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ON Semiconductor SMUN5313DW1T1G
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ON Semiconductor SMUN5313DW1T1G

ON Semiconductor

Manufacturer No:

SMUN5313DW1T1G

Manufacturer:

ON Semiconductor

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Description:

Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R

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ON Semiconductor SMUN5313DW1T1G information

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ON Semiconductor SMUN5313DW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SMUN5313DW1T1G.
ParameterValue
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 hours ago)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Weight 7.512624mg
Collector-Emitter Breakdown Voltage 50V
hFEMin 80
Number of Elements 2
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150u00b0C
Min Operating Temperature -55u00b0C
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation 187mW
Terminal Form GULL WING
Base Part Number MUN53**DW1
Pin Count 6
Reference Standard AEC-Q101
Polarity NPN, PNP
Number of Channels 2
Element Configuration Dual
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300u03bcA, 10mA
Max Breakdown Voltage 50V
Resistor - Base (R1) 47k u03a9
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k u03a9
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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