Single MOSFETs Transistors – Cybertant Technology

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Manufacturer
Alpha & Omega Semiconductor Inc. (5)

Diodes Incorporated (3)

Infineon Technologies (47)

Microchip Technology (1)

Nexperia USA Inc. (3)

ON Semiconductor (35)

Renesas Electronics America (1)

Rohm Semiconductor (1)

STMicroelectronics (1)

Taiwan Semiconductor Corporation (1)

Texas Instruments (1)
Additional Feature
LOGIC LEVEL COMPATIBLE (2)

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE (3)

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE (1)

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY (1)

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE (2)

ULTRA LOW RESISTANCE (1)

AVALANCHE RATED, HIGH RELIABILITY (4)
Avalanche Energy Rating (Eas)
560 mJ (1)

264 mJ (1)

280 mJ (2)

247 mJ (1)

70 mJ (1)

250 mJ (2)

84 mJ (1)
Case Connection
DRAIN (13)
Contact Plating
Tin (13)
Continuous Drain Current (ID)
220mA (1)

900mA (1)

169A (1)

110A (1)

57A (1)

-40A (1)

-31A (1)

33A (1)

18A (2)

7A (1)

-6.7A (1)

-11A (1)

-15A (1)

-14A (2)

-23A (1)

-19A (1)

180A (1)

65A (1)
Current
2A (1)

23A (1)
Current - Continuous Drain (Id) @ 25u2103
220mA Ta (1)

900mA Ta (1)

169A Tc (1)

110A Tc (1)

57A Tc (1)

38A Tc (1)

31A Tc (1)

33A Tc (1)

18A Tc (1)

7.3A Tc (1)

6.7A Ta (1)

11A Ta (1)

15A Ta (1)

18A Ta (1)

14A Tc (2)

23A Tc (1)

19A Tc (1)

120A Tc (1)

65A Tc (1)
Current Rating
220mA (1)

900mA (1)

169A (1)

110A (1)

57A (1)

-40A (1)

-31A (1)

33A (1)

18A (2)

7.3A (1)

-6.7A (1)

-11A (1)

-15A (1)

-14A (2)

-23A (1)

-19A (1)

180A (1)
Drain Current-Max (Abs) (ID)
0.9A (1)

75A (2)

5.3A (1)
Drain to Source Breakdown Voltage
25V (1)

20V (1)

55V (2)

100V (3)

-100V (4)

-55V (2)

200V (2)

30V (1)

-20V (2)

-30V (1)

40V (1)
Drain to Source Voltage (Vdss)
55V (1)

20V (1)

30V (1)

100V (1)
Drain-source On Resistance-Max
0.0045Ohm (1)
Drive Voltage (Max Rds On, Min Rds On)
2.7V 4.5V (2)

2.5V 4.5V (2)

10V (13)

4.5V 10V (3)
Dual Supply Voltage
25V (1)

20V (2)

55V (3)

100V (6)

-55V (1)

200V (2)

30V (1)

-20V (1)

-30V (1)

40V (1)

-100V (1)
ECCN Code
EAR99 (20)
Element Configuration
Single (20)
Factory Lead Time
10 Weeks (2)

12 Weeks (18)
Fall Time (Typ)
6 ns (1)

7 ns (1)

110 ns (1)

65 ns (2)

47 ns (1)

55 ns (1)

63 ns (1)

35 ns (1)

5.5 ns (1)

19 ns (1)

76 ns (1)

160 ns (1)

5 ns (1)

46 ns (2)

51 ns (1)

41 ns (1)

88 ns (1)

31 ns (1)
FET Type
N-Channel (11)

P-Channel (9)
Forward Voltage
-1.2V (1)
Gate Charge (Qg) (Max) @ Vgs
0.7nC @ 4.5V (1)

1.5nC @ 4.5V (1)

260nC @ 10V (1)

146nC @ 10V (1)

130nC @ 10V (1)

230nC @ 10V (1)

63nC @ 10V (1)

71nC @ 10V (1)

67nC @ 10V (1)

28nC @ 10V (1)

50nC @ 4.5V (2)

110nC @ 10V (2)

130nC @ 4.5V (1)

58nC @ 10V (2)

35nC @ 10V (1)

210nC @ 10V (1)

98nC @ 10V (1)
Gate to Source Voltage (Vgs)
8V (1)

12V (3)

20V (15)

30V (1)
Height
1.11mm (1)

930u03bcm (1)

