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ON Semiconductor FDG6304P
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ON Semiconductor FDG6304P

ON Semiconductor

Manufacturer No:

FDG6304P

Manufacturer:

ON Semiconductor

Cybertant No:

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Package:

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Description:

MOSFET 2P-CH 25V 0.41A SC70-6

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ON Semiconductor FDG6304P information

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ON Semiconductor FDG6304P technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor FDG6304P.
ParameterValue
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 28mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25u2103 410mA
Number of Elements 2
Turn Off Delay Time 55 ns
Operating Temperature -55u00b0C~150u00b0C TJ
Packaging Tape & Reel (TR)
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 1.1Ohm
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC -25V
Max Power Dissipation 300mW
Terminal Form GULL WING
Current Rating -410mA
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 7 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.1 u03a9 @ 410mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250u03bcA
Input Capacitance (Ciss) (Max) @ Vds 62pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V
Rise Time 8ns
Drain to Source Voltage (Vdss) 25V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) -410mA
Threshold Voltage -820mV
Gate to Source Voltage (Vgs) -8V
Drain Current-Max (Abs) (ID) 0.41A
Drain to Source Breakdown Voltage -25V
Dual Supply Voltage -25V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -820 mV
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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