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ON Semiconductor FDG6322C
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ON Semiconductor FDG6322C

ON Semiconductor

Manufacturer No:

FDG6322C

Manufacturer:

ON Semiconductor

Cybertant No:

-

Package:

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Datasheet:

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ECAD Model:

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Description:

Trans Mosfet N/p-ch 25V 0.22A/0.41A 6-PIN SC-70 T/r

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In Stock : 30

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ON Semiconductor FDG6322C information

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ON Semiconductor FDG6322C technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor FDG6322C.
ParameterValue
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 28mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25u2103 220mA 410mA
Number of Elements 2
Turn Off Delay Time 55 ns
Operating Temperature -55u00b0C~150u00b0C TJ
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 4Ohm
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Max Power Dissipation 300mW
Terminal Form GULL WING
Current Rating 220mA
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4 u03a9 @ 220mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250u03bcA
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V
Rise Time 8ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 220mA
Threshold Voltage 850mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 25V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 850 mV
Height 1mm
Length 2mm
Width 1.25mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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