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Infineon Technologies BSL308PEH6327XTSA1
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Infineon Technologies BSL308PEH6327XTSA1

Infineon Technologies

Manufacturer No:

BSL308PEH6327XTSA1

Manufacturer:

Infineon Technologies

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Description:

MOSFET 2P-CH 30V 2A 6TSOP

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Infineon Technologies BSL308PEH6327XTSA1 information

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Infineon Technologies BSL308PEH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSL308PEH6327XTSA1.
ParameterValue
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Number of Elements 2
Turn Off Delay Time 15.3 ns
Operating Temperature -55u00b0C~150u00b0C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, OptiMOSu2122
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Max Power Dissipation 500mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 5.6 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 80m u03a9 @ 2A, 10V
Vgs(th) (Max) @ Id 1V @ 11u03bcA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Rise Time 7.7ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 2.8 ns
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -30V
Drain Current-Max (Abs) (ID) 2A
Drain-source On Resistance-Max 0.08Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 4.5V Drive
Feedback Cap-Max (Crss) 18 pF
Height 1mm
Length 2.9mm
Width 1.6mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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