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ON Semiconductor FDS9958
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ON Semiconductor FDS9958

ON Semiconductor

Manufacturer No:

FDS9958

Manufacturer:

ON Semiconductor

Cybertant No:

-

Package:

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Description:

Trans MOSFET P-CH 60V 2.9A 8-Pin SOIC N T/R

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In Stock : 494220

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ON Semiconductor FDS9958 information

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ON Semiconductor FDS9958 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor FDS9958.
ParameterValue
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 hours ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 187mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25u2103 2.9A
Number of Elements 2
Turn Off Delay Time 27 ns
Operating Temperature -55u00b0C~150u00b0C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrenchu00ae
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 105MOhm
Max Power Dissipation 900mW
Terminal Form GULL WING
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 6 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 105m u03a9 @ 2.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250u03bcA
Input Capacitance (Ciss) (Max) @ Vds 1020pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 3ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 6 ns
Continuous Drain Current (ID) -2.9A
Threshold Voltage -1.6V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 65 pF
Height 1.575mm
Length 4.9mm
Width 3.9mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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