JFETs Transistors – Cybertant Technology

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Microchip Technology (31)

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Additional Feature
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Base Part Number
2N5638 (1)

2SK3666 (1)
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2N4859 (1)
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Microchip Technology (13)
Breakdown Voltage / V
30V (1)
Configuration
Single (2)
Continuous Drain Current (ID)
50mA (3)

10mA (2)
Current - Drain (Idss) @ Vds (Vgs=0)
30 mA @ 20 V (1)

15 mA @ 20 V (1)

8 mA @ 20 V (1)

175 mA @ 15 V (2)

100 mA @ 15 V (1)

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90 mA @ 18 V (1)

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25 mA @ 15 V (1)

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10mA @ 5V (1)

16mA @ 5V (1)

1.2mA @ 10V (1)
Current Drain (Id) - Max
10mA (1)
Current Rating
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Drain Current-Max (Abs) (ID)
0.05A (2)

0.01A (1)
Drain to Source Breakdown Voltage
30V (2)
Drain to Source Resistance
30Ohm (1)

200Ohm (2)
Drain to Source Voltage (Vdss)
40 V (7)

30 V (6)

30V (2)

15V (2)
Drain-Source Current at Vgs=0
- 10 mA (1)

- 15 mA to - 60 mA (1)
Drain-source On Resistance-Max
100 u03a9 (1)
DS Breakdown Voltage-Min
30 V (1)
ECCN Code
EAR99 (5)
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Single (5)
Factory Lead Time
6 Weeks (2)

2 Weeks (1)

4 Weeks (1)
Factory Pack QuantityFactory Pack Quantity
1 (14)
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7 pF (1)
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JUNCTION (4)
FET Type
N-Channel (12)

P-Channel (5)
Gate to Source Voltage (Vgs)
-30V (3)

-10V (1)
Gate-Source Cutoff Voltage
6 V (1)

3 V to 6 V (1)
Height
1.1mm (3)
HTS Code
8541.21.00.95 (3)
Ihs Manufacturer
MICROSEMI CORP (1)
Input Capacitance
4pF (1)
Input Capacitance (Ciss) (Max) @ Vds
16pF @ 20V (3)

18pF @ 10V (4)

18pF @ 10V (VGS) (1)

25pF @ 15V (3)

27pF @ 15V (2)

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JEDEC-95 Code
TO-206AA (1)
JESD-30 Code
O-MBCY-W3 (1)
JESD-609 Code
e6 (4)
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Lead Free (5)
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2.9mm (3)
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ACTIVE (Last Updated: 1 day ago) (2)

ACTIVE (Last Updated: 6 days ago) (1)

ACTIVE (Last Updated: 3 days ago) (1)
Manufacturer
Microchip (13)
Manufacturer Part Number
2N5115E3 (1)
Max Operating Temperature
150u00b0C (1)
Max Power Dissipation
350mW (1)

200mW (4)
Maximum Drain Gate Voltage
30 V (1)
Maximum Operating Temperature
+ 200 C (2)
Mfr
Microchip Technology (14)
Min Operating Temperature
-55u00b0C (1)
Minimum Operating Temperature
- 65 C (2)
Moisture Sensitivity Level (MSL)
1 (Unlimited) (5)
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Through Hole (1)

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1 (4)
Number of Pins
3 (5)
Number of Terminals
3 (1)
Number of Terminations
3 (3)
Operating Mode
DEPLETION MODE (4)
Operating Temperature
-65u00b0C ~ 175u00b0C (TJ) (3)

-65u00b0C ~ 200u00b0C (TJ) (10)

-55u00b0C~150u00b0C TJ (1)

150u00b0C TJ (3)
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Tape & Reel (TR) (10)

Bulk (4)
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TO-18-3 (2)

3-SMD, No Lead (11)

TO-206AA, TO-18-3 Metal Can (1)

4-SMD, No Lead (1)

