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Infineon Technologies IPG20N06S4L26ATMA1
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Infineon Technologies IPG20N06S4L26ATMA1

Infineon Technologies

Manufacturer No:

IPG20N06S4L26ATMA1

Manufacturer:

Infineon Technologies

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Description:

Trans MOSFET N-CH 60V 20A 8-Pin TDSON EP

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Infineon Technologies IPG20N06S4L26ATMA1 information

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Infineon Technologies IPG20N06S4L26ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPG20N06S4L26ATMA1.
ParameterValue
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Number of Elements 2
Turn Off Delay Time 18 ns
Operating Temperature -55u00b0C~175u00b0C TJ
Packaging Cut Tape (CT)
Published 2010
Series OptiMOSu2122
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 33W
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5 ns
Power - Max 33W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 26m u03a9 @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 10u03bcA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1430pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 1.5ns
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.026Ohm
Avalanche Energy Rating (Eas) 35 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

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