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Infineon Technologies IRFR1205TRPBF

Infineon Technologies

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IRFR1205TRPBF

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Infineon Technologies

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MOSFET N-CH 55V 44A DPAK

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Infineon Technologies IRFR1205TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR1205TRPBF.

Parameter	Value
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25u2103	44A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	107W Tc
Turn Off Delay Time	47 ns
Operating Temperature	-55u00b0C~175u00b0C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFETu00ae
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	27mOhm
Additional Feature	AVALANCHE RATED, ULTRA LOW RESISTANCE
Voltage - Rated DC	55V
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	37A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	69W
Case Connection	DRAIN
Turn On Delay Time	7.3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m u03a9 @ 26A, 10V
Vgs(th) (Max) @ Id	4V @ 250u03bcA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Rise Time	69ns
Vgs (Max)	u00b120V
Fall Time (Typ)	60 ns
Continuous Drain Current (ID)	37A
Threshold Voltage	4V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	20A
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Recovery Time	98 ns
Nominal Vgs	4 V
Height	2.3876mm
Length	6.7056mm
Width	6.8mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free