TO-226-3, TO-92-3 (TO-226AA) (1)

TO-236-3, SC-59, SOT-23-3 (3)

TO-236-3 (1)
Package Body Material
METAL (1)
Package Description
CYLINDRICAL, O-MBCY-W3 (1)
Package Shape
ROUND (1)
Package Style
CYLINDRICAL (1)
Packaging
Bulk (12)

Tape & Reel (TR) (4)
Part Life Cycle Code
Active (1)
Part Package Code
BCY (1)
Part Status
Obsolete (1)

Active (4)
Pbfree Code
yes (5)
Pd - Power Dissipation
300 mW (1)

500 mW (1)
Pin Count
3 (5)
Polarity/Channel Type
P-CHANNEL (1)

N-CHANNEL (1)
Power - Max
360 mW (8)

500 mW (5)
Power Dissipation
350mW (1)

200mW (2)
Product Category
JFET (13)
Product Status
Active (14)
Product Type
JFETs (13)
Published
2002 (1)

2012 (1)

1999 (1)

2005 (1)

2011 (1)
Radiation Hardening
No (1)
Rds On - Drain-Source Resistance
100 Ohms (1)
Reach Compliance Code
compliant (1)

unknown (1)
Resistance - RDS(On)
30 Ohms (1)

50 Ohms (1)

80 Ohms (1)

25 Ohms (2)

40 Ohms (1)

60 Ohms (2)

75 Ohms (1)

100 Ohms (2)

175 Ohms (2)

30Ohm (1)

200Ohm (1)
Risk Rank
5.07 (1)
RoHS
N (2)

Details (10)
Rohs Code
Yes (1)
RoHS Status
RoHS Compliant (1)

ROHS3 Compliant (4)
Series
Military, MIL-PRF-19500 (3)
Subcategory
Transistors (13)
Supplier Device Package
3-UB (3.09x2.45) (4)

UB (4)

TO-18 (TO-206AA) (1)

UA (1)
Surface Mount
NO (1)

YES (2)
Technology
Si (2)
Terminal Finish
Tin/Bismuth (Sn/Bi) (4)
Terminal Form
WIRE (1)

GULL WING (3)
Terminal Position
BOTTOM (1)

DUAL (3)
Termination
SMD/SMT (1)
Transistor Application
AMPLIFIER (3)
Transistor Element Material
SILICON (3)
Transistor Polarity
P-Channel (2)
Type
JFET (1)
Vds - Drain-Source Breakdown Voltage
30 V (1)
Vgs - Gate-Source Breakdown Voltage
30 V (2)
Voltage - Breakdown (V(BR)GSS)
40 V (7)

30 V (6)
Voltage - Cutoff (VGS off) @ Id
10 V @ 500 pA (2)

6 V @ 500 pA (1)

800 mV @ 500 pA (1)

4 V @ 500 pA (1)

10 V @ 1 nA (1)

3 V @ 1 nA (1)

6 V @ 1 nA (1)

1 V @ 1 nA (1)

4 V @ 1 nA (1)

300mV @ 100u03bcA (2)

180mV @ 1u03bcA (1)
Voltage - Rated DC
30V (1)
Weight
201mg (1)

7.994566mg (1)
Width
1.5mm (3)

