b0C	-	-	-	-	,	-	-	-	Obsolete	-	-	-	-	-	-	N-CHANNEL	-	-	-	-	-	-	-	-	-	-	unknown	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MRF1508 Motorola Mobility LLC	-	-	-	-	-	-	-	-	-	-	SOURCE	-	-	-	-	-	-	-	SINGLE	-	-	-	-	-	4 A	-	-	-	-	40 V	EAR99	-	-	-	-	-	-	-	METAL-OXIDE SEMICONDUCTOR	-	-	-	-	-	ULTRA HIGH FREQUENCY BAND	-	MOTOROLA INC	-	R-PQCC-N4	-	-	-	-	-	-	CASE 466-02	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	4	-	ENHANCEMENT MODE	-	150 u00b0C	-	-	-	PLASTIC/EPOXY	CHIP CARRIER, R-PQCC-N4	RECTANGULAR	CHIP CARRIER	-	Transferred	-	-	-	-	4	-	N-CHANNEL	-	-	-	-	-	-	-	Not Qualified	-	-	unknown	-	-	-	-	-	-	-	-	-	-	-	-	YES	-	-	-	NO LEAD	QUAD	-	-	-	AMPLIFIER	SILICON	-	-	-	-	-	-	-	-	-	-	-	-
MRF9080R5 Freescale Semiconductor	200	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Freescale Semiconductor	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Bulk	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MRF9080R5 NXP	-	-	-	-	18 ns	-	-	-	-	-	-	1.2 GHz	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	DRAM	POD	256M x 16	4Gbit	Volatile	Alliance Memory, Inc.	-	-	-	Surface Mount	-	-	-	-	-	-	-	0u00b0C ~ 95u00b0C (TC)	-	-	Tape & Reel (TR)	96-TFBGA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	96-FBGA (7.5x13.5)	-	SDRAM - DDR4	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.14V ~ 1.26V	-	-	-	15ns
NSTB1005DXV5T1 ON Semiconductor	-	-	-	-	-	BUILT IN BIAS RESISTOR RATIO IS 1	-	-	NSTB1005DXV5	-	-	-	50V	0.1A	50V	250mV	-	-	-	-	100mA	-	80	-	-	-	-	-	-	-	EAR99	Dual	-	-	-	-	-	-	-	-	-	-	-	80	-	-	-	-	-	e3	Lead Free	-	-	OBSOLETE (Last Updated: 1 week ago)	-	-	-	-	-	-	-	357mW	-	-	-	-	-	-	-	1 (Unlimited)	Surface Mount	Surface Mount	-	2	-	5	-	5	-	-	-	-	-	SOT-553	-	-	-	-	Tape & Reel (TR)	-	-	Obsolete	yes	260	5	PNP	-	-	-	-	-	-	2009	-	Not Qualified	-	-	unknown	-	-	-	-	-	-	-	Non-RoHS Compliant	-	-	-	-	-	-	-	Tin (Sn)	FLAT	-	-	NOT SPECIFIED	-	SWITCHING	SILICON	1 NPN, 1 PNP - Pre-Biased (Dual)	-	-	-	-	-	50V	-	-	-	-	-
NSTB1005DXV5T1G ON Semiconductor	26000	-	-		-	BUILT-IN BIAS RESISTOR RATIO IS 1	-	-	NSTB1005DXV5	-	-	-	50V	0.1A	50V	250mV	-	-	-	-	100mA	-	80	-	-	-	-	-	-	-	EAR99	Dual	-	17 Weeks	-	-	-	-	-	-	-	-	-	80	-	-	-	-	-	e3	Lead Free	-	-	ACTIVE (Last Updated: 4 days ago)	-	-	-	-	-	-	150u00b0C	357mW	-	-	-	-	-	-	-55u00b0C	1 (Unlimited)	-	Surface Mount	-	2	-	5	-	5	-	-	-	-	-	SOT-553	-	-	-	-	Tape & Reel (TR)	-	-	Active	yes	-	5	NPN, PNP	-	-	-	-	-	-	2007	-	-	No	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	-	-	YES	-	-	Tin (Sn)	FLAT	-	-	-	-	SWITCHING	-	1 NPN, 1 PNP - Pre-Biased (Dual)	-	-	-	-	-	50V	-	-	-	-	-