19.8mm (2)

5.084mm (5)

4.826mm (2)

4.83mm (2)

1.4986mm (2)

1.75mm (3)

15.24mm (1)

16.51mm (1)
Input Capacitance (Ciss) (Max) @ Vds
9.5pF @ 10V (1)

109pF @ 10V (1)

5480pF @ 25V (1)

3247pF @ 25V (1)

3130pF @ 25V (1)

2780pF @ 25V (1)

1200pF @ 25V (1)

1960pF @ 25V (1)

1160pF @ 25V (1)

550pF @ 25V (1)

1500pF @ 15V (1)

4030pF @ 25V (1)

7980pF @ 15V (1)

4500pF @ 20V (1)

760pF @ 25V (2)

1450pF @ 25V (1)

620pF @ 25V (1)

9620pF @ 50V (1)

4600pF @ 25V (1)
JEDEC-95 Code
TO-220AB (4)

TO-252 (2)
JESD-30 Code
R-PSSO-G2 (9)
JESD-609 Code
e3 (15)
Lead Free
Lead Free (9)

Contains Lead, Lead Free (8)

Contains Lead (3)
Lead Pitch
2.54mm (2)
Length
2.92mm (2)

10.668mm (10)

4.9784mm (5)

10.5156mm (1)

10.66mm (1)

10.6426mm (1)
Lifecycle Status
ACTIVE (Last Updated: 15 hours ago) (1)

ACTIVE (Last Updated: 17 hours ago) (1)
Manufacturer Package Identifier
SOTu221223 (TOu2212236) CASE 318u221208 ISSUE AR (1)
Max Junction Temperature (Tj)
150u00b0C (6)

175u00b0C (7)
Moisture Sensitivity Level (MSL)
1 (Unlimited) (20)
Mount
Surface Mount (16)

Through Hole (4)
Mounting Type
Surface Mount (16)

Through Hole (4)
Nominal Vgs
850 mV (1)

4 V (6)

-4 V (6)

1 V (1)

-700 mV (1)

-2.5 V (1)

1.2 V (1)

2.25 V (1)

5 V (1)
Number of Elements
1 (20)
Number of Channels
1 (13)
Number of Pins
3 (15)

8 (5)
Number of Terminations
3 (6)

2 (9)

8 (4)
Operating Mode
ENHANCEMENT MODE (19)
Operating Temperature
-55u00b0C~150u00b0C TJ (9)

-55u00b0C~175u00b0C TJ (10)

-40u00b0C~175u00b0C TJ (1)
Output Current
2.5A (1)
Package / Case
TO-236-3, SC-59, SOT-23-3 (2)

TO-220-3 (4)

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB (9)

8-SOIC (0.154, 3.90mm Width) (5)
Packaging
Tape & Reel (TR) (16)

Tube (4)
Part Status
Active (20)
Pbfree Code
yes (2)
Peak Reflow Temperature (Cel)
260 (12)

250 (1)
Power Dissipation
350mW (2)

330W (2)

200W (2)

3.8W (3)

110W (1)

130W (1)

150W (1)

2.5W (5)

79W (1)

68W (1)

370W (1)
Power Dissipation (Max)
350mW Ta (2)

330W Tc (2)

200W Tc (2)

3.1W Ta 170W Tc (1)

3.8W Ta 110W Tc (1)

130W Tc (1)

150W Tc (1)

2.5W Tc (1)

2.5W Ta (4)

79W Tc (1)

3.8W Ta 79W Tc (1)

3.1W Ta 110W Tc (1)

3.8W Ta 68W Tc (1)

370W Tc (1)
Published
1999 (1)

2003 (3)

2004 (6)

2001 (1)

2009 (1)

1998 (3)

2005 (1)

1997 (2)

2006 (1)

2008 (1)
Pulsed Drain Current-Max (IDM)
680A (1)

72A (1)

60A (1)

56A (2)

68A (1)

670A (1)

260A (1)
Radiation Hardening
No (20)
Rds On (Max) @ Id, Vgs
4 u03a9 @ 400mA, 4.5V (1)

220m u03a9 @ 900mA, 4.5V (1)

5.3m u03a9 @ 101A, 10V (1)

8m u03a9 @ 62A, 10V (1)

23m u03a9 @ 28A, 10V (1)

60m u03a9 @ 38A, 10V (1)

60m u03a9 @ 16A, 10V (1)

44m u03a9 @ 16A, 10V (1)