Categories

JFETs Transistors

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100 Results

Product	Inventory	Pricing(USD)	Datasheet	RoHS	Additional Feature	Base Part Number	Base Product Number	Brand	Breakdown Voltage / V	Configuration	Continuous Drain Current (ID)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Current Rating	Drain Current-Max (Abs) (ID)	Drain to Source Breakdown Voltage	Drain to Source Resistance	Drain to Source Voltage (Vdss)	Drain-Source Current at Vgs=0	Drain-source On Resistance-Max	DS Breakdown Voltage-Min	ECCN Code	Element Configuration	Factory Lead Time	Factory Pack QuantityFactory Pack Quantity	Feedback Cap-Max (Crss)	FET Technology	FET Type	Gate to Source Voltage (Vgs)	Gate-Source Cutoff Voltage	Height	HTS Code	Ihs Manufacturer	Input Capacitance	Input Capacitance (Ciss) (Max) @ Vds	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Lead Free	Length	Lifecycle Status	Manufacturer	Manufacturer Part Number	Max Operating Temperature	Max Power Dissipation	Maximum Drain Gate Voltage	Maximum Operating Temperature	Mfr	Min Operating Temperature	Minimum Operating Temperature	Moisture Sensitivity Level (MSL)	Mount	Mounting Styles	Mounting Type	Number of Elements	Number of Pins	Number of Terminals	Number of Terminations	Operating Mode	Operating Temperature	Package	Package / Case	Package Body Material	Package Description	Package Shape	Package Style	Packaging	Part Life Cycle Code	Part Package Code	Part Status	Pbfree Code	Pd - Power Dissipation	Pin Count	Polarity/Channel Type	Power - Max	Power Dissipation	Product Category	Product Status	Product Type	Published	Radiation Hardening	Rds On - Drain-Source Resistance	Reach Compliance Code	Resistance - RDS(On)	Risk Rank	RoHS	Rohs Code	RoHS Status	Series	Subcategory	Supplier Device Package	Surface Mount	Technology	Terminal Finish	Terminal Form	Terminal Position	Termination	Transistor Application	Transistor Element Material	Transistor Polarity	Type	Vds - Drain-Source Breakdown Voltage	Vgs - Gate-Source Breakdown Voltage	Voltage - Breakdown (V(BR)GSS)	Voltage - Cutoff (VGS off) @ Id	Voltage - Rated DC	Weight	Width
2N2609 Atmel (Microchip Technology)	-	-	-		-	-	-	-	-	Single	-	-	-	-	-	-	-	-	- 10 mA	-	-	-	-	-	1	-	-	-	-	6 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	+ 200 C	-	-	- 65 C	-	-	Through Hole	-	-	-	-	-	-	-	-	TO-18-3	-	-	-	-	Bulk	-	-	-	-	300 mW	-	-	-	-	-	-	-	-	-	-	-	-	-	N	-	-	-	-	-	-	-	-	-	-	-	-	-	P-Channel	-	-	30 V	-	-	-	-	-
