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ON Semiconductor MB8S

ON Semiconductor

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MB8S

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ON Semiconductor

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DIODE BRIDGE 0.5A 800V 4-SOIC

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FedEx International, 5-7 business days.

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ON Semiconductor MB8S technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MB8S.

Parameter	Value
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-269AA, 4-BESOP
Number of Pins	4
Supplier Device Package	4-SOIC
Weight	228mg
Number of Elements	1
Voltage Rated	50V
Operating Temperature	-55u00b0C~150u00b0C TJ
Packaging	Tape & Reel (TR)
Published	2014
Tolerance	5%
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150u00b0C
Min Operating Temperature	-55u00b0C
Capacitance	13pF
Voltage - Rated DC	800V
Max Power Dissipation	1.4W
Current Rating	500mA
Base Part Number	MB8
Case Code (Metric)	1608
Case Code (Imperial)	0603
Element Configuration	Single
Diode Type	Single Phase
Current - Reverse Leakage @ Vr	5u03bcA @ 800V
Output Current	500mA
Voltage - Forward (Vf) (Max) @ If	1V @ 500mA
Forward Current	500mA
Max Surge Current	35A
Current - Average Rectified (Io)	500mA
Forward Voltage	1V
Average Rectified Current	500mA
Peak Reverse Current	5u03bcA
Max Repetitive Reverse Voltage (Vrrm)	800V
Peak Non-Repetitive Surge Current	35A
Reverse Voltage	800V
Max Forward Surge Current (Ifsm)	35A
Voltage - Peak Reverse (Max)	800V
Max Junction Temperature (Tj)	150u00b0C
Reverse Voltage (DC)	560V
Height	2.9mm
Length	1.6002mm
Width	4.2mm
Thickness	508u03bcm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free
Ratings	AEC-Q200