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Rohm Semiconductor BR25G320FJ-3GE2

Rohm Semiconductor

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BR25G320FJ-3GE2

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Rohm Semiconductor

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SPI BUS EEPROM

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Rohm Semiconductor BR25G320FJ-3GE2 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor BR25G320FJ-3GE2.

Parameter	Value
Factory Lead Time	9 Weeks
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Memory Types	Non-Volatile
Operating Temperature	-40u00b0C~85u00b0C TA
Packaging	Cut Tape (CT)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Additional Feature	SEATED HT-CALCULATED
Voltage - Supply	1.6V~5.5V
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Number of Functions	1
Supply Voltage	1.8V
Terminal Pitch	1.27mm
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G8
Supply Voltage-Max (Vsup)	5.5V
Supply Voltage-Min (Vsup)	1.6V
Memory Size	32Kb 4K x 8
Operating Mode	SYNCHRONOUS
Clock Frequency	20MHz
Memory Format	EEPROM
Memory Interface	SPI
Organization	4KX8
Memory Width	8
Write Cycle Time - Word, Page	5ms
Memory Density	32768 bit
Parallel/Serial	SERIAL
Serial Bus Type	SPI
Write Cycle Time-Max (tWC)	5ms
Height Seated (Max)	1.65mm
Length	4.9mm
Width	3.9mm
RoHS Status	ROHS3 Compliant