150m u03a9 @ 11A, 10V (1)

30m u03a9 @ 7.3A, 10V (1)

40m u03a9 @ 3.2A, 4.5V (1)

13.5m u03a9 @ 11A, 10V (1)

8.2m u03a9 @ 15A, 4.5V (1)

5m u03a9 @ 17A, 10V (1)

200m u03a9 @ 8.4A, 10V (2)

117m u03a9 @ 14A, 10V (1)

100m u03a9 @ 10A, 10V (1)

4.5m u03a9 @ 75A, 10V (1)

24m u03a9 @ 46A, 10V (1)
REACH SVHC
No SVHC (20)
Recovery Time
130 ns (1)

104 ns (1)

220 ns (1)

260 ns (1)

110 ns (1)

170 ns (1)

251 ns (1)

73 ns (1)

100 ns (1)

60 ns (1)

180 ns (1)

150 ns (2)

190 ns (2)

210 ns (1)

82 ns (1)

75 ns (1)
Resistance
4Ohm (1)

220MOhm (1)

5.3mOhm (1)

8MOhm (1)

23MOhm (1)

60mOhm (2)

44MOhm (1)

150mOhm (1)

30mOhm (1)

40mOhm (1)

13.5MOhm (1)

8.2MOhm (1)

5MOhm (1)

200mOhm (2)

117mOhm (1)

100mOhm (1)

24MOhm (1)
Rise Time
6ns (1)

7ns (1)

190ns (1)

101ns (1)

58ns (3)

63ns (1)

66ns (1)

35ns (2)

19ns (1)

32ns (1)

23ns (1)

20ns (2)

12ns (1)

67ns (2)

55ns (1)
RoHS Status
ROHS3 Compliant (20)
Row Spacing
6.3 mm (2)
Series
PowerTrenchu00ae (1)

HEXFETu00ae (18)
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier (4)

Matte Tin (Sn) (1)
Terminal Form
GULL WING (15)
Terminal Position
DUAL (6)
Termination
SMD/SMT (11)

Through Hole (4)
Threshold Voltage
1V (2)

4V (6)

-4V (5)

-700mV (1)

-2.5V (1)

-1.2V (1)

2.25V (1)

-2V (1)

5V (1)
Time@Peak Reflow Temperature-Max (s)
30 (13)
Transistor Application
SWITCHING (18)
Transistor Element Material
SILICON (20)
Turn Off Delay Time
3.5 ns (1)

8 ns (1)

130 ns (1)

50 ns (1)

45 ns (3)

72 ns (1)

39 ns (2)

23 ns (1)

21 ns (3)

100 ns (1)

150 ns (1)

230 ns (1)

40 ns (1)

30 ns (1)

78 ns (1)
Turn On Delay Time
3.2 ns (1)

4.5 ns (1)

13 ns (4)

14 ns (5)

12 ns (1)

11 ns (1)

10 ns (1)

7 ns (1)

15 ns (3)

25 ns (1)

33 ns (1)
Vgs (Max)
u00b18V (1)

u00b112V (3)

u00b120V (15)

u00b130V (1)
Vgs(th) (Max) @ Id
1.06V @ 250u03bcA (1)

1.5V @ 250u03bcA (1)

4V @ 250u03bcA (12)

1V @ 250u03bcA (1)

700mV @ 250u03bcA (1)

2.5V @ 250u03bcA (1)

1.2V @ 250u03bcA (1)

2.25V @ 250u03bcA (1)

5V @ 250u03bcA (1)
Voltage
50V (1)

100V (1)
Voltage - Rated DC
25V (1)

20V (1)

55V (2)

100V (3)

-100V (4)

-55V (2)

200V (1)

30V (1)

-20V (2)

-30V (1)

40V (1)
Weight
30mg (1)
Width
3.05mm (1)

1.3mm (1)

4.826mm (2)

10.54mm (1)

9.65mm (8)

3.9878mm (4)

4.05mm (1)

4.69mm (1)

4.82mm (1)

