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ON Semiconductor 2SC5551AE-TD-E
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ON Semiconductor 2SC5551AE-TD-E

ON Semiconductor

Manufacturer No:

2SC5551AE-TD-E

Manufacturer:

ON Semiconductor

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Description:

TRANS NPN BIPO HI FREQ PCP

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ON Semiconductor 2SC5551AE-TD-E information

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ON Semiconductor 2SC5551AE-TD-E technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2SC5551AE-TD-E.
ParameterValue
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 30V
Collector-Emitter Saturation Voltage 300mV
Number of Elements 1
Operating Temperature 150u00b0C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 1.3W
Terminal Form FLAT
Frequency 3.5GHz
Pin Count 3
Element Configuration Single
Power Dissipation 1.3W
Case Connection COLLECTOR
Gain Bandwidth Product 3.5 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 50mA 5V
Transition Frequency 3500MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 2V
Collector-Base Capacitance-Max 4pF
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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