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ON Semiconductor QRD1114

ON Semiconductor

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QRD1114

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ON Semiconductor

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QRD1114 Series 30 V 50 mA Phototransistor Reflective Object Sensor

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ON Semiconductor QRD1114 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor QRD1114.

Parameter	Value
Factory Lead Time	23 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 hours ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	Radial - 4 Leads
Number of Pins	4
Weight	0g
Collector-Emitter Breakdown Voltage	30V
Operating Temperature	-40u00b0C~85u00b0C
Packaging	Bulk
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Max Power Dissipation	100mW
Output Voltage	30V
Output Type	Phototransistor
Operating Supply Voltage	1.7V
Number of Channels	1
Termination Type	SOLDER
Power Dissipation	100mW
Forward Current	50mA
Response Time	10u03bcs, 50u03bcs
Output Current-Max	5mA
Rise Time	10u03bcs
Forward Voltage	1.7V
Fall Time (Typ)	50 u03bcs
Collector Emitter Voltage (VCEO)	30V
Max Collector Current	1mA
Sensing Distance	0.050 (1.27mm)
Reverse Breakdown Voltage	5V
Sensing Method	Reflective
Sensors/Transducers Type	LINEAR POSITION SENSOR,PHOTOELECTRIC,DIFFUSE
Input Current	20mA
Housing	PLASTIC
Reverse Voltage (DC)	5V
Height	4.65mm
Length	6.1mm
Width	4.39mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free