Categories

Single MOSFETs Transistors

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99 Results

Product	Inventory	Pricing(USD)	Datasheet	Additional Feature	Avalanche Energy Rating (Eas)	Case Connection	Contact Plating	Continuous Drain Current (ID)	Current	Current - Continuous Drain (Id) @ 25u2103	Current Rating	Drain Current-Max (Abs) (ID)	Drain to Source Breakdown Voltage	Drain to Source Voltage (Vdss)	Drain-source On Resistance-Max	Drive Voltage (Max Rds On, Min Rds On)	Dual Supply Voltage	ECCN Code	Element Configuration	Factory Lead Time	Fall Time (Typ)	FET Type	Forward Voltage	Gate Charge (Qg) (Max) @ Vgs	Gate to Source Voltage (Vgs)	Height	Input Capacitance (Ciss) (Max) @ Vds	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Lead Free	Lead Pitch	Length	Lifecycle Status	Manufacturer Package Identifier	Max Junction Temperature (Tj)	Moisture Sensitivity Level (MSL)	Mount	Mounting Type	Nominal Vgs	Number of Elements	Number of Channels	Number of Pins	Number of Terminations	Operating Mode	Operating Temperature	Output Current	Package / Case	Packaging	Part Status	Pbfree Code	Peak Reflow Temperature (Cel)	Power Dissipation	Power Dissipation (Max)	Published	Pulsed Drain Current-Max (IDM)	Radiation Hardening	Rds On (Max) @ Id, Vgs	REACH SVHC	Recovery Time	Resistance	Rise Time	RoHS Status	Row Spacing	Series	Terminal Finish	Terminal Form	Terminal Position	Termination	Threshold Voltage	Time@Peak Reflow Temperature-Max (s)	Transistor Application	Transistor Element Material	Turn Off Delay Time	Turn On Delay Time	Vgs (Max)	Vgs(th) (Max) @ Id	Voltage	Voltage - Rated DC	Weight	Width
FDV301N ON Semiconductor	29952	-	-	LOGIC LEVEL COMPATIBLE	-	-	Tin	220mA	2A	220mA Ta	220mA	-	25V	-	-	2.7V 4.5V	25V	EAR99	Single	10 Weeks	6 ns	N-Channel	-	0.7nC @ 4.5V	8V	1.11mm	9.5pF @ 10V	-	-	e3	Lead Free	-	2.92mm	ACTIVE (Last Updated: 15 hours ago)	SOTu221223 (TOu2212236) CASE 318u221208 ISSUE AR	150u00b0C	1 (Unlimited)	Surface Mount	Surface Mount	850 mV	1	1	3	3	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	yes	260	350mW	350mW Ta	1999	-	No	4 u03a9 @ 400mA, 4.5V	No SVHC	-	4Ohm	6ns	ROHS3 Compliant	-	-	-	GULL WING	DUAL	SMD/SMT	-	30	SWITCHING	SILICON	3.5 ns	3.2 ns	u00b18V	1.06V @ 250u03bcA	50V	25V	-	3.05mm
FDV305N ON Semiconductor	13	-	-	-	-	-	Tin	900mA	-	900mA Ta	900mA	0.9A	20V	-	-	2.5V 4.5V	20V	EAR99	Single	10 Weeks	7 ns	N-Channel	-	1.5nC @ 4.5V	12V	930u03bcm	109pF @ 10V	-	-	e3	Lead Free	-	2.92mm	ACTIVE (Last Updated: 17 hours ago)	-	-	1 (Unlimited)	Surface Mount	Surface Mount	-	1	-	3	3	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	yes	-	350mW	350mW Ta	2003	-	No	220m u03a9 @ 900mA, 4.5V	No SVHC	-	220MOhm	7ns	ROHS3 Compliant	-	PowerTrenchu00ae	-	GULL WING	DUAL	SMD/SMT	1V	-	SWITCHING	SILICON	8 ns	4.5 ns	u00b112V	1.5V @ 250u03bcA	-	20V	30mg	1.3mm
