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Texas Instruments CSD25303W1015

Texas Instruments

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CSD25303W1015

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Texas Instruments

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MOSFET P-CH 20V 3A 6DSBGA

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Texas Instruments CSD25303W1015 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD25303W1015.

Parameter	Value
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-UFBGA, DSBGA
Number of Pins	6
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25u2103	3A Tc
Drive Voltage (Max Rds On, Min Rds On)	1.8V 4.5V
Number of Elements	1
Power Dissipation (Max)	1.5W Ta
Turn Off Delay Time	11.3 ns
Operating Temperature	-55u00b0C~150u00b0C TJ
Packaging	Tape & Reel (TR)
Series	NexFETu2122
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Position	BOTTOM
Terminal Form	BALL
Base Part Number	CSD25303
Pin Count	6
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Turn On Delay Time	3.9 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	58m u03a9 @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250u03bcA
Input Capacitance (Ciss) (Max) @ Vds	435pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	4.3nC @ 4.5V
Rise Time	8.6ns
Drain to Source Voltage (Vdss)	20V
Vgs (Max)	u00b18V
Fall Time (Typ)	7.8 ns
Continuous Drain Current (ID)	3A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	3A
Drain-source On Resistance-Max	0.092Ohm
Drain to Source Breakdown Voltage	-20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead