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Infineon Technologies IRF7307TRPBF
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Infineon Technologies IRF7307TRPBF

Infineon Technologies

Manufacturer No:

IRF7307TRPBF

Manufacturer:

Infineon Technologies

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Description:

MOSFET N/P-CH 20V 8-SOIC

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Infineon Technologies IRF7307TRPBF information

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Infineon Technologies IRF7307TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7307TRPBF.
ParameterValue
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25u2103 5.2A 4.3A
Number of Elements 2
Turn Off Delay Time 51 ns
Operating Temperature -55u00b0C~150u00b0C TJ
Packaging Tape & Reel (TR)
Published 1997
Series HEXFETu00ae
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 50mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 5.2A
Base Part Number IRF7307PBF
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m u03a9 @ 2.6A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250u03bcA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time 26ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 33 ns
Continuous Drain Current (ID) 5.2A
Threshold Voltage 700mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 700 mV
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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