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Diodes Incorporated BSS8402DW-7-F
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Diodes Incorporated BSS8402DW-7-F

Diodes Incorporated

Manufacturer No:

BSS8402DW-7-F

Manufacturer:

Diodes Incorporated

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Description:

MOSFET N/P-CH 60V/50V SC70-6

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Diodes Incorporated BSS8402DW-7-F information

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Diodes Incorporated BSS8402DW-7-F technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS8402DW-7-F.
ParameterValue
Factory Lead Time 16 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 6.010099mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25u2103 115mA 130mA
Number of Elements 2
Turn Off Delay Time 18 ns
Operating Temperature -55u00b0C~150u00b0C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 10Ohm
Additional Feature HIGH RELIABILITY
Max Power Dissipation 200mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 115mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BSS8402DW
Pin Count 6
Qualification Status Not Qualified
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 200mW
Turn On Delay Time 10 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5 u03a9 @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250u03bcA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Drain to Source Voltage (Vdss) 60V 50V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 115mA
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.13A
Dual Supply Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 2.5 V
Feedback Cap-Max (Crss) 5 pF
Height 1mm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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