IRF1405PBF Infineon Technologies	1000	-	-	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	560 mJ	DRAIN	-	169A	-	169A Tc	169A	75A	55V	-	-	10V	55V	EAR99	Single	12 Weeks	110 ns	N-Channel	-	260nC @ 10V	20V	19.8mm	5480pF @ 25V	TO-220AB	-	-	Lead Free	2.54mm	10.668mm	-	-	175u00b0C	1 (Unlimited)	Through Hole	Through Hole	4 V	1	1	3	3	ENHANCEMENT MODE	-55u00b0C~175u00b0C TJ	-	TO-220-3	Tube	Active	-	-	330W	330W Tc	2004	680A	No	5.3m u03a9 @ 101A, 10V	No SVHC	130 ns	5.3mOhm	190ns	ROHS3 Compliant	-	HEXFETu00ae	-	-	-	Through Hole	4V	-	SWITCHING	SILICON	130 ns	13 ns	u00b120V	4V @ 250u03bcA	-	55V	-	4.826mm
IRF3205STRLPBF Infineon Technologies	757	-	-	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	264 mJ	DRAIN	-	110A	-	110A Tc	110A	75A	55V	-	-	10V	55V	EAR99	Single	12 Weeks	65 ns	N-Channel	-	146nC @ 10V	20V	5.084mm	3247pF @ 25V	TO-252	R-PSSO-G2	e3	Contains Lead, Lead Free	-	10.668mm	-	-	175u00b0C	1 (Unlimited)	Surface Mount	Surface Mount	4 V	1	1	3	2	ENHANCEMENT MODE	-55u00b0C~175u00b0C TJ	-	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	-	260	200W	200W Tc	2001	-	No	8m u03a9 @ 62A, 10V	No SVHC	104 ns	8MOhm	101ns	ROHS3 Compliant	-	HEXFETu00ae	Matte Tin (Sn) - with Nickel (Ni) barrier	GULL WING	-	SMD/SMT	4V	30	SWITCHING	SILICON	50 ns	14 ns	u00b120V	4V @ 250u03bcA	-	55V	-	10.54mm
IRF3710STRLPBF Infineon Technologies	100000	-	-	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	280 mJ	DRAIN	-	57A	-	57A Tc	57A	-	100V	-	-	10V	100V	EAR99	Single	12 Weeks	47 ns	N-Channel	-	130nC @ 10V	20V	4.826mm	3130pF @ 25V	-	R-PSSO-G2	e3	Contains Lead, Lead Free	-	10.668mm	-	-	-	1 (Unlimited)	Surface Mount	Surface Mount	4 V	1	-	3	2	ENHANCEMENT MODE	-55u00b0C~175u00b0C TJ	-	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	-	260	200W	200W Tc	2009	-	No	23m u03a9 @ 28A, 10V	No SVHC	220 ns	23MOhm	58ns	ROHS3 Compliant	-	HEXFETu00ae	Matte Tin (Sn) - with Nickel (Ni) barrier	GULL WING	-	SMD/SMT	4V	30	SWITCHING	SILICON	45 ns	12 ns	u00b120V	4V @ 250u03bcA	-	100V	-	9.65mm
IRF5210STRLPBF Infineon Technologies	669	-	-	HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE	-	DRAIN	Tin	-40A	-	38A Tc	-40A	-	-100V	-	-	10V	100V	EAR99	Single	12 Weeks	55 ns	P-Channel	-	230nC @ 10V	20V	4.83mm	2780pF @ 25V	-	R-PSSO-G2	e3	Contains Lead	-	10.668mm	-	-	150u00b0C	1 (Unlimited)	Surface Mount	Surface Mount	-4 V	1	1	3	2	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	-	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	-	260	3.8W	3.1W Ta 170W Tc	1998	-	No	60m u03a9 @ 38A, 10V	No SVHC	260 ns	60mOhm	63ns	ROHS3 Compliant	-	HEXFETu00ae	-	GULL WING	-	SMD/SMT	-4V	30	SWITCHING	SILICON	72 ns	14 ns	u00b120V	4V @ 250u03bcA	-	-100V	-	9.65mm