2N4091UB/TR Microchip Technology	39	-	-		-	-	-	Microchip Technology	-	-	-	30 mA @ 20 V	-	-	-	-	-	40 V	-	-	-	-	-	-	1	-	-	N-Channel	-	-	-	-	-	-	16pF @ 20V	-	-	-	-	-	-	Microchip	-	-	-	-	-	Microchip Technology	-	-	-	-	-	Surface Mount	-	-	-	-	-	-65u00b0C ~ 175u00b0C (TJ)	Tape & Reel (TR)	3-SMD, No Lead	-	-	-	-	Bulk	-	-	-	-	-	-	-	360 mW	-	JFET	Active	JFETs	-	-	-	-	30 Ohms	-	Details	-	-	-	Transistors	3-UB (3.09x2.45)	-	-	-	-	-	-	-	-	-	-	-	-	40 V	-	-	-	-
2N4092UB/TR Microchip Technology	39	-	-		-	-	-	Microchip Technology	-	-	-	15 mA @ 20 V	-	-	-	-	-	40 V	-	-	-	-	-	-	1	-	-	N-Channel	-	-	-	-	-	-	16pF @ 20V	-	-	-	-	-	-	Microchip	-	-	-	-	-	Microchip Technology	-	-	-	-	-	Surface Mount	-	-	-	-	-	-65u00b0C ~ 175u00b0C (TJ)	Tape & Reel (TR)	3-SMD, No Lead	-	-	-	-	Bulk	-	-	-	-	-	-	-	360 mW	-	JFET	Active	JFETs	-	-	-	-	50 Ohms	-	Details	-	-	-	Transistors	3-UB (3.09x2.45)	-	-	-	-	-	-	-	-	-	-	-	-	40 V	-	-	-	-
2N4093UB/TR Microchip Technology	21	-	-		-	-	-	Microchip Technology	-	-	-	8 mA @ 20 V	-	-	-	-	-	40 V	-	-	-	-	-	-	1	-	-	N-Channel	-	-	-	-	-	-	16pF @ 20V	-	-	-	-	-	-	Microchip	-	-	-	-	-	Microchip Technology	-	-	-	-	-	Surface Mount	-	-	-	-	-	-65u00b0C ~ 175u00b0C (TJ)	Tape & Reel (TR)	3-SMD, No Lead	-	-	-	-	Bulk	-	-	-	-	-	-	-	360 mW	-	JFET	Active	JFETs	-	-	-	-	80 Ohms	-	Details	-	-	-	Transistors	3-UB (3.09x2.45)	-	-	-	-	-	-	-	-	-	-	-	-	40 V	-	-	-	-
2N4393UB Microchip Technology	25	-	-		-	-	2N4393	Microchip Technology	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Microchip	-	-	-	-	-	Microchip Technology	-	-	-	-	Through Hole	-	-	-	-	-	-	-	Bulk	TO-18-3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	JFET	Active	JFETs	-	-	-	-	-	-	N	-	-	-	Transistors	-	-	Si	-	-	-	-	-	-	-	JFET	-	-	-	-	-	-	-
2N4856UB/TR Microchip Technology	39	-	-		-	-	2N4856	Microchip Technology	-	-	-	175 mA @ 15 V	-	-	-	-	-	40 V	-	-	-	-	-	-	1	-	-	N-Channel	-	-	-	-	-	-	18pF @ 10V	-	-	-	-	-	-	Microchip	-	-	-	-	-	Microchip Technology	-	-	-	-	-	Surface Mount	-	-	-	-	-	-65u00b0C ~ 200u00b0C (TJ)	Tape & Reel (TR)	3-SMD, No Lead	-	-	-	-	Bulk	-	-	-	-	-	-	-	360 mW	-	JFET	Active	JFETs	-	-	-	-	25 Ohms	-	Details	-	-	-	Transistors	-	-	-	-	-	-	-	-	-	-	-	-	-	40 V	10 V @ 500 pA	-	-	-
