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Infineon Technologies BSD223PH6327XTSA1
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Infineon Technologies BSD223PH6327XTSA1

Infineon Technologies

Manufacturer No:

BSD223PH6327XTSA1

Manufacturer:

Infineon Technologies

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Description:

MOSFET 2P-CH 20V 0.39A SOT363

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Infineon Technologies BSD223PH6327XTSA1 information

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Infineon Technologies BSD223PH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSD223PH6327XTSA1.
ParameterValue
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON
Number of Elements 2
Turn Off Delay Time 5.1 ns
Operating Temperature -55u00b0C~150u00b0C TJ
Packaging Tape & Reel (TR)
Published 2002
Series OptiMOSu2122
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature AVALANCHE RATED
HTS Code 8541.21.00.95
Voltage - Rated DC -20V
Max Power Dissipation 250mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -350mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BSD223
Reference Standard AEC-Q101
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 3.8 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 1.2 u03a9 @ 390mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1.5u03bcA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 56pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 0.62nC @ 4.5V
Rise Time 5ns
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 390mA
Gate to Source Voltage (Vgs) 12V
Max Dual Supply Voltage -20V
Drain Current-Max (Abs) (ID) 0.39A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 22 pF
Height 800u03bcm
Length 2mm
Width 1.25mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

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