IRF5305STRLPBF Infineon Technologies	-	-	-	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY	280 mJ	DRAIN	Tin	-31A	-	31A Tc	-31A	-	-55V	55V	-	10V	-55V	EAR99	Single	12 Weeks	63 ns	P-Channel	-	63nC @ 10V	20V	5.084mm	1200pF @ 25V	TO-252	R-PSSO-G2	e3	Contains Lead, Lead Free	-	10.668mm	-	-	175u00b0C	1 (Unlimited)	Surface Mount	Surface Mount	-4 V	1	1	3	2	ENHANCEMENT MODE	-55u00b0C~175u00b0C TJ	-	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	-	260	110W	3.8W Ta 110W Tc	2005	-	No	60m u03a9 @ 16A, 10V	No SVHC	110 ns	60mOhm	66ns	ROHS3 Compliant	-	HEXFETu00ae	-	GULL WING	-	-	-4V	30	SWITCHING	SILICON	39 ns	14 ns	u00b120V	4V @ 250u03bcA	-	-55V	-	9.65mm
IRF540NSTRLPBF Infineon Technologies	800	-	-	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	-	DRAIN	Tin	33A	-	33A Tc	33A	-	100V	-	-	10V	100V	EAR99	Single	12 Weeks	35 ns	N-Channel	-	71nC @ 10V	20V	4.826mm	1960pF @ 25V	-	R-PSSO-G2	e3	Lead Free	-	10.668mm	-	-	-	1 (Unlimited)	Surface Mount	Surface Mount	4 V	1	-	3	2	ENHANCEMENT MODE	-55u00b0C~175u00b0C TJ	-	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	-	260	130W	130W Tc	1997	-	No	44m u03a9 @ 16A, 10V	No SVHC	170 ns	44MOhm	35ns	ROHS3 Compliant	-	HEXFETu00ae	-	GULL WING	-	SMD/SMT	4V	30	SWITCHING	SILICON	39 ns	11 ns	u00b120V	4V @ 250u03bcA	-	100V	-	9.65mm
IRF640NSTRLPBF Infineon Technologies	800	-	-	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	247 mJ	DRAIN	-	18A	-	18A Tc	18A	-	200V	-	-	10V	200V	EAR99	Single	12 Weeks	5.5 ns	N-Channel	-	67nC @ 10V	20V	5.084mm	1160pF @ 25V	-	R-PSSO-G2	e3	Contains Lead, Lead Free	-	10.668mm	-	-	175u00b0C	1 (Unlimited)	Surface Mount	Surface Mount	4 V	1	1	3	2	ENHANCEMENT MODE	-55u00b0C~175u00b0C TJ	-	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	-	260	150W	150W Tc	2004	72A	No	150m u03a9 @ 11A, 10V	No SVHC	251 ns	150mOhm	19ns	ROHS3 Compliant	-	HEXFETu00ae	Matte Tin (Sn) - with Nickel (Ni) barrier	GULL WING	-	SMD/SMT	4V	30	SWITCHING	SILICON	23 ns	10 ns	u00b120V	4V @ 250u03bcA	-	200V	-	9.65mm
IRF7201TRPBF Infineon Technologies	4	-	-	ULTRA LOW RESISTANCE	70 mJ	-	-	7A	-	7.3A Tc	7.3A	-	30V	-	-	4.5V 10V	30V	EAR99	Single	12 Weeks	19 ns	N-Channel	-	28nC @ 10V	20V	1.4986mm	550pF @ 25V	-	-	e3	Contains Lead, Lead Free	-	4.9784mm	-	-	-	1 (Unlimited)	Surface Mount	Surface Mount	1 V	1	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	-	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	-	-	2.5W	2.5W Tc	2003	-	No	30m u03a9 @ 7.3A, 10V	No SVHC	73 ns	30mOhm	35ns	ROHS3 Compliant	-	HEXFETu00ae	Matte Tin (Sn)	GULL WING	DUAL	-	1V	-	SWITCHING	SILICON	21 ns	7 ns	u00b120V	1V @ 250u03bcA	-	30V	-	3.9878mm
IRF7404TRPBF Infineon Technologies	2	-	-	LOGIC LEVEL COMPATIBLE	-	-	Tin	-6.7A	-	6.7A Ta	-6.7A	5.3A	-20V	20V	-	2.7V 4.5V	-20V	EAR99	Single	12 Weeks	65 ns	P-Channel	-	50nC @ 4.5V	12V	1.4986mm	1500pF @ 15V	-	-	e3	Lead Free	-	4.9784mm	-	-	-	1 (Unlimited)	Surface Mount	Surface Mount	-700 mV	1	-	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	-	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	-	260	2.5W	2.5W Ta	2004	-	No	40m u03a9 @ 3.2A, 4.5V	No SVHC	100 ns	40mOhm	32ns	ROHS3 Compliant	6.3 mm	HEXFETu00ae	-	GULL WING	DUAL	-	-700mV	30	-	SILICON	100 ns	14 ns	u00b112V	700mV @ 250u03bcA	-	-20V	-	3.9878mm
