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STMicroelectronics STC08IE120HV
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STMicroelectronics STC08IE120HV

STMicroelectronics

Manufacturer No:

STC08IE120HV

Manufacturer:

STMicroelectronics

Cybertant No:

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Package:

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Datasheet:

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ECAD Model:

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Description:

Gate Drivers Swtch Bi Transistr ESBT 1200 V

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time. transport
  • Prepare productStep1:Prepare product
  • Vacuum packagingStep2:Vacuum packaging
  • Anti-static bagStep3:Anti-static bag
  • Individual packageStep4:Individual package
  • Packaging boxStep5:Packaging box
  • Barcode shipping labelStep6:Barcode shipping label
STMicroelectronics STC08IE120HV information

Specifications
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STMicroelectronics STC08IE120HV technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STC08IE120HV.
ParameterValue
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-4
Number of Pins 4
Number of Elements 1
Voltage Rated 1200V 1.2kV
Packaging Tube
Series ESBTu00ae
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150u00b0C
Min Operating Temperature -40u00b0C
Applications Gate Driver
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 8A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STC08I
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN FET AND DIODE
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Emitter Switched Bipolar
Power Dissipation-Max (Abs) 208W
Collector Current-Max (IC) 8A
DC Current Gain-Min (hFE) 5
Collector-Emitter Voltage-Max 1200V
Height 20.15mm
Length 15.75mm
Width 5.15mm
RoHS Status ROHS3 Compliant

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