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Rohm Semiconductor RUM002N02T2L

Rohm Semiconductor

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RUM002N02T2L

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Rohm Semiconductor

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MOSFET N-CH 20V 0.2A VMT3

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Rohm Semiconductor RUM002N02T2L technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor RUM002N02T2L.

Parameter	Value
Factory Lead Time	16 Weeks
Contact Plating	Copper, Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-723
Number of Pins	3
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25u2103	200mA Ta
Drive Voltage (Max Rds On, Min Rds On)	1.2V 2.5V
Number of Elements	1
Power Dissipation (Max)	150mW Ta
Turn Off Delay Time	15 ns
Operating Temperature	150u00b0C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Copper (Sn/Cu)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	10
Pin Count	3
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150mW
Turn On Delay Time	5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.2 u03a9 @ 200mA, 2.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	25pF @ 10V
Rise Time	10ns
Vgs (Max)	u00b18V
Fall Time (Typ)	10 ns
Continuous Drain Current (ID)	200mA
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	0.2A
Drain-source On Resistance-Max	1.4Ohm
Drain to Source Breakdown Voltage	20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free