IRF7424TRPBF Infineon Technologies	4000	-	-	-	-	-	Tin	-11A	-	11A Ta	-11A	-	-30V	30V	-	4.5V 10V	-30V	EAR99	Single	12 Weeks	76 ns	P-Channel	-1.2V	110nC @ 10V	20V	1.75mm	4030pF @ 25V	-	-	-	Lead Free	-	4.9784mm	-	-	150u00b0C	1 (Unlimited)	Surface Mount	Surface Mount	-2.5 V	1	1	8	-	-	-55u00b0C~150u00b0C TJ	-	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	-	-	2.5W	2.5W Ta	2004	-	No	13.5m u03a9 @ 11A, 10V	No SVHC	60 ns	13.5MOhm	23ns	ROHS3 Compliant	6.3 mm	HEXFETu00ae	-	-	-	SMD/SMT	-2.5V	-	-	SILICON	150 ns	15 ns	u00b120V	2.5V @ 250u03bcA	-	-30V	-	4.05mm
IRF7425TRPBF Infineon Technologies	-	-	-	-	-	-	Tin	-15A	-	15A Ta	-15A	-	-20V	-	-	2.5V 4.5V	20V	EAR99	Single	12 Weeks	160 ns	P-Channel	-	130nC @ 4.5V	12V	1.75mm	7980pF @ 15V	-	-	e3	Contains Lead	-	4.9784mm	-	-	150u00b0C	1 (Unlimited)	Surface Mount	Surface Mount	1.2 V	1	1	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	-	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	-	260	2.5W	2.5W Ta	2006	60A	No	8.2m u03a9 @ 15A, 4.5V	No SVHC	180 ns	8.2MOhm	20ns	ROHS3 Compliant	-	HEXFETu00ae	-	GULL WING	DUAL	SMD/SMT	-1.2V	30	SWITCHING	SILICON	230 ns	13 ns	u00b112V	1.2V @ 250u03bcA	-	-20V	-	3.9878mm
IRF7842TRPBF Infineon Technologies	1	-	-	-	-	-	Tin	18A	-	18A Ta	18A	-	40V	-	-	4.5V 10V	40V	EAR99	Single	12 Weeks	5 ns	N-Channel	-	50nC @ 4.5V	20V	1.75mm	4500pF @ 20V	-	-	-	Contains Lead, Lead Free	-	4.9784mm	-	-	150u00b0C	1 (Unlimited)	Surface Mount	Surface Mount	2.25 V	1	1	8	8	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	2.5A	8-SOIC (0.154, 3.90mm Width)	Tape & Reel (TR)	Active	-	-	2.5W	2.5W Ta	2004	-	No	5m u03a9 @ 17A, 10V	No SVHC	150 ns	5MOhm	12ns	ROHS3 Compliant	-	HEXFETu00ae	-	GULL WING	DUAL	SMD/SMT	2.25V	-	SWITCHING	SILICON	21 ns	14 ns	u00b120V	2.25V @ 250u03bcA	-	40V	-	3.9878mm
IRF9530NPBF Infineon Technologies	1020	-	-	AVALANCHE RATED, HIGH RELIABILITY	250 mJ	DRAIN	Tin	-14A	-	14A Tc	-14A	-	-100V	100V	-	10V	-100V	EAR99	Single	12 Weeks	46 ns	P-Channel	-	58nC @ 10V	20V	15.24mm	760pF @ 25V	TO-220AB	-	e3	Lead Free	2.54mm	10.5156mm	-	-	-	1 (Unlimited)	Through Hole	Through Hole	-4 V	1	-	3	3	ENHANCEMENT MODE	-55u00b0C~175u00b0C TJ	-	TO-220-3	Tube	Active	-	250	79W	79W Tc	1998	56A	No	200m u03a9 @ 8.4A, 10V	No SVHC	190 ns	200mOhm	58ns	ROHS3 Compliant	-	HEXFETu00ae	-	-	-	Through Hole	-4V	30	SWITCHING	SILICON	45 ns	15 ns	u00b120V	4V @ 250u03bcA	-	-100V	-	4.69mm