2N4857UB/TR Microchip Technology	39	-	-		-	-	2N4857	Microchip Technology	-	-	-	100 mA @ 15 V	-	-	-	-	-	40 V	-	-	-	-	-	-	1	-	-	N-Channel	-	-	-	-	-	-	18pF @ 10V	-	-	-	-	-	-	Microchip	-	-	-	-	-	Microchip Technology	-	-	-	-	-	Surface Mount	-	-	-	-	-	-65u00b0C ~ 200u00b0C (TJ)	Tape & Reel (TR)	3-SMD, No Lead	-	-	-	-	Bulk	-	-	-	-	-	-	-	360 mW	-	JFET	Active	JFETs	-	-	-	-	40 Ohms	-	Details	-	-	-	Transistors	-	-	-	-	-	-	-	-	-	-	-	-	-	40 V	6 V @ 500 pA	-	-	-
2N4858U Microchip Technology	47	-	-	-	-	-	2N4858	Microchip Technology	-	-	-	8 mA @ 15 V	-	-	-	-	-	40 V	-	-	-	-	-	-	1	-	-	N-Channel	-	-	-	-	-	-	18pF @ 10V	-	-	-	-	-	-	Microchip	-	-	-	-	-	Microchip Technology	-	-	-	-	-	Surface Mount	-	-	-	-	-	-65u00b0C ~ 200u00b0C (TJ)	Bulk	3-SMD, No Lead	-	-	-	-	-	-	-	-	-	-	-	-	360 mW	-	JFET	Active	JFETs	-	-	-	-	60 Ohms	-	-	-	-	-	Transistors	UB	-	-	-	-	-	-	-	-	-	-	-	-	40 V	800 mV @ 500 pA	-	-	-
2N4858UB/TR Microchip Technology	21	-	-		-	-	2N4858	Microchip Technology	-	-	-	8 mA @ 15 V	-	-	-	-	-	40 V	-	-	-	-	-	-	1	-	-	N-Channel	-	-	-	-	-	-	18pF @ 10V (VGS)	-	-	-	-	-	-	Microchip	-	-	-	-	-	Microchip Technology	-	-	-	-	-	Surface Mount	-	-	-	-	-	-65u00b0C ~ 200u00b0C (TJ)	Tape & Reel (TR)	3-SMD, No Lead	-	-	-	-	Bulk	-	-	-	-	-	-	-	360 mW	-	JFET	Active	JFETs	-	-	-	-	60 Ohms	-	Details	-	-	-	Transistors	3-UB (3.09x2.45)	-	-	-	-	-	-	-	-	-	-	-	-	40 V	4 V @ 500 pA	-	-	-
2N4859UB/TR Microchip Technology	21	-	-	-	-	-	2N4859	-	-	-	-	175 mA @ 15 V	-	-	-	-	-	30 V	-	-	-	-	-	-	-	-	-	N-Channel	-	-	-	-	-	-	18pF @ 10V	-	-	-	-	-	-	-	-	-	-	-	-	Microchip Technology	-	-	-	-	-	Surface Mount	-	-	-	-	-	-65u00b0C ~ 200u00b0C (TJ)	Tape & Reel (TR)	3-SMD, No Lead	-	-	-	-	-	-	-	-	-	-	-	-	360 mW	-	-	Active	-	-	-	-	-	25 Ohms	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	30 V	10 V @ 500 pA	-	-	-
2N5114UB/TR Microchip Technology	39	-	-		-	-	-	Microchip Technology	-	-	-	90 mA @ 18 V	-	-	-	-	-	30 V	-	-	-	-	-	-	1	-	-	P-Channel	-	-	-	-	-	-	25pF @ 15V	-	-	-	-	-	-	Microchip	-	-	-	-	-	Microchip Technology	-	-	-	-	-	Surface Mount	-	-	-	-	-	-65u00b0C ~ 200u00b0C (TJ)	Tape & Reel (TR)	3-SMD, No Lead	-	-	-	-	Bulk	-	-	-	-	-	-	-	500 mW	-	JFET	Active	JFETs	-	-	-	-	75 Ohms	-	Details	-	-	Military, MIL-PRF-19500	Transistors	UB	-	-	-	-	-	-	-	-	-	-	-	-	30 V	10 V @ 1 nA	-	-	-
