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ON Semiconductor NSBC114EDXV6T1G
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ON Semiconductor NSBC114EDXV6T1G

ON Semiconductor

Manufacturer No:

NSBC114EDXV6T1G

Manufacturer:

ON Semiconductor

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Description:

Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-563 T/R

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In Stock : 365

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ON Semiconductor NSBC114EDXV6T1G information

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ON Semiconductor NSBC114EDXV6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBC114EDXV6T1G.
ParameterValue
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 15 hours ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Collector-Emitter Breakdown Voltage 50V
hFEMin 35
Number of Elements 2
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Operating Temperature 150u00b0C
Min Operating Temperature -55u00b0C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Voltage - Rated DC 50V
Max Power Dissipation 500mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NSBC1*
Pin Count 6
Polarity NPN
Element Configuration Dual
Power Dissipation 357mW
Transistor Application SWITCHING
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300u03bcA, 10mA
Max Breakdown Voltage 50V
Resistor - Base (R1) 10k u03a9
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 10k u03a9
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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