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Microchip Technology APTGT300H60G
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Microchip Technology APTGT300H60G

Microchip Technology

Manufacturer No:

APTGT300H60G

Manufacturer:

Microchip Technology

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IGBT Modules CC6107View in Development Tools Selector

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Microchip Technology APTGT300H60G information

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Microchip Technology APTGT300H60G technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology APTGT300H60G.
ParameterValue
Lifecycle Status Production (Last Updated: 2 months ago)
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP6
Surface Mount NO
Number of Pins 12
Supplier Device Package SP6
Number of Terminals 12
Transistor Element Material SILICON
Base Product Number APTGT300
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Breakdown Voltage 600 V
Collector-Emitter Saturation Voltage 1.4 V
Continuous Collector Current at 25 C 430 A
Current-Collector (Ic) (Max) 430 A
Factory Pack QuantityFactory Pack Quantity 1
Gate-Emitter Leakage Current 500 nA
Ihs Manufacturer MICROSEMI CORP
Manufacturer Part Number APTGT300H60G
Maximum Gate Emitter Voltage 20 V
Maximum Operating Temperature + 100 C
Mfr Microchip Technology
Minimum Operating Temperature - 40 C
Moisture Sensitivity Levels 1
Mounting Styles Chassis Mount
Number of Elements 4
Operating Temperature-Max 175 u00b0C
Package Bulk
Package Body Material UNSPECIFIED
Package Description FLANGE MOUNT, R-XUFM-X12
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Part Life Cycle Code Active
Pd - Power Dissipation 1.15 kW
Product Status Active
Reflow Temperature-Max (s) NOT SPECIFIED
Risk Rank 5.19
RoHS Details
Rohs Code Yes
Schedule B 8541290080, 8541500080/8541500080/8541500080/8541500080/8541500080
Turn-off Time-Nom (toff) 320 ns
Turn-on Time-Nom (ton) 170 ns
Unit Weight 3.880136 oz
Operating Temperature -40u00b0C ~ 175u00b0C (TJ)
Packaging Tube
Series -
JESD-609 Code e1
Pbfree Code Yes
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Operating Temperature 175 u00b0C
Min Operating Temperature -40 u00b0C
Additional Feature AVALANCHE RATED
Max Power Dissipation 1.15 kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count 12
JESD-30 Code R-XUFM-X12
Qualification Status Not Qualified
Configuration Full Bridge
Power Dissipation 1.15
Case Connection ISOLATED
Power - Max 1150 W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600 V
Max Collector Current 430 A
Current - Collector Cutoff (Max) 350 u00b5A
Voltage - Collector Emitter Breakdown (Max) 600 V
Input Capacitance 24 nF
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 300A
Collector Current-Max (IC) 430 A
Continuous Collector Current 430
IGBT Type Trench Field Stop
Collector-Emitter Voltage-Max 600 V
NTC Thermistor No
Input Capacitance (Cies) @ Vce 24 nF @ 25 V
Product IGBT Silicon Modules
Radiation Hardening No

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