IRF9530NSTRLPBF Infineon Technologies	-	-	-	AVALANCHE RATED, HIGH RELIABILITY	250 mJ	DRAIN	Tin	-14A	-	14A Tc	-14A	-	-100V	-	-	10V	100V	EAR99	Single	12 Weeks	46 ns	P-Channel	-	58nC @ 10V	20V	5.084mm	760pF @ 25V	-	R-PSSO-G2	e3	Contains Lead, Lead Free	-	10.668mm	-	-	175u00b0C	1 (Unlimited)	Surface Mount	Surface Mount	-4 V	1	1	3	2	ENHANCEMENT MODE	-55u00b0C~175u00b0C TJ	-	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	-	260	3.8W	3.8W Ta 79W Tc	1998	56A	No	200m u03a9 @ 8.4A, 10V	No SVHC	190 ns	200mOhm	58ns	ROHS3 Compliant	-	HEXFETu00ae	-	GULL WING	-	-	-4V	30	SWITCHING	SILICON	45 ns	15 ns	u00b120V	4V @ 250u03bcA	-	-100V	-	9.65mm
IRF9540NSTRLPBF Infineon Technologies	100000	-	-	AVALANCHE RATED, HIGH RELIABILITY	84 mJ	DRAIN	Tin	-23A	23A	23A Tc	-23A	-	-100V	-	-	10V	100V	EAR99	Single	12 Weeks	51 ns	P-Channel	-	110nC @ 10V	20V	5.084mm	1450pF @ 25V	-	R-PSSO-G2	e3	Contains Lead	-	10.668mm	-	-	150u00b0C	1 (Unlimited)	Surface Mount	Surface Mount	-4 V	1	1	3	2	ENHANCEMENT MODE	-55u00b0C~150u00b0C TJ	-	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	-	260	3.8W	3.1W Ta 110W Tc	2003	-	No	117m u03a9 @ 14A, 10V	No SVHC	210 ns	117mOhm	67ns	ROHS3 Compliant	-	HEXFETu00ae	-	GULL WING	-	SMD/SMT	-4V	30	SWITCHING	SILICON	40 ns	13 ns	u00b120V	4V @ 250u03bcA	100V	-100V	-	9.65mm
IRF9Z34NSTRLPBF Infineon Technologies	800	-	-	AVALANCHE RATED, HIGH RELIABILITY	-	DRAIN	-	-19A	-	19A Tc	-19A	-	-55V	-	-	10V	55V	EAR99	Single	12 Weeks	41 ns	P-Channel	-	35nC @ 10V	20V	4.83mm	620pF @ 25V	-	R-PSSO-G2	e3	Contains Lead, Lead Free	-	10.668mm	-	-	175u00b0C	1 (Unlimited)	Surface Mount	Surface Mount	-4 V	1	1	3	2	ENHANCEMENT MODE	-55u00b0C~175u00b0C TJ	-	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	-	260	68W	3.8W Ta 68W Tc	1997	68A	No	100m u03a9 @ 10A, 10V	No SVHC	82 ns	100mOhm	55ns	ROHS3 Compliant	-	HEXFETu00ae	Matte Tin (Sn) - with Nickel (Ni) barrier	GULL WING	-	-	-2V	30	SWITCHING	SILICON	30 ns	13 ns	u00b120V	4V @ 250u03bcA	-	-55V	-	9.65mm
IRFB4110PBF Infineon Technologies	7500	-	-	-	-	DRAIN	Tin	180A	-	120A Tc	180A	-	100V	-	0.0045Ohm	10V	100V	EAR99	Single	12 Weeks	88 ns	N-Channel	-	210nC @ 10V	20V	16.51mm	9620pF @ 50V	TO-220AB	-	-	Lead Free	-	10.66mm	-	-	-	1 (Unlimited)	Through Hole	Through Hole	4 V	1	-	3	3	ENHANCEMENT MODE	-55u00b0C~175u00b0C TJ	-	TO-220-3	Tube	Active	-	-	370W	370W Tc	2008	670A	No	4.5m u03a9 @ 75A, 10V	No SVHC	75 ns	-	67ns	ROHS3 Compliant	-	HEXFETu00ae	-	-	-	Through Hole	4V	-	SWITCHING	SILICON	78 ns	25 ns	u00b120V	4V @ 250u03bcA	-	100V	-	4.826mm
IRFB4227PBF Infineon Technologies	5000	-	-	-	-	DRAIN	-	65A	-	65A Tc	-	-	200V	-	-	10V	200V	EAR99	Single	12 Weeks	31 ns	N-Channel	-	98nC @ 10V	30V	19.8mm	4600pF @ 25V	TO-220AB	-	-	Lead Free	-	10.6426mm	-	-	175u00b0C	1 (Unlimited)	Through Hole	Through Hole	5 V	1	1	3	3	ENHANCEMENT MODE	-40u00b0C~175u00b0C TJ	-	TO-220-3	Tube	Active	-	-	330W	330W Tc	2004	260A	No	24m u03a9 @ 46A, 10V	No SVHC	150 ns	24MOhm	20ns	ROHS3 Compliant	-	HEXFETu00ae	-	-	-	Through Hole	5V	-	SWITCHING	SILICON	21 ns	33 ns	u00b130V	5V @ 250u03bcA	-	-	-	4.82mm

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