2N5115E3 Microchip Technology	82	-	-		HIGH RELIABILITY	-	-	Microchip Technology	-	Single	-	15 mA @ 15 V	-	-	-	-	-	30 V	- 15 mA to - 60 mA	100 u03a9	30 V	EAR99	-	-	1	7 pF	JUNCTION	P-Channel	-	3 V to 6 V	-	8541.21.00.95	MICROSEMI CORP	-	25pF @ 15V	TO-206AA	O-MBCY-W3	-	-	-	-	Microchip	2N5115E3	-	-	30 V	+ 200 C	Microchip Technology	-	- 65 C	-	-	Through Hole	Through Hole	1	-	3	-	DEPLETION MODE	-65u00b0C ~ 200u00b0C (TJ)	Bulk	TO-206AA, TO-18-3 Metal Can	METAL	CYLINDRICAL, O-MBCY-W3	ROUND	CYLINDRICAL	Bulk	Active	BCY	-	-	500 mW	3	P-CHANNEL	500 mW	-	JFET	Active	JFETs	-	-	100 Ohms	compliant	100 Ohms	5.07	Details	Yes	-	-	Transistors	TO-18 (TO-206AA)	NO	Si	-	WIRE	BOTTOM	-	-	SILICON	P-Channel	-	30 V	30 V	30 V	3 V @ 1 nA	-	-	-
2N5115UB/TR Microchip Technology	39	-	-		-	-	-	Microchip Technology	-	-	-	60 mA @ 15 V	-	-	-	-	-	30 V	-	-	-	-	-	-	1	-	-	P-Channel	-	-	-	-	-	-	25pF @ 15V	-	-	-	-	-	-	Microchip	-	-	-	-	-	Microchip Technology	-	-	-	-	-	Surface Mount	-	-	-	-	-	-65u00b0C ~ 200u00b0C (TJ)	Tape & Reel (TR)	3-SMD, No Lead	-	-	-	-	Bulk	-	-	-	-	-	-	-	500 mW	-	JFET	Active	JFETs	-	-	-	-	100 Ohms	-	Details	-	-	Military, MIL-PRF-19500	Transistors	UB	-	-	-	-	-	-	-	-	-	-	-	-	30 V	6 V @ 1 nA	-	-	-
2N5116UA Microchip Technology	41	-	-	-	-	-	-	Microchip Technology	-	-	-	5 mA @ 15 V	-	-	-	-	-	30 V	-	-	-	-	-	-	1	-	-	P-Channel	-	-	-	-	-	-	27pF @ 15V	-	-	-	-	-	-	Microchip	-	-	-	-	-	Microchip Technology	-	-	-	-	-	Surface Mount	-	-	-	-	-	-65u00b0C ~ 200u00b0C (TJ)	Bulk	4-SMD, No Lead	-	-	-	-	-	-	-	-	-	-	-	-	500 mW	-	JFET	Active	JFETs	-	-	-	-	175 Ohms	-	-	-	-	-	Transistors	UA	-	-	-	-	-	-	-	-	-	-	-	-	30 V	1 V @ 1 nA	-	-	-
2N5116UB/TR Microchip Technology	39	-	-		-	-	-	Microchip Technology	-	-	-	25 mA @ 15 V	-	-	-	-	-	30 V	-	-	-	-	-	-	1	-	-	P-Channel	-	-	-	-	-	-	27pF @ 15V	-	-	-	-	-	-	Microchip	-	-	-	-	-	Microchip Technology	-	-	-	-	-	Surface Mount	-	-	-	-	-	-65u00b0C ~ 200u00b0C (TJ)	Tape & Reel (TR)	3-SMD, No Lead	-	-	-	-	Bulk	-	-	-	-	-	-	-	500 mW	-	JFET	Active	JFETs	-	-	-	-	175 Ohms	-	Details	-	-	Military, MIL-PRF-19500	Transistors	UB	-	-	-	-	-	-	-	-	-	-	-	-	30 V	4 V @ 1 nA	-	-	-
2N5638 ON Semiconductor	-	-	-		-	2N5638	-	-	-	-	50mA	50mA @ 20V	-	50mA	-	-	30Ohm	30V	-	-	-	-	Single	-	-	-	-	N-Channel	-30V	-	-	-	-	-	10pF @ 12V VGS	-	-	-	Lead Free	-	-	-	-	-	350mW	-	-	-	-	-	1 (Unlimited)	Through Hole	-	Through Hole	-	3	-	-	-	-55u00b0C~150u00b0C TJ	-	TO-226-3, TO-92-3 (TO-226AA)	-	-	-	-	Bulk	-	-	Obsolete	yes	-	-	-	-	350mW	-	-	-	2002	-	-	unknown	30Ohm	-	-	-	RoHS Compliant	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	30V	201mg	-
