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Infineon Technologies IRLL2705TRPBF

Infineon Technologies

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IRLL2705TRPBF

Manufacturer:

Infineon Technologies

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MOSFET N-CH 55V 3.8A SOT223

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Infineon Technologies IRLL2705TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLL2705TRPBF.

Parameter	Value
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	3
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25u2103	3.8A Ta
Drive Voltage (Max Rds On, Min Rds On)	4V 10V
Number of Elements	1
Power Dissipation (Max)	1W Ta
Turn Off Delay Time	35 ns
Operating Temperature	-55u00b0C~150u00b0C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	HEXFETu00ae
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	40mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Voltage - Rated DC	55V
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	3.8A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G4
Number of Channels	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.1W
Case Connection	DRAIN
Turn On Delay Time	6.2 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	40m u03a9 @ 3.8A, 10V
Vgs(th) (Max) @ Id	2V @ 250u03bcA
Input Capacitance (Ciss) (Max) @ Vds	870pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	12ns
Vgs (Max)	u00b116V
Fall Time (Typ)	22 ns
Continuous Drain Current (ID)	3.8A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	5.2A
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Recovery Time	88 ns
Max Junction Temperature (Tj)	150u00b0C
Nominal Vgs	2 V
Height	1.8mm
Length	6.6802mm
Width	6.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free