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ON Semiconductor NDS355AN

ON Semiconductor

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NDS355AN

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ON Semiconductor

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Trans MOSFET N-CH 30V 1.7A 3-Pin SuperSOT T/R

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ON Semiconductor NDS355AN technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NDS355AN.

Parameter	Value
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	30mg
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25u2103	1.7A Ta
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Elements	1
Power Dissipation (Max)	500mW Ta
Turn Off Delay Time	13 ns
Operating Temperature	-55u00b0C~150u00b0C TJ
Packaging	Tape & Reel (TR)
Published	1998
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	85mOhm
Voltage - Rated DC	30V
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	1.7A
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Channels	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500mW
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	85m u03a9 @ 1.9A, 10V
Vgs(th) (Max) @ Id	2V @ 250u03bcA
Input Capacitance (Ciss) (Max) @ Vds	195pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	5nC @ 5V
Rise Time	32ns
Vgs (Max)	u00b120V
Fall Time (Typ)	32 ns
Continuous Drain Current (ID)	1.7A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Max Junction Temperature (Tj)	150u00b0C
Nominal Vgs	1.6 V
Height	1.22mm
Length	2.92mm
Width	3.05mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free