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ON Semiconductor MBRD660CTT4G
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ON Semiconductor MBRD660CTT4G

ON Semiconductor

Manufacturer No:

MBRD660CTT4G

Manufacturer:

ON Semiconductor

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Description:

ON Semi MBRD660CTT4G; Dual SMT Schottky Diode; Common Cathode; 60V 6A; 3-Pin D-PAK

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ON Semiconductor MBRD660CTT4G information

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ON Semiconductor MBRD660CTT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MBRD660CTT4G.
ParameterValue
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 13 hours ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Diode Element Material SILICON
Number of Elements 2
Packaging Cut Tape (CT)
Published 2011
Series SWITCHMODEu2122
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 175u00b0C
Min Operating Temperature -65u00b0C
Applications FAST RECOVERY POWER
Additional Feature FREE WHEELING DIODE
HTS Code 8541.10.00.80
Voltage - Rated DC 60V
Terminal Position SINGLE
Terminal Form GULL WING
Current Rating 6A
Base Part Number MBRD660CT
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 100u03bcA @ 60V
Voltage - Forward (Vf) (Max) @ If 700mV @ 3A
Forward Current 6A
Max Reverse Leakage Current 100u03bcA
Operating Temperature - Junction -65u00b0C~175u00b0C
Max Surge Current 75A
Output Current-Max 3A
Halogen Free Halogen Free
Forward Voltage 900mV
Max Reverse Voltage (DC) 60V
Average Rectified Current 3A
Number of Phases 1
Peak Reverse Current 100u03bcA
Max Repetitive Reverse Voltage (Vrrm) 60V
Peak Non-Repetitive Surge Current 75A
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 75A
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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