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Microchip Technology APTGT50X60T3G
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Microchip Technology APTGT50X60T3G

Microchip Technology

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APTGT50X60T3G

Manufacturer:

Microchip Technology

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IGBT Modules CC3053View in Development Tools Selector

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Microchip Technology APTGT50X60T3G information

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Microchip Technology APTGT50X60T3G technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology APTGT50X60T3G.
ParameterValue
Mounting Type Chassis Mount
Package / Case SP-3
Surface Mount NO
Supplier Device Package SP3
Number of Terminals 25
Transistor Element Material SILICON
Base Product Number APTGT50
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 1.5 V
Continuous Collector Current at 25 C 80 A
Current-Collector (Ic) (Max) 80 A
Factory Pack QuantityFactory Pack Quantity 1
Gate-Emitter Leakage Current 600 nA
Ihs Manufacturer MICROSEMI CORP
Manufacturer Part Number APTGT50X60T3G
Maximum Gate Emitter Voltage 20 V
Maximum Operating Temperature + 175 C
Mfr Microchip Technology
Minimum Operating Temperature - 40 C
Moisture Sensitivity Levels 1
Mounting Styles Chassis Mount
Number of Elements 6
Operating Temperature-Max 175 u00b0C
Package Bulk
Package Body Material UNSPECIFIED
Package Description FLANGE MOUNT, R-XUFM-X25
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Part Life Cycle Code Active
Pd - Power Dissipation 176 W
Product Status Active
Reflow Temperature-Max (s) NOT SPECIFIED
Risk Rank 5.71
RoHS Details
Rohs Code Yes
Turn-off Time-Nom (toff) 310 ns
Turn-on Time-Nom (ton) 170 ns
Unit Weight 7.863095 oz
Operating Temperature -40u00b0C ~ 175u00b0C (TJ)
Packaging Tube
Series -
JESD-609 Code e1
Pbfree Code Yes
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count 25
JESD-30 Code R-XUFM-X25
Qualification Status Not Qualified
Configuration 3-Phase Inverter
Power Dissipation 176
Case Connection ISOLATED
Power - Max 176 W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Operating Temperature Range - 40 C to + 175 C
Current - Collector Cutoff (Max) 250 u00b5A
Voltage - Collector Emitter Breakdown (Max) 600 V
Power Dissipation-Max (Abs) 176 W
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
Collector Current-Max (IC) 80 A
Continuous Collector Current 80
IGBT Type Trench Field Stop
Collector-Emitter Voltage-Max 600 V
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20 V
Input Capacitance (Cies) @ Vce 3.15 nF @ 25 V
VCEsat-Max 1.9 V
Product IGBT Silicon Modules
Height 11.5 mm
Length 73.4 mm
Width 40.8 mm

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