2SK2394-6-TB-E ON Semiconductor	-	-	-		LOW NOISE	-	-	-	-	-	50mA	10mA @ 5V	-	-	0.05A	-	-	15V	-	-	-	EAR99	Single	6 Weeks	-	-	JUNCTION	N-Channel	-	-	-	8541.21.00.95	-	-	10pF @ 5V	-	-	e6	Lead Free	-	ACTIVE (Last Updated: 1 day ago)	-	-	-	200mW	-	-	-	-	-	1 (Unlimited)	-	-	Surface Mount	1	3	-	3	DEPLETION MODE	150u00b0C TJ	-	TO-236-3, SC-59, SOT-23-3	-	-	-	-	Tape & Reel (TR)	-	-	Active	yes	-	3	-	-	-	-	-	-	2012	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	-	YES	-	Tin/Bismuth (Sn/Bi)	GULL WING	DUAL	-	AMPLIFIER	SILICON	-	-	-	-	-	300mV @ 100u03bcA	-	-	-
2SK2394-7-TB-E ON Semiconductor	12000	-	-		LOW NOISE	-	-	-	-	-	50mA	16mA @ 5V	-	-	0.05A	-	-	15V	-	-	-	EAR99	Single	2 Weeks	-	-	JUNCTION	N-Channel	-10V	-	1.1mm	8541.21.00.95	-	-	10pF @ 5V	-	-	e6	Lead Free	2.9mm	ACTIVE (Last Updated: 1 day ago)	-	-	-	200mW	-	-	-	-	-	1 (Unlimited)	Surface Mount	-	Surface Mount	1	3	-	3	DEPLETION MODE	150u00b0C TJ	-	TO-236-3, SC-59, SOT-23-3	-	-	-	-	Tape & Reel (TR)	-	-	Active	yes	-	3	-	-	-	-	-	-	1999	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	-	-	-	Tin/Bismuth (Sn/Bi)	GULL WING	DUAL	-	AMPLIFIER	SILICON	-	-	-	-	-	300mV @ 100u03bcA	-	-	1.5mm
2SK3666-2-TB-E ON Semiconductor	2598	-	-		-	-	-	-	-	-	10mA	-	-	-	0.01A	30V	200Ohm	30V	-	-	-	EAR99	Single	6 Weeks	-	-	JUNCTION	-	-30V	-	1.1mm	-	-	4pF	-	-	-	e6	Lead Free	2.9mm	ACTIVE (Last Updated: 6 days ago)	-	-	150u00b0C	200mW	-	-	-	-55u00b0C	-	1 (Unlimited)	-	-	-	1	3	-	3	DEPLETION MODE	-	-	TO-236-3	-	-	-	-	Tape & Reel (TR)	-	-	Active	yes	-	3	N-CHANNEL	-	200mW	-	-	-	2005	-	-	-	-	-	-	-	ROHS3 Compliant	-	-	-	YES	-	Tin/Bismuth (Sn/Bi)	GULL WING	DUAL	-	AMPLIFIER	-	-	-	-	-	-	-	-	-	1.5mm
2SK3666-3-TB-E ON Semiconductor	12000	-	-		-	2SK3666	-	-	30V	-	10mA	1.2mA @ 10V	10mA	-	-	30V	200Ohm	-	-	-	-	EAR99	Single	4 Weeks	-	-	-	N-Channel	-30V	-	1.1mm	-	-	-	4pF @ 10V	-	-	e6	Lead Free	2.9mm	ACTIVE (Last Updated: 3 days ago)	-	-	-	200mW	-	-	-	-	-	1 (Unlimited)	-	-	Surface Mount	-	3	-	-	-	150u00b0C TJ	-	TO-236-3, SC-59, SOT-23-3	-	-	-	-	Tape & Reel (TR)	-	-	Active	yes	-	3	-	-	200mW	-	-	-	2011	No	-	-	200Ohm	-	-	-	ROHS3 Compliant	-	-	-	-	-	Tin/Bismuth (Sn/Bi)	-	-	SMD/SMT	-	-	-	-	-	-	-	180mV @ 1u03bcA	-	7.994566mg	1.5mm

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