NTE2332 NTE Electronics, Inc	-	-	-	-	-	-	General Purpose	-	-	-	COLLECTOR	-	-	2 A	-	-	50 V	-	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	-	-	2A	1000	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NTE ELECTRONICS INC	TO-220AB	R-PSFM-T3	-	-	-	-	-	NTE Electronics	-	NTE2332	-	-	-	-	-	-	-	-	-	-	NTE Electronics, Inc	-	-	-	Through Hole	-	1	-	-	3	-	-	-	-	-	Bag	TO-220-3	PLASTIC/EPOXY	TO-220, 3 PIN	RECTANGULAR	FLANGE MOUNT	-	Active	SFM	-	-	-	3	-	NPN	-	-	20 W	20 W	Active	-	-	Not Qualified	-	-	unknown	-	-	-	-	1.76	-	-	-	-	-	Other Transistors	-	NO	-	-	-	THROUGH-HOLE	SINGLE	-	-	-	SWITCHING	SILICON	NPN - Darlington	-	180 MHz	-	-	-	-	-	-	-	-	-
NTE2334 NTE Electronics, Inc	-	-	-	-	-	-	General Purpose	-	-	-	COLLECTOR	-	-	5 A	-	-	50 V	-	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	-	-	5A	1000	-	-	-	-	-	-	-	EAR99	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NTE ELECTRONICS INC	TO-220AB	R-PSFM-T3	-	-	-	-	-	NTE Electronics	-	NTE2334	-	-	-	-	-	-	-	-	-	-	NTE Electronics, Inc	-	-	-	Through Hole	-	1	-	-	3	-	-	-	-	-	Bag	TO-220-3	PLASTIC/EPOXY	TO-220, 3 PIN	RECTANGULAR	FLANGE MOUNT	-	Active	SFM	-	-	-	3	-	NPN	-	-	40 W	40 W	Active	-	-	Not Qualified	-	-	unknown	-	-	-	-	1.75	-	-	-	-	-	Other Transistors	TO-220	NO	-	-	-	THROUGH-HOLE	SINGLE	-	-	-	SWITCHING	SILICON	NPN - Darlington	-	20 MHz	-	-	-	-	-	-	-	-	-
NUS5530MNR2G ON Semiconductor	200	-	-		-	-	General Purpose	-	NUS5530MN	-	-	-	-55V	-	35V	-100mV	-	-	-	-3.9A	3.9A	2A PNP 3.9A P-Channel	100	-	-	-	200Ohm	-	-	20V	EAR99	Dual	-5V	2 Weeks	-	70ns	-	-	METAL-OXIDE SEMICONDUCTOR	-35V	Halogen Free	950u03bcm	-	-	-	-	-	-	-	e3	Lead Free	-	3.3mm	ACTIVE (Last Updated: 5 days ago)	-	-	-	2A	-	100MHz	150u00b0C	2.5W	-	-	-	-	-	-	-55u00b0C	1 (Unlimited)	-	Surface Mount	-	1	-	8	-	8	ENHANCEMENT MODE	-	-	-	-	8-VDFN Exposed Pad	-	-	-	-	Tape & Reel (TR)	-	-	Active	yes	260	8	-	-	-	635mW	-	-	-	2006	20A	-	No	-	-	-	-	-	55ns	-	-	-	ROHS3 Compliant	-	-	-	-	YES	-	-	Tin (Sn)	-	-	-	40	-	SWITCHING	-	NPN, P-Channel	-	-	-	-	0.3 V	-	-	35V PNP 20V P-Channel	-	3.3mm	-
NUS5531MTR2G ON Semiconductor	2088	-	-		-	-	General Purpose	-	-	-	DRAIN	-	-	2A	-	-	-	-	-	5.47A	5.47A	2A PNP 5.47A P-Channel	150	4.4A	-	12V	32mOhm	-	-	-	EAR99	Single	-	-	17.5 ns	-	-	-	METAL-OXIDE SEMICONDUCTOR	8V	-	-	-	-	-	-	-	-	-	e3	Lead Free	-	-	OBSOLETE (Last Updated: 1 week ago)	-	-	-	-	-	-	150u00b0C	-	-	-	-	-	-	-	-55u00b0C	1 (Unlimited)	Surface Mount	Surface Mount	-	1	-	8	-	8	ENHANCEMENT MODE	-	-	-	-	8-WDFN Exposed Pad	-	-	-	-	Tape & Reel (TR)	-	-	Obsolete	yes	-	8	-	-	-	1.46W	-	-	-	2008	-	-	No	-	-	-	-	17.5ns	-	-	-	-	RoHS Compliant	-	-	-	-	-	-	-	Tin (Sn)	-	DUAL	-	-	-	SWITCHING	-	PNP, P-Channel	-	-	80 ns	8 ns	-	-	-	20V PNP 12V P-Channel	-	-	-
