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Vishay Semiconductor Opto Division TCST2103

Vishay Semiconductor Opto Division

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TCST2103

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Vishay Semiconductor Opto Division

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VISHAY - TCST2103 - SENSOR, OPTICAL, PHOTOTRANSISTOR O/P

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Step2：Vacuum packaging
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Step4：Individual package
Step5：Packaging box
Step6：Barcode shipping label

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Vishay Semiconductor Opto Division TCST2103 information

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Vishay Semiconductor Opto Division TCST2103 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Opto Division TCST2103.

Parameter	Value
Factory Lead Time	12 Weeks
Contact Plating	Silver
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	Slotted Module, 4-Lead Dual Row
Number of Pins	4
Collector-Emitter Breakdown Voltage	70V
Current-Collector (Ic) (Max)	4mA
Number of Elements	1
Operating Temperature	-55u00b0C~85u00b0C
Packaging	Tube
Published	2001
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Type	Unamplified
Max Operating Temperature	85u00b0C
Min Operating Temperature	-55u00b0C
Voltage - Rated DC	1.25V
Output Voltage	70V
Max Output Current	100mA
Number of Channels	1
Output Configuration	Phototransistor
Power Dissipation	250mW
Output Current	100mA
Output Power	100mW
Forward Current	60mA
Response Time	10u03bcs, 8u03bcs
Rise Time	10u03bcs
Forward Voltage	1.25V
Fall Time (Typ)	8 u03bcs
Collector Emitter Voltage (VCEO)	70V
Max Collector Current	100mA
Sensing Distance	3.1mm
Voltage - Collector Emitter Breakdown (Max)	70V
Reverse Breakdown Voltage	6V
Sensing Method	Through-Beam
Current - DC Forward (If) (Max)	60mA
Input Current	60mA
Reverse Voltage (DC)	6V
Current Transfer Ratio	20 %
Height	10.8mm
Length	24.5mm
Width	6.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free