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ON Semiconductor MBT3946DW1T2G
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ON Semiconductor MBT3946DW1T2G

ON Semiconductor

Manufacturer No:

MBT3946DW1T2G

Manufacturer:

ON Semiconductor

Cybertant No:

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Description:

TRANS NPN/PNP 40V 0.2A SOT363

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In Stock : 1993

Minimum: 1 Multiples: 1

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ON Semiconductor MBT3946DW1T2G information

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ON Semiconductor MBT3946DW1T2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MBT3946DW1T2G.
ParameterValue
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 40V
Collector-Emitter Saturation Voltage 300mV
hFEMin 40
Number of Elements 2
Operating Temperature -55u00b0C~150u00b0C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Voltage - Rated DC 40V
Max Power Dissipation 150mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MBT3946D
Pin Count 6
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 150mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 300MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Frequency - Transition 300MHz 250MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Turn On Time-Max (ton) 70ns
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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