PBSM5240PF,115 Nexperia USA Inc.	7	-	-		-	-	Load Switch	-	PBSM5240PF	-	COLLECTOR	-	-	-	-	-	40V	-	SINGLE WITH BUILT-IN FET AND DIODE	660mA	1.8A	1.8A PNP 660mA N-Channel	140	-	-	30V	370mOhm	-	-	-	EAR99	-	-	8 Weeks	-	-	-	-	-	8V	-	-	-	-	-	8541.29.00.75	-	-	-	e3	Lead Free	-	-	-	-	-	-	-	-	-	150u00b0C	-	-	-	-	-	-	-	-55u00b0C	1 (Unlimited)	Surface Mount	Surface Mount	-	1	-	6	-	6	-	-	-	-	-	6-UDFN Exposed Pad	-	-	-	-	Tape & Reel (TR)	-	-	Active	-	-	6	-	PNP	-	1.1W	-	-	-	2010	-	-	No	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	-	-	-	-	-	Tin (Sn)	-	DUAL	-	-	-	SWITCHING	-	PNP, N-Channel	150MHz	-	-	-	-	-	-	40V PNP 30V N-Channel	-	-	-
PBSM5240PF115 NXP	-	-	-	-	-	-	-	-	-	HV73V1J	-	-	-	-	-	-	-	Thick Film	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Automotive AEC-Q200, High Voltage, Moisture Resistant	-	-	-	-	-	0.022 (0.55mm)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	KOA Speer Electronics, Inc.	-	-	-	-	-	-	-	-	-	2	-	-55u00b0C ~ 155u00b0C	-	-	Tape & Reel (TR)	0603 (1608 Metric)	-	-	-	-	-	-	-	-	-	-	-	-	-	0.1W, 1/10W	-	-	-	Active	-	-	-	-	AEC-Q200	-	-	300 kOhms	-	-	-	-	-	-	HV73V	0.063 L x 0.031 W (1.60mm x 0.80mm)	-	0603	-	-	u00b1100ppm/u00b0C	-	-	-	-	-	u00b12%	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PBSM5240PFH,115 Nexperia USA Inc.	51000	-	-		-	-	General Purpose	-	PBSM5240PF	-	-	-	-	-	-	-	-	-	-	1.8A	1.8A	1.8A PNP 660mA N-Channel	-	-	-	-	580mOhm	40V	-	-	-	-	-	8 Weeks	4.5 ns	-	-	-	-	700mV	-	-	-	-	-	-	-	-	-	e3	-	-	-	-	-	-	-	-	-	-	150u00b0C	1.1W	-	-	-	-	-	-	-55u00b0C	1 (Unlimited)	Surface Mount	Surface Mount	-	-	2	6	-	-	-	-	-	-	-	6-UDFN Exposed Pad	-	-	-	-	Tape & Reel (TR)	-	-	Active	-	-	6	-	-	-	-	-	-	-	2010	-	-	-	-	-	-	-	7.5ns	-	-	-	-	ROHS3 Compliant	-	-	-	-	-	-	-	Tin (Sn)	-	-	-	-	-	-	-	PNP, N-Channel	-	-	18 ns	4 ns	-	-	-	40V PNP 30V N-Channel	-	-	-
PMC85XP,115 Nexperia USA Inc.	16	-	-		-	-	General Purpose	-	PMC85	-	-	-	-	-	-	-	-	-	-	-	2.6A	-	-	-	-	-	-	-30V	-	-	-	-	-	8 Weeks	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	e3	-	-	-	-	-	-	-	-	-30V	-	150u00b0C	-	-	-	-	-	-	-	-65u00b0C	1 (Unlimited)	-	Surface Mount	-	-	-	6	-	-	-	-	-	-	-	6-UDFN Exposed Pad	-	-	-	-	Tape & Reel (TR)	-	-	Active	-	NOT SPECIFIED	6	-	-	-	-	-	-	-	2013	-	-	-	-	-	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	-	-	-	-	-	Tin (Sn)	-	-	-	NOT SPECIFIED	-	-	-	NPN Pre-Biased, P-Channel	-	-	-	-	-	-	-	30V	-	-	-

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